Calculated based on number of publications stored in Pure and citations from Scopus
1976 …2022

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  • 2021

    Nanostructured materials for high efficiency solar cells

    Micha, D. N., Jakomin, R., Kawabata, R. M. S., Pires, M. P., Ponce, F. A. & Souza, P. L., Jan 1 2021, Sustainable Material Solutions for Solar Energy Technologies: Processing Techniques and Applications. Elsevier, p. 201-227 27 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    1 Scopus citations
  • 2017

    Microstructure and polarization properties of III-nitride semiconductors

    Ponce, F., Jan 1 2017, Handbook of GaN Semiconductor Materials and Devices. CRC Press, p. 53-86 34 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

  • 2003

    Gallium-nitride-based devices on silicon

    Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., Bimberg, D., & 2 othersKohn, E. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1940-1949 10 p.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    13 Scopus citations
  • 1997

    Environment about indium in G 1-xIn xN from in Ga K-edge XAFS

    Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., 1997, Journal De Physique. IV : JP. 2 Part 2 ed. Vol. 7.

    Research output: Chapter in Book/Report/Conference proceedingChapter

  • Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS

    Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., Apr 1997, Journal De Physique. IV : JP. 2 ed. Editions de Physique, Vol. 7.

    Research output: Chapter in Book/Report/Conference proceedingChapter