• 11012 Citations
  • 49 h-Index
1976 …2021
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Research Output 1976 2019

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Chapter
2017

Microstructure and polarization properties of III-nitride semiconductors

Ponce, F., Jan 1 2017, Handbook of GaN Semiconductor Materials and Devices. CRC Press, p. 53-86 34 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Nitrides
nitrides
Polarization
Semiconductor materials
microstructure
2003
12 Citations (Scopus)

Gallium-nitride-based devices on silicon

Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., Bimberg, D. & 2 others, Kohn, E. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1940-1949 10 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

gallium nitrides
light emitting diodes
field effect transistors
silicon
output
1997

Environment about indium in G 1-xIn xN from in Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., 1997, Journal De Physique. IV : JP. 2 Part 2 ed. Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

indium
atoms
plotting
gallium
diodes

Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., Apr 1997, Journal De Physique. IV : JP. 2 ed. Editions de Physique, Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

indium
atoms
plotting
gallium
diodes