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1976 …2021
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Research Output 1976 2020

Article
16 Citations (Scopus)

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T. & Dupuis, R. D., Aug 1 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600699.

Research output: Contribution to journalArticle

Boron
wurtzite
boron
Metallorganic chemical vapor deposition
Phase structure
27 Citations (Scopus)

A comparison of Rutherford backscattering spectroscopy and X-ray diffraction to determine the composition of thick InGaN epilayers

Srinivasan, S., Liu, R., Bertram, F., Ponce, F., Tanaka, S., Omiya, H. & Nakagawa, Y., Nov 2001, In : Physica Status Solidi (B) Basic Research. 228, 1, p. 41-44 4 p.

Research output: Contribution to journalArticle

Epilayers
Rutherford backscattering spectroscopy
Lattice constants
lattice parameters
backscattering
3 Citations (Scopus)

AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route

Garcia, R., Srinivasan, S., Contreras, O. E., Thomas, A. C. & Ponce, F., Oct 1 2007, In : Journal of Crystal Growth. 308, 1, p. 198-203 6 p.

Research output: Contribution to journalArticle

Nanocrystalline powders
Gallium
Aluminum
Ammonia
gallium
19 Citations (Scopus)

Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

Wang, B., Bliss, D., Suscavage, M., Swider, S., Lancto, R., Lynch, C., Weyburne, D., Li, T. & Ponce, F., Mar 1 2011, In : Journal of Crystal Growth. 318, 1, p. 1030-1033 4 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
Hydrides
vapor phase epitaxy
hydrides
Seed
39 Citations (Scopus)

A New Combustion Synthesis Method for GaN: Eu3+ and Ga2O3:Eu3+ Luminescent Powders

Hirata, G. A., Ramos, F., Garcia, R., Bosze, E. J., Mckittrick, J., Contreras, O. & Ponce, F., Nov 2001, In : Physica Status Solidi (A) Applied Research. 188, 1, p. 179-182 4 p.

Research output: Contribution to journalArticle

combustion synthesis
Combustion synthesis
hydrazine
Powders
Hydrazine
6 Citations (Scopus)

Anisotropic diffusion and drift of photogenerated carriers near coreless dislocations in InGaN quantum well

Shi, L., Poweleit, C. D., Ponce, F., Menendez, J. & Chow, W. W., Jul 2 2001, In : Applied Physics Letters. 79, 1, p. 75-77 3 p.

Research output: Contribution to journalArticle

pinholes
quantum wells
photoluminescence
gradients
indium
10 Citations (Scopus)

Applications of electron microscopy in collaborative industrial research

Ross, F. M., Krishnan, K. M., Thangaraj, N., Farrow, R. F. C., Marks, R. F., Cebollada, A., Parkin, S. S. P., Toney, M. F., Huffman, M., Paz De Araujo, C. A., McMillan, L. D., Cuchiaro, J., Scott, M. C., Echer, C., Ponce, F., O'Keefe, M. A. & Nelson, E. G., May 1996, In : MRS Bulletin. 21, 5, p. 17-23 7 p.

Research output: Contribution to journalArticle

Semiconducting aluminum compounds
Strontium compounds
strontium compounds
Industrial research
ferroelectric materials
7 Citations (Scopus)

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Clinton, E. A., Vadiee, E., Fabien, C. A. M., Moseley, M. W., Gunning, B. P., Doolittle, W. A., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Oct 1 2017, In : Solid-State Electronics. 136, p. 3-11 9 p.

Research output: Contribution to journalArticle

Indium
Defect density
indium
Nitrogen
defects
105 Citations (Scopus)

Atomic arrangement at the AIN/Si (111) interface

Liu, R., Ponce, F., Dadgar, A. & Krost, A., Aug 4 2003, In : Applied Physics Letters. 83, 5, p. 860-862 3 p.

Research output: Contribution to journalArticle

electron microscopy
high resolution
10 Citations (Scopus)

Atomic arrangement at the AlN/Si(110) interface

Contreras, O. E., Ruiz-Zepeda, F., Dadgar, A., Krost, A. & Ponce, F., Jun 2008, In : Applied Physics Express. 1, 6, p. 611041-611043 3 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Lattice mismatch
Substrates
High resolution transmission electron microscopy
Model structures
70 Citations (Scopus)

Atomic arrangement at the AlN/SiC interface

Ponce, F., Van De Walle, C. G. & Northrup, J. E., Mar 15 1996, In : Physical Review B - Condensed Matter and Materials Physics. 53, 11, p. 7473-7478 6 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
image contrast
configurations
transmission electron microscopy
high resolution
29 Citations (Scopus)

Atomic arrangement at the AlN/ZrB2 interface

Liu, R., Bell, A., Ponce, F., Kamiyama, S., Amano, H. & Akasaki, I., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3182-3184 3 p.

Research output: Contribution to journalArticle

buffers
ternary alloys
vapor phase epitaxy
electron microscopy
boron
30 Citations (Scopus)

Atomic arrangement at the Au/p-GaN interface in low-resistance contacts

Omiya, H., Ponce, F., Marui, H., Tanaka, S. & Mukai, T., Dec 20 2004, In : Applied Physics Letters. 85, 25, p. 6143-6145 3 p.

Research output: Contribution to journalArticle

low resistance
transmission electron microscopy
platelets
annealing
high resolution
11 Citations (Scopus)

Atomic force nanolithography of InP for site control growth of InAs nanostructures

Fonseca-Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., 2007, In : Applied Physics Letters. 90, 1, 013117.

Research output: Contribution to journalArticle

nanoindentation
vapor phase epitaxy
nucleation
defects
geometry
36 Citations (Scopus)

Atomic motion on the surface of a cadmium telluride single crystal

Sinclair, R., Yamashita, T. & Ponce, F., 1981, In : Nature. 290, 5805, p. 386-388 3 p.

Research output: Contribution to journalArticle

cadmium tellurides
single crystals
photoelectronics
crystal lattices
clocks
10 Citations (Scopus)

Basal-plane slip in InGaNGaN heterostructures in the presence of threading dislocations

Mei, J., Liu, R., Ponce, F., Omiya, H. & Mukai, T., 2007, In : Applied Physics Letters. 90, 17, 171922.

Research output: Contribution to journalArticle

slip
mesas
indium
ledges
propagation
31 Citations (Scopus)

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

Liu, J. P., Limb, J. B., Ryou, J. H., Yoo, D., Horne, C. A., Dupuis, R. D., Wu, Z. H., Fischer, A. M., Ponce, F., Hanser, A. D., Liu, L., Preble, E. A. & Evans, K. R., 2008, In : Applied Physics Letters. 92, 1, 011123.

Research output: Contribution to journalArticle

light emitting diodes
low currents
crystal defects
electroluminescence
metalorganic chemical vapor deposition
48 Citations (Scopus)

Bright, crack-free InGaN/GaN light emitters on Si(111)

Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bläsing, J., Diez, A., Schulze, F., Riemann, T., Ponce, F. & Krost, A., Aug 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 308-313 6 p.

Research output: Contribution to journalArticle

interlayers
emitters
cracks
Cracks
output
5 Citations (Scopus)

Capacitance voltage characteristics and electron holography on cubic AlGaN/GaN heterojunctions

As, D. J., Zado, A., Wei, Q. Y., Li, T., Huang, J. Y. & Ponce, F., Aug 2013, In : Japanese Journal of Applied Physics. 52, 8 PART 2, 08JN04.

Research output: Contribution to journalArticle

Electron holography
capacitance-voltage characteristics
holography
Heterojunctions
heterojunctions
9 Citations (Scopus)

Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

Srinivasan, S., Stevens, M., Ponce, F., Omiya, H. & Mukai, T., 2006, In : Applied Physics Letters. 89, 23, 231908.

Research output: Contribution to journalArticle

quantum wells
electrostatics
carrier lifetime
geometry
cathodoluminescence
49 Citations (Scopus)

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Li, T., Fischer, A. M., Wei, Q. Y., Ponce, F., Detchprohm, T. & Wetzel, C., 2010, In : Applied Physics Letters. 96, 3, 031906.

Research output: Contribution to journalArticle

quantum efficiency
quantum wells
radiative recombination
cathodoluminescence
visible spectrum

CBED study of grain misorientations in AlGaN epilayers

Sahonta, S. L., Cherns, D., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Apr 2005, In : Ultramicroscopy. 103, 1, p. 23-32 10 p.

Research output: Contribution to journalArticle

Epilayers
misalignment
wings
Electron diffraction
Seed
4 Citations (Scopus)

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Swanson, D. E., Reich, C., Abbas, A., Shimpi, T., Liu, H., Ponce, F., Walls, J. M., Zhang, Y-H., Metzger, W. K., Sampath, W. S. & Holman, Z., May 28 2018, In : Journal of Applied Physics. 123, 20, 203101.

Research output: Contribution to journalArticle

photovoltaic cells
passivity
absorbers
grain boundaries
silicon
37 Citations (Scopus)

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Cherns, D., Young, W. T. & Ponce, F., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 76-81 6 p.

Research output: Contribution to journalArticle

Burgers vector
Aluminum Oxide
Sapphire
Electron diffraction
inversions
176 Citations (Scopus)

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

Ponce, F., Cherns, D., Young, W. T. & Steeds, J. W., Aug 5 1996, In : Applied Physics Letters. 69, 6, p. 770-772 3 p.

Research output: Contribution to journalArticle

electron microscopy
electron diffraction
diffraction
crystal defects
imaging techniques
19 Citations (Scopus)

Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers

Dai, J. N., Wu, Z. H., Yu, C. H., Zhang, Q., Sun, Y. Q., Xiong, Y. K., Han, X. Y., Tong, L. Z., He, Q. H., Ponce, F. & Chen, C. Q., Sep 2009, In : Journal of Electronic Materials. 38, 9, p. 1938-1943 6 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Buffer layers
Sapphire
metalorganic chemical vapor deposition
24 Citations (Scopus)

Compositional instability in InAlN/GaN lattice-matched epitaxy

Wei, Q. Y., Li, T., Huang, Y., Huang, J. Y., Chen, Z. T., Egawa, T. & Ponce, F., Feb 27 2012, In : Applied Physics Letters. 100, 9, 092101.

Research output: Contribution to journalArticle

V grooves
epitaxy
breakdown
screws
homogeneity
7 Citations (Scopus)

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. & Haigh, S. J., May 30 2014, In : Nanotechnology. 25, 21, 215705.

Research output: Contribution to journalArticle

Nanorods
Molecular beam epitaxy
Spinodal decomposition
Microanalysis
Platelets
27 Citations (Scopus)

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Gunning, B. P., Fabien, C. A. M., Merola, J. J., Clinton, E. A., Doolittle, W. A., Wang, S., Fischer, A. M. & Ponce, F., Jan 28 2015, In : Journal of Applied Physics. 117, 4, 045710.

Research output: Contribution to journalArticle

p-i-n diodes
electronics
conduction bands
light emitting diodes
luminescence
51 Citations (Scopus)

Control of quantum-confined Stark effect in InGaNGaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

Ryou, J. H., Lee, W., Limb, J., Yoo, D., Liu, J. P., Dupuis, R. D., Wu, Z. H., Fischer, A. M. & Ponce, F., 2008, In : Applied Physics Letters. 92, 10, 101113.

Research output: Contribution to journalArticle

Stark effect
nitrides
light emitting diodes
quantum wells
electrostatics
6 Citations (Scopus)

Correlated structural, electronic, and optical properties of AlN/GaN multiple quantum disks in GaN nanowires

Fischer, A. M., Sun, K. W., Ponce, F., Songmuang, R. & Monroy, E., Feb 2012, In : Applied Physics Express. 5, 2, 025001.

Research output: Contribution to journalArticle

Electron holography
Conduction bands
Electronic properties
Band structure
Nanowires
6 Citations (Scopus)

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

Xie, H., Prioli, R., Torelly, G., Liu, H., Fischer, A. M., Jakomin, R., Mourão, R., Kawabata, R., Pires, M. P., Souza, P. L. & Ponce, F., Apr 12 2017, In : Semiconductor Science and Technology. 32, 5, 055013.

Research output: Contribution to journalArticle

spools
Reels
distribution (property)
Electron energy levels
Semiconductor quantum dots
18 Citations (Scopus)

Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells

Brooksby, J. C., Mei, J. & Ponce, F., 2007, In : Applied Physics Letters. 90, 23, 231901.

Research output: Contribution to journalArticle

quantum wells
luminescence
microstructure
cathodoluminescence
sapphire
16 Citations (Scopus)

Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

Mazuelas, A., González, L., Ponce, F., Tapfer, L. & Briones, F., 1993, In : Journal of Crystal Growth. 131, 3-4, p. 465-469 5 p.

Research output: Contribution to journalArticle

Wave interference
Monolayers
Reflection high energy electron diffraction
Transmission electron microscopy
Dislocations (crystals)
8 Citations (Scopus)

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

Maros, A., Faleev, N., King, R., Honsberg, C., Convey, D., Xie, H. & Ponce, F., Mar 1 2016, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 34, 2, 02L113.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Heterojunctions
Strain relaxation
X rays
Epitaxial films
114 Citations (Scopus)

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

Ponce, F., Major, J. S., Plano, W. E. & Welch, D. F., 1994, In : Applied Physics Letters. 65, 18, p. 2302-2304 3 p.

Research output: Contribution to journalArticle

epitaxy
sapphire
buffers
crystal defects
metalorganic chemical vapor deposition
20 Citations (Scopus)
zinc selenides
metalorganic chemical vapor deposition
crystals
defects
grain boundaries
7 Citations (Scopus)

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

Wang, S., Li, X., Fischer, A. M., Detchprohm, T., Dupuis, R. D. & Ponce, F., Oct 1 2017, In : Journal of Crystal Growth. 475, p. 334-340 7 p.

Research output: Contribution to journalArticle

Boron
gas flow
Flow of gases
boron
Crystal structure
58 Citations (Scopus)

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Mahbub Satter, M., Shen, S. C., Douglas Yoder, P., Ryou, J. H., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Mar 11 2013, In : Applied Physics Letters. 102, 10, 101110.

Research output: Contribution to journalArticle

lasing
optical pumping
stimulated emission
excimer lasers
metalorganic chemical vapor deposition

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S. & Cherns, D., Sep 2004, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2679-2685 7 p.

Research output: Contribution to journalArticle

Ultraviolet radiation
Ultraviolet devices
emitters
Diodes
light emitting diodes
24 Citations (Scopus)

Defect formation near GaN surfaces and interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., Ponce, F., Yang, Y., Lapeyre, G. J., MacKenzie, J. D. & Abernathy, C. R., Dec 15 1999, In : Physica B: Condensed Matter. 273-274, p. 70-74 5 p.

Research output: Contribution to journalArticle

Defects
Heterojunctions
defects
Metals
Phase interfaces
2 Citations (Scopus)

Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

Thornton, R. L., Bour, D. P., Treat, D., Ponce, F., Tramontana, J. C. & Endicott, F. J., 1994, In : Applied Physics Letters. 65, 21, p. 2696-2698 3 p.

Research output: Contribution to journalArticle

retarding
impurities
defects
transmission electron microscopy
165 Citations (Scopus)

Defects and interfaces in GaN epitaxy

Ponce, F., Feb 1997, In : MRS Bulletin. 22, 2, p. 51-57 7 p.

Research output: Contribution to journalArticle

Epitaxial growth
Defects
403 Citations (Scopus)

Defects in single-crystal silicon induced by hydrogenation

Johnson, N. M. P., Ponce, F., Street, R. A. & Nemanich, R., 1987, In : Physical Review B. 35, 8, p. 4166-4169 4 p.

Research output: Contribution to journalArticle

Silicon
Hydrogenation
hydrogenation
Deep level transient spectroscopy
Photoluminescence spectroscopy
34 Citations (Scopus)

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Li, X. H., Kao, T. T., Satter, M. M., Wei, Y. O., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Fischer, A. M., Ponce, F., Detchprohm, T. & Dupuis, R. D., Jan 26 2015, In : Applied Physics Letters. 106, 4, 041115.

Research output: Contribution to journalArticle

ultraviolet emission
quantum well lasers
stimulated emission
sapphire
wavelengths
28 Citations (Scopus)
Semiconductor quantum wells
Luminescence
quantum wells
Spectroscopy
luminescence
42 Citations (Scopus)
Electron holography
Charge distribution
Charge density
holography
charge distribution

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Alugubelli, S. R., Fu, H., Fu, K., Liu, H., Zhao, Y., McCartney, M. R. & Ponce, F. A., Nov 11 2019, In : Applied Physics Letters. 115, 20, 201602.

Research output: Contribution to journalArticle

Open Access
p-i-n diodes
holography
profiles
electronics
electrons
228 Citations (Scopus)

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Ponce, F., Bour, D. P., Young, W. T., Saunders, M. & Steeds, J. W., Jul 15 1996, In : Applied Physics Letters. 69, 3, p. 337-339 3 p.

Research output: Contribution to journalArticle

flat surfaces
polarity
single crystals
sapphire
epitaxy
45 Citations (Scopus)

Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy

Cherns, D., Young, W. T., Saunders, M., Steeds, J. W., Ponce, F. & Nakamura, S., Jan 1998, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 77, 1, p. 273-286 14 p.

Research output: Contribution to journalArticle

Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
Electron diffraction