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Research Output 1976 2019

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2019

Dopant profiling in p-i-n GaN structures using secondary electrons

Alugubelli, S. R., Fu, H., Fu, K., Liu, H., Zhao, Y. & Ponce, F., Jul 7 2019, In : Journal of Applied Physics. 126, 1, 015704.

Research output: Contribution to journalArticle

Open Access
secondary emission
electron beams
electron emission
electrons
electric potential

Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga 0.5 In 0.5 P

Su, P. Y., Liu, H., Kawabata, R. M. S., Weiner, E. C., Jakomin, R., Pires, M. P., King, R., Souza, P. L. & Ponce, F., Feb 7 2019, In : Journal of Applied Physics. 125, 5, 053104.

Research output: Contribution to journalArticle

quantum dots
indium
cathodoluminescence
vapor phase epitaxy
insertion

Identification of point defects using high-resolution electron energy loss spectroscopy

Wang, S., March, K., Ponce, F. & Rez, P., Mar 18 2019, In : Physical Review B. 99, 11, 115312.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
Point defects
point defects
energy dissipation
electron energy

Implantation-and etching-free high voltage vertical GaN p-n diodes terminated by plasma-hydrogenated p-GaN: Revealing the role of thermal annealing

Fu, H., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Montes, J., Yang, T. H., Yang, C., Zhou, J., Ponce, F. & Zhao, Y., Jan 1 2019, In : Applied Physics Express. 12, 5, 051015.

Research output: Contribution to journalArticle

Open Access
Electric breakdown
electrical faults
high voltages
Etching
implantation
1 Citation (Scopus)

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Liu, H., Fu, H., Fu, K., Alugubelli, S. R., Su, P. Y., Zhao, Y. & Ponce, F., Feb 25 2019, In : Applied Physics Letters. 114, 8, 082102.

Research output: Contribution to journalArticle

Open Access
mesas
luminescence
electronics
crystals
1 Citation (Scopus)

Spatial imaging of charge transport in silicon at low temperature

Moffatt, R. A., Kurinsky, N. A., Stanford, C., Allen, J., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Ponce, F., Sundqvist, K., Yellin, S., Yen, J. J. & Young, B. A., Jan 21 2019, In : Applied Physics Letters. 114, 3, 032104.

Research output: Contribution to journalArticle

silicon
scattering
electric field strength
cryogenic temperature
low voltage
2018
3 Citations (Scopus)

CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells

Swanson, D. E., Reich, C., Abbas, A., Shimpi, T., Liu, H., Ponce, F., Walls, J. M., Zhang, Y-H., Metzger, W. K., Sampath, W. S. & Holman, Z., May 28 2018, In : Journal of Applied Physics. 123, 20, 203101.

Research output: Contribution to journalArticle

photovoltaic cells
passivity
absorbers
grain boundaries
silicon

Dislocation baskets in thick InxGa1-xN epilayers

Wang, S., Xie, H., Liu, H., Fischer, A. M., McFavilen, H. & Ponce, F., Sep 14 2018, In : Journal of Applied Physics. 124, 10, 105701.

Research output: Contribution to journalArticle

baskets
crystal defects
indium
symmetry
matrices
9 Citations (Scopus)

Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells

Weiner, E. C., Jakomin, R., Micha, D. N., Xie, H., Su, P. Y., Pinto, L. D., Pires, M. P., Ponce, F. & Souza, P. L., May 1 2018, In : Solar Energy Materials and Solar Cells. 178, p. 240-248 9 p.

Research output: Contribution to journalArticle

Semiconductor quantum dots
Solar cells
Optical properties
Annealing
Photoluminescence
3 Citations (Scopus)

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

Fu, K., Fu, H., Liu, H., Alugubelli, S. R., Yang, T. H., Huang, X., Chen, H., Baranowski, I., Montes, J., Ponce, F. & Zhao, Y., Dec 3 2018, In : Applied Physics Letters. 113, 23, 233502.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
diodes
current density
tunnel diodes
avalanche diodes
4 Citations (Scopus)

Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., May 15 2018, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

Superlattices
Surface emitting lasers
surface emitting lasers
superlattices
Tin oxides
4 Citations (Scopus)

Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Fu, H., Zhang, X., Fu, K., Liu, H., Alugubelli, S. R., Huang, X., Chen, H., Baranowski, I., Yang, T. H., Xu, K., Ponce, F., Zhang, B. & Zhao, Y., Nov 1 2018, In : Applied Physics Express. 11, 11, 111003.

Research output: Contribution to journalArticle

Cathodoluminescence
Power electronics
Electric space charge
Leakage currents
Diodes

Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation

Mehta, K., Liu, Y. S., Wang, J., Jeong, H., Detchprohm, T., Park, Y. J., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Jan 1 2018, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

Semiconductor lasers
semiconductor lasers
Electrons
Computer simulation
electrons
8 Citations (Scopus)

Thermal detection of single e-h pairs in a biased silicon crystal detector

Romani, R. K., Brink, P. L., Cabrera, B., Cherry, M., Howarth, T., Kurinsky, N., Moffatt, R. A., Partridge, R., Ponce, F., Pyle, M., Tomada, A., Yellin, S., Yen, J. J. & Young, B. A., Jan 22 2018, In : Applied Physics Letters. 112, 4, 043501.

Research output: Contribution to journalArticle

detectors
silicon
grids
crystals
sensors
2017
15 Citations (Scopus)

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T. & Dupuis, R. D., Aug 1 2017, In : Physica Status Solidi (B) Basic Research. 254, 8, 1600699.

Research output: Contribution to journalArticle

Boron
wurtzite
boron
Metallorganic chemical vapor deposition
Phase structure
6 Citations (Scopus)

A review of the synthesis of reduced defect density InxGa1−xN for all indium compositions

Clinton, E. A., Vadiee, E., Fabien, C. A. M., Moseley, M. W., Gunning, B. P., Doolittle, W. A., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Oct 1 2017, In : Solid-State Electronics. 136, p. 3-11 9 p.

Research output: Contribution to journalArticle

Indium
Defect density
indium
Nitrogen
defects
6 Citations (Scopus)

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

Xie, H., Prioli, R., Torelly, G., Liu, H., Fischer, A. M., Jakomin, R., Mourão, R., Kawabata, R., Pires, M. P., Souza, P. L. & Ponce, F., Apr 12 2017, In : Semiconductor Science and Technology. 32, 5, 055013.

Research output: Contribution to journalArticle

spools
Reels
distribution (property)
Electron energy levels
Semiconductor quantum dots
7 Citations (Scopus)

Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

Wang, S., Li, X., Fischer, A. M., Detchprohm, T., Dupuis, R. D. & Ponce, F., Oct 1 2017, In : Journal of Crystal Growth. 475, p. 334-340 7 p.

Research output: Contribution to journalArticle

Boron
gas flow
Flow of gases
boron
Crystal structure

High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum

Mehta, K., Detchprohm, T., Park, Y. J., Liu, Y. S., Moreno, O., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Oct 25 2017, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Bragg reflectors
visible spectrum
Refractive index
Silver
8 Citations (Scopus)

Origin of high hole concentrations in Mg-doped GaN films

Fischer, A. M., Wang, S., Ponce, F., Gunning, B. P., Fabien, C. A. M. & Doolittle, W. A., 2017, (Accepted/In press) In : Physica Status Solidi (B) Basic Research.

Research output: Contribution to journalArticle

Hole concentration
Metals
Atoms
Growth temperature
Valence bands
3 Citations (Scopus)

Plasticity and optical properties of GaN under highly localized nanoindentation stress fields

Caldas, P. G., Silva, E. M., Prioli, R., Huang, J. Y., Juday, R., Fischer, A. M. & Ponce, F., Mar 28 2017, In : Journal of Applied Physics. 121, 12, 125105.

Research output: Contribution to journalArticle

nanoindentation
plastic properties
stress distribution
slip
optical properties
6 Citations (Scopus)

Refractory In${x}$ Ga1-${x}$ N Solar Cells for High-Temperature Applications

Williams, J. J., McFavilen, H., Fischer, A. M., Ding, D., Young, S., Vadiee, E., Ponce, F., Arena, C., Honsberg, C. & Goodnick, S., Nov 1 2017, In : IEEE Journal of Photovoltaics. 7, 6, p. 1646-1652 7 p., 8068948.

Research output: Contribution to journalArticle

High temperature applications
refractories
Refractory materials
Solar cells
solar cells

Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

Zhao, S., Gao, J., Wang, S., Xie, H., Ponce, F., Goodnick, S. & Chowdhury, S., Dec 1 2017, In : Japanese Journal of Applied Physics. 56, 12, 126502.

Research output: Contribution to journalArticle

Ohmic contacts
electric contacts
air
Air
thermal stresses
10 Citations (Scopus)

Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Detchprohm, T., Liu, Y. S., Mehta, K., Wang, S., Xie, H., Kao, T. T., Shen, S. C., Yoder, P. D., Ponce, F. & Dupuis, R. D., Jan 4 2017, In : Applied Physics Letters. 110, 1, 011105.

Research output: Contribution to journalArticle

Bragg reflectors
reflectance
epitaxy
metalorganic chemical vapor deposition
unity
2016
7 Citations (Scopus)

Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures

Maros, A., Faleev, N., King, R., Honsberg, C., Convey, D., Xie, H. & Ponce, F., Mar 1 2016, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 34, 2, 02L113.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Heterojunctions
Strain relaxation
X rays
Epitaxial films
3 Citations (Scopus)

Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE

Torelly, G., Jakomin, R., Pinto, L. D., Pires, M. P., Ruiz, J., Caldas, P. G., Prioli, R., Xie, H., Ponce, F. & Souza, P. L., Jan 15 2016, In : Journal of Crystal Growth. 434, p. 47-54 8 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Semiconductor quantum dots
Monolayers
Nucleation
quantum dots
12 Citations (Scopus)

Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Liu, Y. S., Haq, A. F. M. S., Kao, T. T., Mehta, K., Shen, S. C., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Xie, H. & Ponce, F., Jun 1 2016, In : Journal of Crystal Growth. 443, p. 81-84 4 p.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Metallorganic chemical vapor deposition
Bragg reflectors
metalorganic chemical vapor deposition
conduction
7 Citations (Scopus)

Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

Xie, H., Prioli, R., Fischer, A. M., Ponce, F., Kawabata, R. M. S., Pinto, L. D., Jakomin, R., Pires, M. P. & Souza, P. L., Jul 21 2016, In : Journal of Applied Physics. 120, 3, 034301.

Research output: Contribution to journalArticle

solar cells
quantum dots
retarding
optical properties
plastics
11 Citations (Scopus)

Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector

Liu, Y. S., Saniul Haq, A. F. M., Mehta, K., Kao, T. T., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Ponce, F., Detchprohm, T. & Dupuis, R. D., Nov 1 2016, In : Applied Physics Express. 9, 11, 111002.

Research output: Contribution to journalArticle

Distributed Bragg reflectors
Surface emitting lasers
Bragg reflectors
surface emitting lasers
conduction
9 Citations (Scopus)

Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition

Liu, Y. S., Wang, S., Xie, H., Kao, T. T., Mehta, K., Jia, X. J., Shen, S. C., Yoder, P. D., Ponce, F., Detchprohm, T. & Dupuis, R. D., Aug 22 2016, In : Applied Physics Letters. 109, 8, 081103.

Research output: Contribution to journalArticle

Bragg reflectors
metalorganic chemical vapor deposition
interlayers
templates
sapphire
2015
27 Citations (Scopus)

Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN

Gunning, B. P., Fabien, C. A. M., Merola, J. J., Clinton, E. A., Doolittle, W. A., Wang, S., Fischer, A. M. & Ponce, F., Jan 28 2015, In : Journal of Applied Physics. 117, 4, 045710.

Research output: Contribution to journalArticle

p-i-n diodes
electronics
conduction bands
light emitting diodes
luminescence
30 Citations (Scopus)

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

Li, X. H., Kao, T. T., Satter, M. M., Wei, Y. O., Wang, S., Xie, H., Shen, S. C., Yoder, P. D., Fischer, A. M., Ponce, F., Detchprohm, T. & Dupuis, R. D., Jan 26 2015, In : Applied Physics Letters. 106, 4, 041115.

Research output: Contribution to journalArticle

ultraviolet emission
quantum well lasers
stimulated emission
sapphire
wavelengths
6 Citations (Scopus)

Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition

Kim, J., Ji, M. H., Detchprohm, T., Dupuis, R. D., Fischer, A. M., Ponce, F. & Ryou, J. H., Sep 28 2015, In : Journal of Applied Physics. 118, 12, 125303.

Research output: Contribution to journalArticle

gallium
metalorganic chemical vapor deposition
liquid phases
flow velocity
vapor pressure
22 Citations (Scopus)

Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

Li, X. H., Wang, S., Xie, H., Wei, Y. O., Kao, T. T., Satter, M. M., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Fischer, A. M. & Ponce, F., May 1 2015, In : Physica Status Solidi (B) Basic Research. 252, 5, p. 1089-1095 7 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire

Growth of III-Nitrides

Dupuis, R. D. & Ponce, F., Apr 1 2015, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 4-5, p. 331-333 3 p.

Research output: Contribution to journalArticle

nitrides
light emitting diodes
Houston (TX)
quaternary alloys
rectifiers
8 Citations (Scopus)

Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Shen, S. C., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Ryou, J. H., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Aug 15 2015, In : IEEE Photonics Technology Letters. 27, 16, p. 1768-1771 4 p., 7120925.

Research output: Contribution to journalArticle

Aluminum
emitters
Waveguides
waveguides
aluminum
18 Citations (Scopus)

Low-temperature growth of InGaN films over the entire composition range by MBE

Fabien, C. A. M., Gunning, B. P., Alan Doolittle, W., Fischer, A. M., Wei, Y. O., Xie, H. & Ponce, F., Jun 20 2015, In : Journal of Crystal Growth. 425, p. 115-118 4 p.

Research output: Contribution to journalArticle

Gallium nitride
Indium
gallium nitrides
Growth temperature
Molecular beam epitaxy
10 Citations (Scopus)

Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells

Li, X., Xie, H., Ponce, F., Ryou, J. H., Detchprohm, T. & Dupuis, R. D., Dec 14 2015, In : Applied Physics Letters. 107, 24, 241109.

Research output: Contribution to journalArticle

stimulated emission
quantum wells
sapphire
optical pumping
surface emitting lasers
6 Citations (Scopus)

Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air

Zhao, S., McFavilen, H., Wang, S., Ponce, F., Arena, C., Goodnick, S. & Chowdhury, S., Dec 29 2015, (Accepted/In press) In : Journal of Electronic Materials. p. 1-5 5 p.

Research output: Contribution to journalArticle

Ohmic contacts
electric contacts
temperature dependence
air
Air
22 Citations (Scopus)

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

Li, X. H., Wei, Y. O., Wang, S., Xie, H., Kao, T. T., Satter, M. M., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Fischer, A. M. & Ponce, F., Mar 15 2015, In : Journal of Crystal Growth. 414, p. 76-80 5 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
metalorganic chemical vapor deposition
sapphire
2014
7 Citations (Scopus)

Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F. & Haigh, S. J., May 30 2014, In : Nanotechnology. 25, 21, 215705.

Research output: Contribution to journalArticle

Nanorods
Molecular beam epitaxy
Spinodal decomposition
Microanalysis
Platelets

High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM

Carpenter, R., Xie, H., Lehner, S., Aoki, T., Mardinly, J., Vahidi, M., Newman, N. & Ponce, F., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 70-71 2 p.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
Field emission
field emission
Energy gap
spatial resolution
12 Citations (Scopus)

InAs quantum dot growth on AlxGa1-xAs by metalorganic vapor phase epitaxy for intermediate band solar cells

Jakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. & Souza, P. L., Sep 7 2014, In : Journal of Applied Physics. 116, 9, 093511.

Research output: Contribution to journalArticle

vapor phase epitaxy
solar cells
quantum dots
photovoltaic cells
spacers
53 Citations (Scopus)

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Li, X. H., Detchprohm, T., Kao, T. T., Satter, M. M., Shen, S. C., Douglas Yoder, P., Dupuis, R. D., Wang, S., Wei, Y. O., Xie, H., Fischer, A. M., Ponce, F., Wernicke, T., Reich, C., Martens, M. & Kneissl, M., Oct 6 2014, In : Applied Physics Letters. 105, 14, 141106.

Research output: Contribution to journalArticle

quantum well lasers
stimulated emission
sapphire
thresholds
quantum wells
9 Citations (Scopus)

Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates

Liu, Y. S., Lochner, Z., Kao, T. T., Satter, M. M., Li, X. H., Ryou, J. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Feb 2014, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 2, p. 258-260 3 p.

Research output: Contribution to journalArticle

quantum well lasers
metalorganic chemical vapor deposition
thresholds
excimer lasers
lasers
32 Citations (Scopus)

Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating

Choi, S., Kim, H. J., Lochner, Z., Kim, J., Dupuis, R. D., Fischer, A. M., Juday, R., Huang, Y., Li, T., Huang, J. Y., Ponce, F. & Ryou, J. H., 2014, In : Journal of Crystal Growth. 388, p. 137-142 6 p.

Research output: Contribution to journalArticle

Gallium
Epitaxial growth
gallium
coatings
Coatings
36 Citations (Scopus)

Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions

Kim, J., Lochner, Z., Ji, M. H., Choi, S., Kim, H. J., Kim, J. S., Dupuis, R. D., Fischer, A. M., Juday, R., Huang, Y., Li, T., Huang, J. Y., Ponce, F. & Ryou, J. H., 2014, In : Journal of Crystal Growth. 388, p. 143-149 7 p.

Research output: Contribution to journalArticle

phytotrons
Gallium
Epitaxial growth
gallium
chambers
19 Citations (Scopus)

Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Fabien, C. A. M., Moseley, M., Gunning, B., Doolittle, W. A., Fischer, A. M., Wei, Y. O. & Ponce, F., Mar 2014, In : IEEE Journal of Photovoltaics. 4, 2, p. 601-606 6 p., 6683005.

Research output: Contribution to journalArticle

Gallium nitride
Indium
gallium nitrides
indium
Solar cells
2013
5 Citations (Scopus)

Capacitance voltage characteristics and electron holography on cubic AlGaN/GaN heterojunctions

As, D. J., Zado, A., Wei, Q. Y., Li, T., Huang, J. Y. & Ponce, F., Aug 2013, In : Japanese Journal of Applied Physics. 52, 8 PART 2, 08JN04.

Research output: Contribution to journalArticle

Electron holography
capacitance-voltage characteristics
holography
Heterojunctions
heterojunctions
54 Citations (Scopus)

Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Mahbub Satter, M., Shen, S. C., Douglas Yoder, P., Ryou, J. H., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A. & Ponce, F., Mar 11 2013, In : Applied Physics Letters. 102, 10, 101110.

Research output: Contribution to journalArticle

lasing
optical pumping
stimulated emission
excimer lasers
metalorganic chemical vapor deposition