• 11204 Citations
  • 49 h-Index
1976 …2021
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Research Output 1976 2020

2011
5 Citations (Scopus)

Plastic hardening in cubic semiconductors by nanoscratching

Caldas, P. G., Prioli, R., Almeida, C. M., Huang, J. Y. & Ponce, F., Jan 1 2011, In : Journal of Applied Physics. 109, 1, 013502.

Research output: Contribution to journalArticle

hardening
plastics
atomic force microscopy
plastic flow
plastic deformation
3 Citations (Scopus)

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Wu, Z. H., Sun, Y. Q., Yin, J., Fang, Y. Y., Dai, J. N., Chen, C. Q., Wei, Q. Y., Li, T., Sun, K. W., Fischer, A. M. & Ponce, F., 2011, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29, 2, 021005.

Research output: Contribution to journalArticle

Gallium nitride
Aluminum Oxide
gallium nitrides
hemispheres
Epitaxial growth
13 Citations (Scopus)

Transmission electron microscopy study of GaInNAs(Sb) thin films grown by atomic hydrogen-assisted molecular beam epitaxy

Oshima, R., Huang, J. Y., Miyashita, N., Matsubara, K., Okada, Y. & Ponce, F., Nov 7 2011, In : Applied Physics Letters. 99, 19, 191907.

Research output: Contribution to journalArticle

molecular beam epitaxy
antimony
transmission electron microscopy
hydrogen
thin films
2010
49 Citations (Scopus)

Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells

Li, T., Fischer, A. M., Wei, Q. Y., Ponce, F., Detchprohm, T. & Wetzel, C., 2010, In : Applied Physics Letters. 96, 3, 031906.

Research output: Contribution to journalArticle

quantum efficiency
quantum wells
radiative recombination
cathodoluminescence
visible spectrum
6 Citations (Scopus)

Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes

Fischer, A. M., Sun, K. W., Juday, R., Ponce, F., Ryou, J. H., Kim, H. J., Choi, S., Kim, S. S. & Dupuis, R. D., Mar 2010, In : Applied Physics Express. 3, 3, 031003.

Research output: Contribution to journalArticle

Growth temperature
Semiconductor quantum wells
Diodes
diodes
Electrons
4 Citations (Scopus)

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Fonseca-Filho, H. D., Almeida, C. M., Prioli, R., Pires, M. P., Souza, P. L., Wu, Z. H., Wei, Q. Y. & Ponce, F., 2010, In : Journal of Applied Physics. 107, 5, 054313.

Research output: Contribution to journalArticle

nanocrystals
nucleation
linear arrays
vapor phase epitaxy
crystal defects
168 Citations (Scopus)

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Choi, S., Kim, H. J., Kim, S. S., Liu, J., Kim, J., Ryou, J. H., Dupuis, R. D., Fischer, A. M. & Ponce, F., May 31 2010, In : Applied Physics Letters. 96, 22, 221105.

Research output: Contribution to journalArticle

nitrides
quantum efficiency
light emitting diodes
N electrons
electrons
75 Citations (Scopus)

Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes

Kim, H. J., Choi, S., Kim, S. S., Ryou, J. H., Yoder, P. D., Dupuis, R. D., Fischer, A. M., Sun, K. & Ponce, F., 2010, In : Applied Physics Letters. 96, 10, 101102.

Research output: Contribution to journalArticle

quantum efficiency
light emitting diodes
electrons
electroluminescence
damage
16 Citations (Scopus)

In-plane polarization of GaN-based heterostructures with arbitrary crystal orientation

Wei, Q. Y., Li, T., Wu, Z. H. & Ponce, F., Oct 2010, In : Physica Status Solidi (A) Applications and Materials Science. 207, 10, p. 2226-2232 7 p.

Research output: Contribution to journalArticle

Crystal orientation
Heterojunctions
Polarization
polarization
crystals
5 Citations (Scopus)

Misfit strain relaxation in m -plane epitaxy of InGaN on ZnO

Wu, Z. H., Sun, K. W., Wei, Q. Y., Fischer, A. M., Ponce, F., Kawai, Y., Iwaya, M., Kamiyama, S., Amano, H. & Akasaki, I., 2010, In : Applied Physics Letters. 96, 7, 071909.

Research output: Contribution to journalArticle

epitaxy
indium
crystal defects
engineers
microstructure
1 Citation (Scopus)

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Liu, J., Zhang, Y., Lochner, Z., Kim, S. S., Kim, H., Ryou, J. H., Shen, S. C., Yoder, P. D., Dupuis, R. D., Wei, Q., Sun, K., Fischer, A. & Ponce, F., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7602. 760219

Research output: Chapter in Book/Report/Conference proceedingConference contribution

InGaN
Epitaxial layers
Laser Diode
Waveguide
Semiconductor lasers
1 Citation (Scopus)

Physica Status Solidi C: Preface

Briot, O., Hoffmann, A., Nanishi, Y. & Ponce, F., 2010, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 7, 1, p. 7-8 2 p.

Research output: Contribution to journalArticle

6 Citations (Scopus)

Polarization effects in 2-DEG and basic solid state physics 2-DHG AlGaN/AlN/GaN multi-heterostructures measured by electron holography

Wei, Q. Y., Wu, Z. H., Ponce, F., Hertkorn, J. & Scholz, F., Jul 2010, In : Physica Status Solidi (B) Basic Research. 247, 7, p. 1722-1724 3 p.

Research output: Contribution to journalArticle

Electron holography
Solid state physics
solid state physics
holography
Heterojunctions
8 Citations (Scopus)

Strain relaxation mechanisms in AlGaN epitaxy on AlN templates

Wu, Z., Nonaka, K., Kawai, Y., Asai, T., Ponce, F., Chen, C., Iwaya, M., Kamiyama, S., Amano, H. & Akasaki, I., Nov 2010, In : Applied Physics Express. 3, 11, 111003.

Research output: Contribution to journalArticle

Strain relaxation
Burgers vector
Dislocations (crystals)
Epitaxial growth
epitaxy
2009
19 Citations (Scopus)

Comparative study on MOCVD growth of a-plane GaN films on r-plane sapphire substrates using GaN, AlGaN, and AlN buffer layers

Dai, J. N., Wu, Z. H., Yu, C. H., Zhang, Q., Sun, Y. Q., Xiong, Y. K., Han, X. Y., Tong, L. Z., He, Q. H., Ponce, F. & Chen, C. Q., Sep 2009, In : Journal of Electronic Materials. 38, 9, p. 1938-1943 6 p.

Research output: Contribution to journalArticle

Aluminum Oxide
Metallorganic chemical vapor deposition
Buffer layers
Sapphire
metalorganic chemical vapor deposition
1 Citation (Scopus)

Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure

Li, R., Zhang, J., Chen, L., Zhao, H., Yang, Z., Yu, T., Li, D., Liu, Z., Chen, W., Yang, Z., Zhang, G., Gan, Z., Hu, X., Wei, Q., Li, T. & Ponce, F., 2009, In : Applied Physics Letters. 94, 21, 211103.

Research output: Contribution to journalArticle

cathodoluminescence
ultraviolet lasers
semiconductor lasers
quantum wells
electrons
14 Citations (Scopus)

Evidence of two-dimensional hole gas in p-type AlGaN/AlN/GaN heterostructures

Wei, Q., Wu, Z., Sun, K., Ponce, F., Hertkorn, J. & Scholz, F., Dec 2009, In : Applied Physics Express. 2, 12, 121001.

Research output: Contribution to journalArticle

Heterojunctions
Gases
gases
Electron holography
Energy barriers
12 Citations (Scopus)

Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Hertkorn, J., Thapa, S. B., Wunderer, T., Scholz, F., Wu, Z. H., Wei, Q. Y., Ponce, F., Moram, M. A., Humphreys, C. J., Vierheilig, C. & Schwarz, U. T., 2009, In : Journal of Applied Physics. 106, 1, 013720.

Research output: Contribution to journalArticle

vapor phase epitaxy
modulation
conductivity
light emitting diodes
electroluminescence
5 Citations (Scopus)

Measurement of the solubility of ammonia and nitrogen in gallium at atmospheric pressure

Garcia, R., Ren, B., Thomas, A. C. & Ponce, F., Jan 7 2009, In : Journal of Alloys and Compounds. 467, 1-2, p. 611-613 3 p.

Research output: Contribution to journalArticle

Gallium
Ammonia
Atmospheric pressure
Nitrogen
Solubility
27 Citations (Scopus)

Misfit strain relaxation by stacking fault generation in InGaN quantum wells grown on m-plane GaN

Fischer, A. M., Wu, Z., Sun, K., Wei, Q., Huang, Y., Senda, R., Iida, D., Iwaya, M., Amano, H. & Ponce, F., Apr 2009, In : Applied Physics Express. 2, 4, p. 410021-410023 3 p.

Research output: Contribution to journalArticle

Strain relaxation
Stacking faults
crystal defects
Semiconductor quantum wells
quantum wells
7 Citations (Scopus)

Nanoscale dislocation patterning by scratching in an atomic force microscope

Ponce, F., Wei, Q. Y., Wu, Z. H., Fonseca-Filho, H. D., Almeida, C. M., Prioli, R. & Cherns, D., 2009, In : Journal of Applied Physics. 106, 7, 076106.

Research output: Contribution to journalArticle

microscopes
indium phosphides
screw dislocations
linear arrays
locking

Physica Status Solidi (A) Applications and Materials: Preface

Allerman, A., Dupuis, R. D., Khan, A. & Ponce, F., Feb 2009, In : Physica Status Solidi (A) Applications and Materials Science. 206, 2, p. 193-194 2 p.

Research output: Contribution to journalArticle

2008
10 Citations (Scopus)

Atomic arrangement at the AlN/Si(110) interface

Contreras, O. E., Ruiz-Zepeda, F., Dadgar, A., Krost, A. & Ponce, F., Jun 2008, In : Applied Physics Express. 1, 6, p. 611041-611043 3 p.

Research output: Contribution to journalArticle

Metallorganic vapor phase epitaxy
Lattice mismatch
Substrates
High resolution transmission electron microscopy
Model structures
31 Citations (Scopus)

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

Liu, J. P., Limb, J. B., Ryou, J. H., Yoo, D., Horne, C. A., Dupuis, R. D., Wu, Z. H., Fischer, A. M., Ponce, F., Hanser, A. D., Liu, L., Preble, E. A. & Evans, K. R., 2008, In : Applied Physics Letters. 92, 1, 011123.

Research output: Contribution to journalArticle

light emitting diodes
low currents
crystal defects
electroluminescence
metalorganic chemical vapor deposition
51 Citations (Scopus)

Control of quantum-confined Stark effect in InGaNGaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

Ryou, J. H., Lee, W., Limb, J., Yoo, D., Liu, J. P., Dupuis, R. D., Wu, Z. H., Fischer, A. M. & Ponce, F., 2008, In : Applied Physics Letters. 92, 10, 101113.

Research output: Contribution to journalArticle

Stark effect
nitrides
light emitting diodes
quantum wells
electrostatics
9 Citations (Scopus)

Effect of native oxide mechanical deformation on InP nanoindentation

Almeida, C. M., Prioli, R. & Ponce, F., 2008, In : Journal of Applied Physics. 104, 11, 113509.

Research output: Contribution to journalArticle

nanoindentation
oxides
indium phosphides
plastic flow
piles
6 Citations (Scopus)

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Garcia, R., Thomas, A. C. & Ponce, F., Jun 1 2008, In : Journal of Crystal Growth. 310, 12, p. 3131-3134 4 p.

Research output: Contribution to journalArticle

Thick films
thick films
Luminescent devices
Ammonium Chloride
ammonium chlorides
Heterojunctions
Solar cells
Tunnel junctions
Photovoltaic cells
Chemical vapor deposition
8 Citations (Scopus)

Photoluminescence of near-lattice-matched GaNAlInN quantum wells grown on free-standing GaN and on sapphire substrates

Tan, L. T., Martin, R. W., O'Donnell, K. P., Watson, I. M., Wu, Z. H. & Ponce, F., 2008, In : Applied Physics Letters. 92, 3, 031907.

Research output: Contribution to journalArticle

sapphire
quantum wells
photoluminescence
excitation
screening
24 Citations (Scopus)

Role of the buffer layer thickness on the formation of basal plane stacking faults in a -plane GaN epitaxy on r -sapphire

Wu, Z. H., Fischer, A. M., Ponce, F., Yokogawa, T., Yoshida, S. & Kato, R., 2008, In : Applied Physics Letters. 93, 1, 011901.

Research output: Contribution to journalArticle

crystal defects
epitaxy
sapphire
buffers
luminescence
3 Citations (Scopus)

SEM characterization of silicon nanostructures: Can we meet the challenge?

Myhajlenko, S., Luby, A. S., Fischer, A. M., Ponce, F. & Tracy, C., Jul 2008, In : Scanning. 30, 4, p. 310-316 7 p.

Research output: Contribution to journalArticle

Cathodoluminescence
cathodoluminescence
Nanostructures
Electron microscopes
Visualization
60 Citations (Scopus)

Structural and optical properties of nonpolar GaN thin films

Wu, Z. H., Fischer, A. M., Ponce, F., Bastek, B., Christen, J., Wernicke, T., Weyers, M. & Kneissl, M., 2008, In : Applied Physics Letters. 92, 17, 171904.

Research output: Contribution to journalArticle

optical properties
crystal defects
sapphire
masks
thin films
6 Citations (Scopus)

Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition

Liu, J., Ryou, J. H., Lochner, Z., Limb, J., Yoo, D., Dupuis, R. D., Wu, Z., Fischer, A. M. & Ponce, F., Nov 15 2008, In : Journal of Crystal Growth. 310, 23, p. 5166-5169 4 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Surface morphology
Light emitting diodes
light emitting diodes
58 Citations (Scopus)

Synthesis and luminescence properties of ZnO nanostructures produced by the sol-gel method

Li, J., Srinivasan, S., He, G. N., Kang, J. Y., Wu, S. T. & Ponce, F., Feb 1 2008, In : Journal of Crystal Growth. 310, 3, p. 599-603 5 p.

Research output: Contribution to journalArticle

Sol-gel process
Luminescence
Nanostructures
rods
Platelets
15 Citations (Scopus)

Time-resolved cathodoluminescence of Mg-doped GaN

Fischer, A. M., Srinivasan, S., Ponce, F., Monemar, B., Bertram, F. & Christen, J., 2008, In : Applied Physics Letters. 93, 15, 151901.

Research output: Contribution to journalArticle

cathodoluminescence
replicas
magnesium
excitons
luminescence
2007
3 Citations (Scopus)

AlxGa1-xN (0≤x≤1) nanocrystalline powder by pyrolysis route

Garcia, R., Srinivasan, S., Contreras, O. E., Thomas, A. C. & Ponce, F., Oct 1 2007, In : Journal of Crystal Growth. 308, 1, p. 198-203 6 p.

Research output: Contribution to journalArticle

Nanocrystalline powders
Gallium
Aluminum
Ammonia
gallium
11 Citations (Scopus)

Atomic force nanolithography of InP for site control growth of InAs nanostructures

Fonseca-Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., 2007, In : Applied Physics Letters. 90, 1, 013117.

Research output: Contribution to journalArticle

nanoindentation
vapor phase epitaxy
nucleation
defects
geometry
10 Citations (Scopus)

Basal-plane slip in InGaNGaN heterostructures in the presence of threading dislocations

Mei, J., Liu, R., Ponce, F., Omiya, H. & Mukai, T., 2007, In : Applied Physics Letters. 90, 17, 171922.

Research output: Contribution to journalArticle

slip
mesas
indium
ledges
propagation
18 Citations (Scopus)

Correlation of spectral luminescence with threading dislocations in green-light-emitting InGaN quantum wells

Brooksby, J. C., Mei, J. & Ponce, F., 2007, In : Applied Physics Letters. 90, 23, 231901.

Research output: Contribution to journalArticle

quantum wells
luminescence
microstructure
cathodoluminescence
sapphire
10 Citations (Scopus)

Determination of the electronic band structure for a graded modulation-doped AlGaNAlNGaN superlattice

Wu, Z. H., Ponce, F., Hertkorn, J. & Scholz, F., 2007, In : Applied Physics Letters. 91, 14, 142121.

Research output: Contribution to journalArticle

modulation
barrier layers
profiles
electronics
holography
21 Citations (Scopus)

Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates

Mei, J., Ponce, F., Fareed, R. S. Q., Yang, J. W. & Khan, M. A., 2007, In : Applied Physics Letters. 90, 22, 221909.

Research output: Contribution to journalArticle

aluminum nitrides
epitaxy
coalescing
sapphire
edge dislocations
25 Citations (Scopus)

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

Wu, Z. H., Fischer, A. M., Ponce, F., Lee, W., Ryou, J. H., Limb, J., Yoo, D. & Dupuis, R. D., 2007, In : Applied Physics Letters. 91, 4, 041915.

Research output: Contribution to journalArticle

light emitting diodes
quantum wells
electric fields
hydrogen ions
cathodoluminescence
7 Citations (Scopus)

Growth of InAs nanostructures on InP using atomic-force nanolithography

Fonseca Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., Dec 2007, In : Applied Physics A: Materials Science and Processing. 89, 4, p. 945-949 5 p.

Research output: Contribution to journalArticle

Nanolithography
Nanostructures
nucleation
nanoindentation
Nucleation
22 Citations (Scopus)

Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography

Wu, Z. H., Stevens, M., Ponce, F., Lee, W., Ryou, J. H., Yoo, D. & Dupuis, R. D., 2007, In : Applied Physics Letters. 90, 3, 032101.

Research output: Contribution to journalArticle

holography
electrostatics
electrons
charge distribution
electron gas
18 Citations (Scopus)

Metal-organic hydride vapor phase epitaxy of AlxGa 1-xN films over sapphire

Fareed, Q., Adivarahan, V., Gaevski, M., Katona, T., Mei, J., Ponce, F. & Khan, A., Aug 10 2007, In : Japanese Journal of Applied Physics, Part 2: Letters. 46, 29-32

Research output: Contribution to journalArticle

Vapor phase epitaxy
Sapphire
Hydrides
vapor phase epitaxy
hydrides
22 Citations (Scopus)

Optical properties of highly luminescent zinc oxide tetrapod powders

Fischer, A. M., Srinivasan, S., Garcia, R., Ponce, F., Guao, S. E., Di Lello, B. C., Moura, F. J. & Solórzano, I. G., 2007, In : Applied Physics Letters. 91, 12, 121905.

Research output: Contribution to journalArticle

cathodoluminescence
zinc oxides
optical properties
zinc
evaporation
8 Citations (Scopus)

Synthesis of highly luminescent, undoped, Mg-doped and Si-doped GaN powders

Garcia, R., Bell, A., Thomas, A. C. & Ponce, F., Jun 1 2007, In : Journal of Crystal Growth. 304, 1, p. 225-232 8 p.

Research output: Contribution to journalArticle

Crystallites
Powders
crystallites
Silicon
Ammonia
2006
9 Citations (Scopus)

Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

Srinivasan, S., Stevens, M., Ponce, F., Omiya, H. & Mukai, T., 2006, In : Applied Physics Letters. 89, 23, 231908.

Research output: Contribution to journalArticle

quantum wells
electrostatics
carrier lifetime
geometry
cathodoluminescence
53 Citations (Scopus)

Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures

Liu, R., Mei, J., Srinivasan, S., Ponce, F., Omiya, H., Narukawa, Y. & Mukai, T., 2006, In : Applied Physics Letters. 89, 20, 201911.

Research output: Contribution to journalArticle

slip
critical loading
indium
interactions
energy
relieving
epitaxy
nitrides
slip
sapphire