• 11204 Citations
  • 49 h-Index
1976 …2021
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Research Output 1976 2020

1990
5 Citations (Scopus)

In-situ growth of superconducting yba2cu3oyfilms by pulsed laser deposition

Boyce, J. B., Connell, G. A. N., Fork, D. K., Fenner, D. B., Char, K., Ponce, F., Bridges, F., Tramontana, J., Viano, A. M., Laderman, S. S., Taber, R. C., Tahara, S. & Geballe, T. H., Mar 19 1990, In : Proceedings of SPIE - The International Society for Optical Engineering. 1187, p. 136-147 12 p.

Research output: Contribution to journalArticle

Pulsed Laser Deposition
Pulsed laser deposition
pulsed laser deposition
Substrate
Substrates
30 Citations (Scopus)

Misfit dislocations in GaAs heteroepitaxy on (001) Si

Gerthsen, D., Biegelsen, D. K., Ponce, F. & Tramontana, J. C., 1990, In : Journal of Crystal Growth. 106, 2-3, p. 157-165 9 p.

Research output: Contribution to journalArticle

Dislocations (crystals)
Epitaxial growth
Stacking faults
crystal defects
Crystal atomic structure
1989
22 Citations (Scopus)

High-resolution transmission electron microscopy of 60° dislocations in si-GaAs

Gerthsen, D., Ponce, F. & Anderson, G. B., May 1989, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 59, 5, p. 1045-1058 14 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
transmission electron microscopy
high resolution
gallium arsenide
configurations
1 Citation (Scopus)

Laser patterned desorption within an upflow metalorganic chemical vapor deposition reactor

Epler, J. E., Bringans, R. D., Ponce, F., Anderson, G. B., Treat, D. W. & Paoli, T. L., Dec 2 1989, In : Applied Surface Science. 43, 1-4, p. 432-438 7 p.

Research output: Contribution to journalArticle

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Desorption
desorption
reactors
12 Citations (Scopus)

Microscopic aspects of oxygen precipitation in silicon

Ponce, F. & Hahn, S., 1989, In : Materials Science and Engineering B. 4, 1-4, p. 11-17 7 p.

Research output: Contribution to journalArticle

Silicon
Oxygen
Frenkel defects
Defects
silicon
4 Citations (Scopus)

On the structure of small palladium particles

Herrera, R., Avalos-Borja, M., Ponce, F., Schabes-Retchkiman, P., Romeu, D. & José-Yacamán, M., 1989, In : Scripta Metallurgica. 23, 9, p. 1555-1558 4 p.

Research output: Contribution to journalArticle

Palladium
Microscopic examination
36 Citations (Scopus)

Simple ion milling preparation of 〈111〉 tungsten tips

Biegelsen, D. K., Ponce, F. & Tramontana, J. C., 1989, In : Applied Physics Letters. 54, 13, p. 1223-1225 3 p.

Research output: Contribution to journalArticle

tungsten
preparation
ions
ion beams
microscopes
12 Citations (Scopus)

Thin film backside gettering in n-type (100) Czochralski silicon during simulated CMOS process cycles

Partanen, J., Tuomi, T., Tilli, M., Hahn, S., Wong, C. C. D. & Ponce, F., May 1989, In : Journal of Materials Research. 4, 3, p. 623-633 11 p.

Research output: Contribution to journalArticle

Silicon
CMOS
Polysilicon
Thin films
cycles
1988
40 Citations (Scopus)

Effects of heavy boron doping upon oxygen precipitation in Czochralski silicon

Hahn, S., Ponce, F., Tiller, W. A., Stojanoff, V., Bulla, D. A. P. & Castro, W. E., 1988, In : Journal of Applied Physics. 64, 9, p. 4454-4465 12 p.

Research output: Contribution to journalArticle

boron
precipitates
annealing
silicon
oxygen
19 Citations (Scopus)

Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

Biegelsen, D. K., Ponce, F., Krusor, B. S., Tramontana, J. C. & Yingling, R. D., 1988, In : Applied Physics Letters. 52, 21, p. 1779-1781 3 p.

Research output: Contribution to journalArticle

molecular beams
nucleation
coalescing
buffers
vapors
12 Citations (Scopus)

Layer disordering of GaAs-AlGaAs superlattices by diffusion of laser-incorporated Si

Epler, J. E., Ponce, F., Endicott, F. J. & Paoli, T. L., 1988, In : Journal of Applied Physics. 64, 7, p. 3439-3444 6 p.

Research output: Contribution to journalArticle

aluminum gallium arsenides
superlattices
impurities
lasers
transmission electron microscopy
68 Citations (Scopus)

Preparation of oriented Bi-Ca-Sr-Cu-O thin films using pulsed laser deposition

Fork, D. K., Boyce, J. B., Ponce, F., Johnson, R. I., Anderson, G. B., Connell, G. A. N., Eom, C. B. & Geballe, T. H., 1988, In : Applied Physics Letters. 53, 4, p. 337-339 3 p.

Research output: Contribution to journalArticle

pulsed laser deposition
preparation
superconducting films
oxygen
thin films
23 Citations (Scopus)

The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si

Bringans, R. D., Olmstead, M. A., Ponce, F., Biegelsen, D. K., Krusor, B. S. & Yingling, R. D., 1988, In : Journal of Applied Physics. 64, 7, p. 3472-3475 4 p.

Research output: Contribution to journalArticle

epitaxy
wedges
coalescing
spectroscopy
wetting
1987
4 Citations (Scopus)

ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

Ponce, F., Anderson, G. B. & Ballingall, J. M., 1987, Materials Research Society Symposia Proceedings. Farrow, R. F. C., Schetzina, J. F. & Cheung, J. T. (eds.). Pittsburgh, PA, USA: Materials Research Soc, Vol. 90. p. 199-208 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular beams
Epitaxial layers
Epitaxial growth
High resolution transmission electron microscopy
Crystal atomic structure
403 Citations (Scopus)

Defects in single-crystal silicon induced by hydrogenation

Johnson, N. M. P., Ponce, F., Street, R. A. & Nemanich, R., 1987, In : Physical Review B. 35, 8, p. 4166-4169 4 p.

Research output: Contribution to journalArticle

Silicon
Hydrogenation
hydrogenation
Deep level transient spectroscopy
Photoluminescence spectroscopy
16 Citations (Scopus)

Effects of boron concentration upon oxygen precipitation in CZ silicon

Bulla, D. A. P., Castro, W. E., Stojanoff, V., Ponce, F., Hahn, S. & Tiller, W. A., Nov 1 1987, In : Journal of Crystal Growth. 85, 1-2, p. 91-96 6 p.

Research output: Contribution to journalArticle

Boron
Silicon
X ray scattering
boron
Growth kinetics
44 Citations (Scopus)

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. & Collins, D. M., 1987, In : Journal of Applied Physics. 61, 11, p. 5159-5169 11 p.

Research output: Contribution to journalArticle

Schottky diodes
diodes
capacitance-voltage characteristics
electric potential
metals
111 Citations (Scopus)

Initial stages of epitaxial growth of GaAs on (100) silicon

Biegelsen, D. K., Ponce, F., Smith, A. J. & Tramontana, J. C., 1987, In : Journal of Applied Physics. 61, 5, p. 1856-1859 4 p.

Research output: Contribution to journalArticle

silicon
spacing
crystal defects
molecular beams
thick films
78 Citations (Scopus)

Ion milled tips for scanning tunneling microscopy

Biegelsen, D. K., Ponce, F., Tramontana, J. C. & Koch, S. M., 1987, In : Applied Physics Letters. 50, 11, p. 696-698 3 p.

Research output: Contribution to journalArticle

scanning tunneling microscopy
ions
tungsten
curvature
radii
1986
3 Citations (Scopus)

EFFECTIVENESS OF CVD THIN FILM BACKSIDE GETTERING AND ITS INTERACTION WITH INTRINSIC GETTERING.

Wong, C. C. D., Hahn, S., Ponce, F. & Rek, Z. U., 1986, Materials Research Society Symposia Proceedings. Pittsburgh, PA, USA: Materials Research Soc, Vol. 71. p. 33-38 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Polysilicon
Chemical vapor deposition
Thin films
Carrier lifetime
Silicon
16 Citations (Scopus)

ELECTRICAL PROPERTIES AND STRUCTURAL DEFECTS IN EPITAXIAL CaF//2 ON Si.

Schowalter, L. J., Fathauer, R. W., Ponce, F., Anderson, G. & Hashimoto, S., 1986, Materials Research Society Symposia Proceedings. Fan, J. C. C. & Poate, J. M. (eds.). Pittsburgh, PA, USA: Materials Research Soc, Vol. 67. p. 125-133 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electric properties
Ions
Defects
High resolution transmission electron microscopy
Capacitance measurement
5 Citations (Scopus)

INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON (100) SILICON.

Biegelsen, D. K., Ponce, F., Smith, A. J. & Tramontana, J. C., 1986, Materials Research Society Symposia Proceedings. Fan, J. C. C. & Poate, J. M. (eds.). Pittsburgh, PA, USA: Materials Research Soc, Vol. 67. p. 45-50 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Growth kinetics
Stacking faults
Thick films
Surface morphology
41 Citations (Scopus)

Interface structure in heteroepitaxial CdTe on GaAs(100)

Ponce, F., Anderson, G. B. & Ballingall, J. M., Mar 3 1986, In : Surface Science. 168, 1-3, p. 564-570 7 p.

Research output: Contribution to journalArticle

Burgers vector
Substrates
High resolution transmission electron microscopy
Epitaxial growth
Molecular beam epitaxy
3 Citations (Scopus)

OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED CZ SILICON.

Stojanoff, V., Pimentel, C. A., Bulla, D. A., Castro, W. E., Hahn, S. & Ponce, F., 1986, Proceedings - The Electrochemical Society. Huff, H. R., Abe, T. & Kolbesen, B. (eds.). Electrochemical Soc, Vol. 86-4. p. 800-812 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Boron
Silicon
Defects
Oxygen
Vacancies
11 Citations (Scopus)

PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE.

Tsai, C. C., Street, R. A., Ponce, F. & Anderson, G. B., 1986, Materials Research Society Symposia Proceedings. Pittsburgh, PA, USA: Materials Research Soc, Vol. 70. p. 351-359 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Amorphous silicon
Nitrides
Multilayers
Dangling bonds
Electronic properties
94 Citations (Scopus)

Thermodynamic and kinetic considerations on the equilibrium shape for thermally induced microdefects in Czochralski silicon

Tiller, W. A., Hahn, S. & Ponce, F., 1986, In : Journal of Applied Physics. 59, 9, p. 3255-3266 12 p.

Research output: Contribution to journalArticle

silicon dioxide
thermodynamics
precipitates
kinetics
silicon
1985
20 Citations (Scopus)
zinc selenides
metalorganic chemical vapor deposition
crystals
defects
grain boundaries
17 Citations (Scopus)

Interface effects in amorphous silicon/nitride multilayers

Tsai, C. C., Thompson, M. J., Street, R. A., Stutzmann, M. & Ponce, F., Dec 2 1985, In : Journal of Non-Crystalline Solids. 77-78, PART 2, p. 995-998 4 p.

Research output: Contribution to journalArticle

Secondary ion mass spectrometry
Amorphous silicon
Silicon nitride
silicon nitrides
amorphous silicon
42 Citations (Scopus)

RESONANT TUNNELING IN GaAs/AlAs HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.

Bonnefoi, A. R., Collins, R. T., McGill, T. C., Burnham, R. D. & Ponce, F., Feb 1 1985, In : Applied Physics Letters. 46, 3, p. 285-287 3 p.

Research output: Contribution to journalArticle

metalorganic chemical vapor deposition
resonant tunneling
curves
quantum wells
energy levels
1 Citation (Scopus)

STRUCTURE OF MICRODEFECTS IN SEMICONDUCTING MATERIALS.

Ponce, F., 1985, Institute of Physics Conference Series. 76 ed. p. 1-10 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High resolution electron microscopy
Electron microscopy
Heat treatment
Silicon
Processing
1984
2 Citations (Scopus)

STRUCTURE OF LATTICE DEFECTS IN SEMI-INSULATING LEC GAAS.

Ponce, F., Wang, F. C. & Hiskes, R., 1984, Unknown Host Publication Title. Look, D. C. & Blakemore, J. S. (eds.). Shiva Publ Ltd, Nantwich, Engl Also, p. 68-75 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystal defects
Defects
Precipitates
High resolution transmission electron microscopy
Crystal lattices
1983

CRYSTALLINE PARTICLES IN THERMALLY GROWN SILICON DIOXIDE.

Ponce, F. & Yamashita, T., 1983, Materials Research Society Symposia Proceedings. Vol. 14. p. 201-205 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

silicon dioxide

GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE LT AN BR 100 RT AN BR Si WAFERS.

Murray, E. M., Scott, M. P., Hahn, S. & Ponce, F., 1983, Proceedings - The Electrochemical Society. Bullis, W. M. & Kimerling, L. C. (eds.). Pennington, NJ, USA: Electrochemical Soc Inc, Vol. 83-9. p. 220-228 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

HIGH RESOLUTION ELECTRON MICROSCOPY OF II-IV COMPOUND SEMICONDUCTORS.

Sinclair, R., Ponce, F., Yamashita, T. & Smith, D., 1983, Institute of Physics Conference Series. 67 ed. Bristol, Engl: Inst of Physics, p. 103-108 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

electron microscopy
high resolution
2 Citations (Scopus)

HIGH VOLTAGE RESOLUTION ELECTRON MICROSCOPY OF COMPOUND SEMICONDUCTORS.

Smith, D., Ponce, F., Yamashita, T. & Sinclair, R., 1983, Lawrence Berkeley Laboratory (Report) LBL. Fisher, R. M., Gronsky, R. & Westmacott, K. H. (eds.). p. 31-34 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crystal defects
Electron microscopy
Electron microscopes
Semiconductor materials
Electric potential
13 Citations (Scopus)
Organometallics
Heterojunctions
Chemical vapor deposition
Luminescence
Photoluminescence
36 Citations (Scopus)

Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition

Ponce, F., Stutius, W. & Werthen, J. G., Jun 17 1983, In : Thin Solid Films. 104, 1-2, p. 133-143 11 p.

Research output: Contribution to journalArticle

Organometallics
Heterojunctions
heterojunctions
Chemical vapor deposition
vapor deposition
8 Citations (Scopus)

STRUCTURAL CHARACTERIZATION OF LOW-DEFECT-DENSITY SILICON ON SAPPHIRE.

Carey, K. W., Ponce, F., Amano, J. & Aranovich, J., Aug 1983, In : Journal of Applied Physics. 54, 8, p. 4414-4420 7 p.

Research output: Contribution to journalArticle

sapphire
defects
silicon
brackets
epitaxy
38 Citations (Scopus)

Structure of thermally induced microdefects in Czochralski silicon after high-temperature annealing

Ponce, F., Yamashita, T. & Hahn, S., 1983, In : Applied Physics Letters. 43, 11, p. 1051-1053 3 p.

Research output: Contribution to journalArticle

annealing
silicon
crystal defects
flat surfaces
precipitates
4 Citations (Scopus)

STRUCTURE OF THERMALLY-INDUCED MICRODEFECTS IN CZ SILICON.

Ponce, F., Yamashita, T. & Hahn, S., 1983, Proceedings - The Electrochemical Society. Bullis, W. M. & Kimerling, L. C. (eds.). Pennington, NJ, USA: Electrochemical Soc Inc, Vol. 83-9. p. 105-114 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
5 Citations (Scopus)

THERMALLY INDUCED MICRO-DEFECTS IN CZ SILICON: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

Ponce, F., Hahn, S., Yamashita, T., Scott, M. & Carruthers, J. R., 1983, Institute of Physics Conference Series. 67 ed. Bristol, Engl: Inst of Physics, p. 65-70 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

electron microscopy
high resolution
defects
silicon
1982
35 Citations (Scopus)

Dynamic observation of defect annealing in CdTe at lattice resolution

Sinclair, R., Ponce, F., Yamashita, T., Smith, D., Camps, R. A., Freeman, L. A., Erasmus, S. J., Nixon, W. C., Smith, K. C. A. & Catto, C. J. D., 1982, In : Nature. 298, 5870, p. 127-131 5 p.

Research output: Contribution to journalArticle

annealing
defects
display devices
slip
electron microscopes
35 Citations (Scopus)

Fault-free silicon at the silicon/sapphire interface

Ponce, F., 1982, In : Applied Physics Letters. 41, 4, p. 371-373 3 p.

Research output: Contribution to journalArticle

sapphire
silicon
chemical bonds
silicon films
16 Citations (Scopus)

HIGH-RESOLUTION LATTICE IMAGING OF CADMIUM TELLURIDE.

Yamashita, T., Ponce, F., Pirouz, P. & Sinclair, R., Apr 1982, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 45, 4, p. 693-711 19 p.

Research output: Contribution to journalArticle

Tellurium
Cadmium telluride
cadmium tellurides
Cadmium
Imaging techniques
4 Citations (Scopus)

Imaging of interfaces in semiconductor materials using high resolution transmission electron microscopy

Ponce, F., 1982, In : Ultramicroscopy. 9, 3, p. 215-219 5 p.

Research output: Contribution to journalArticle

High resolution transmission electron microscopy
Heterojunctions
Semiconductor materials
Imaging techniques
transmission electron microscopy
1981
36 Citations (Scopus)

Atomic motion on the surface of a cadmium telluride single crystal

Sinclair, R., Yamashita, T. & Ponce, F., 1981, In : Nature. 290, 5805, p. 386-388 3 p.

Research output: Contribution to journalArticle

cadmium tellurides
single crystals
photoelectronics
crystal lattices
clocks
5 Citations (Scopus)

IMAGING OF DEFECTS IN CADMIUM TELLURIDE USING HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY.

Ponce, F., Yamashita, T., Bube, R. H. & Sinclair, R., 1981, Mat Res Soc Symp Proc. Vol. 2. p. 503-508 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

cadmium tellurides
High resolution transmission electron microscopy
Electron microscopy
electron microscopy
Imaging techniques
31 Citations (Scopus)

Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy

Ponce, F. & Aranovich, J., 1981, In : Applied Physics Letters. 38, 6, p. 439-441 3 p.

Research output: Contribution to journalArticle

sapphire
transmission electron microscopy
high resolution
silicon
vapor deposition
29 Citations (Scopus)

Native tellurium dioxide layer on cadmium telluride: A high-resolution electron microscopy study

Ponce, F., Sinclair, R. & Bube, R. H., 1981, In : Applied Physics Letters. 39, 12, p. 951-953 3 p.

Research output: Contribution to journalArticle

cadmium tellurides
tellurium
dioxides
electron microscopy
high resolution
1 Citation (Scopus)

SILICON-SAPPHIRE INTERFACE: A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY.

Ponce, F., 1981, Mat Res Soc Symp Proc. p. 285-290 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Aluminum Oxide
High resolution electron microscopy
Silicon
Electron microscopy
electron microscopy