• 11257 Citations
  • 49 h-Index
1976 …2021

Research output per year

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Research Output

2000

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

McCartney, M., Ponce, F., Cai, J. & Bour, D. P., May 22 2000, In : Applied Physics Letters. 76, 21, p. 3055-3057 3 p.

Research output: Contribution to journalArticle

51 Scopus citations

Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

Stirman, J. N., Ponce, F., Pavlovska, A., Tsong, I. S. T. & Smith, D., Feb 14 2000, In : Applied Physics Letters. 76, 7, p. 822-824 3 p.

Research output: Contribution to journalArticle

27 Scopus citations
1999

Defect formation near GaN surfaces and interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., Ponce, F., Yang, Y., Lapeyre, G. J., MacKenzie, J. D. & Abernathy, C. R., Dec 15 1999, In : Physica B: Condensed Matter. 273-274, p. 70-74 5 p.

Research output: Contribution to journalConference article

24 Scopus citations

Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

Levin, T. M., Jessen, G. H., Ponce, F. & Brillson, L. J., Dec 1 1999, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 6, p. 2545-2552 8 p.

Research output: Contribution to journalArticle

28 Scopus citations

Localized states at InGaN/GaN quantum well interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H. & Ponce, F., Dec 13 1999, In : Applied Physics Letters. 75, 24, p. 3835-3837 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Measurement of the piezoelectric field across strained InGaN/GaN layers by electron holography

Cherns, D., Barnard, J. & Ponce, F. A., Jul 2 1999, In : Solid State Communications. 111, 5, p. 281-285 5 p.

Research output: Contribution to journalArticle

40 Scopus citations
1998

Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy

Cherns, D., Young, W. T., Saunders, M., Steeds, J. W., Ponce, F. A. & Nakamura, S., Jan 1998, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 77, 1, p. 273-286 14 p.

Research output: Contribution to journalArticle

45 Scopus citations
1997

Cathodoluminescence studies of InGaN quantum wells

Ponce, F., Galloway, S. A., Goetz, W. & Kern, R. S., 1997, Materials Research Society Symposium - Proceedings. Phillpot, S. R., Bristowe, P. D., Stroud, D. G. & Smith, J. R. (eds.). MRS, Vol. 482. p. 625-630 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

Cherns, D., Young, W. T. & Ponce, F. A., Dec 18 1997, In : Materials Science and Engineering B. 50, 1-3, p. 76-81 6 p.

Research output: Contribution to journalArticle

37 Scopus citations

Characterization of OMVPE-grown AlGaInP heterostructures

Bour, D. P., Chung, H. F., Gotz, W., Romano, L., Krusor, B. S., Hofstetter, D., Rudaz, S., Kuo, C. P., Ponce, F., Johnson, N. M., Craford, M. G. & Bringans, R. D., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 509-518 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

29 Scopus citations

Defects and interfaces in GaN epitaxy

Ponce, F. A., Feb 1997, In : MRS Bulletin. 22, 2, p. 51-57 7 p.

Research output: Contribution to journalArticle

165 Scopus citations

Direct imaging of impurity-induced Raman scattering in GaN

Ponce, F., Steeds, J. W., Dyer, C. D. & Pitt, G. D., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 731-736 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Environment about indium in G 1-xIn xN from in Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., 1997, Journal De Physique. IV : JP. 2 Part 2 ed. Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., Apr 1997, Journal De Physique. IV : JP. 2 ed. Editions de Physique, Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

Microstructure of InGaN quantum wells

Ponce, F., Cherns, D., Goetz, W. & Kern, R. S., 1997, Materials Research Society Symposium - Proceedings. Phillpot, S. R., Bristowe, P. D., Stroud, D. G. & Smith, J. R. (eds.). MRS, Vol. 482. p. 453-458 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Nanopipes and inversion domains in high-quality GaN epitaxial layers

Ponce, F., Young, W. T., Cherns, D., Steeds, J. W. & Nakamura, S., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 405-410 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

20 Scopus citations

Nitride-based semiconductors for blue and green light-emitting devices

Ponce, F. A. & Bour, D. P., Mar 27 1997, In : Nature. 386, 6623, p. 351-359 9 p.

Research output: Contribution to journalReview article

1196 Scopus citations

Nitride-based semiconductors for blue and green light-emitting devices

Ponce, F. A. & Bour, D. P., Jan 1 1997, In : Nature. 386, 6623, p. 8 1 p.

Research output: Contribution to journalArticle

176 Scopus citations

Observation of coreless dislocations in α-GaN

Cherns, D., Young, W. T., Steeds, J. W., Ponce, F. A. & Nakamura, S., Jun 1997, In : Journal of Crystal Growth. 178, 1-2, p. 201-206 6 p.

Research output: Contribution to journalArticle

85 Scopus citations

Thermal stability of Pt, Pd, Ni on GaN

Duxstad, K. J., Haller, E. E., Yu, K. M., Hirsch, M. T., Imler, W. R., Steigerwald, D. A., Ponce, F. & Romano, L. T., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 1049-1054 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations
1996

Applications of electron microscopy in collaborative industrial research

Ross, F. M., Krishnan, K. M., Thangaraj, N., Farrow, R. F. C., Marks, R. F., Cebollada, A., Parkin, S. S. P., Toney, M. F., Huffman, M., Paz De Araujo, C. A., McMillan, L. D., Cuchiaro, J., Scott, M. C., Echer, C., Ponce, F., O'Keefe, M. A. & Nelson, E. G., May 1996, In : MRS Bulletin. 21, 5, p. 17-23 7 p.

Research output: Contribution to journalArticle

10 Scopus citations

Atomic arrangement at the AlN/SiC interface

Ponce, F., Van de Walle, C. & Northrup, J., Jan 1 1996, In : Physical Review B - Condensed Matter and Materials Physics. 53, 11, p. 7473-7478 6 p.

Research output: Contribution to journalArticle

70 Scopus citations

Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

Ponce, F. A., Cherns, D., Young, W. T. & Steeds, J. W., Aug 5 1996, In : Applied Physics Letters. 69, 6, p. 770-772 3 p.

Research output: Contribution to journalArticle

176 Scopus citations

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

Ponce, F. A., Bour, D. P., Young, W. T., Saunders, M. & Steeds, J. W., Jul 15 1996, In : Applied Physics Letters. 69, 3, p. 337-339 3 p.

Research output: Contribution to journalArticle

228 Scopus citations

Direct imaging of impurity-induced Raman scattering in GaN

Ponce, F. A., Steeds, J. W., Dyer, C. D. & Pitt, G. D., Oct 28 1996, In : Applied Physics Letters. 69, 18, p. 2650-2652 3 p.

Research output: Contribution to journalArticle

58 Scopus citations

High-quality III-V nitrides grown by metalorganic chemical vapor deposition

Dupuis, R. D., Holmes, A. L., Grudowski, P. A., Fertitta, K. G. & Ponce, F., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 395. p. 183-188 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

Ponce, F. A., Bour, D. P., Götz, W., Johnson, N. M., Helava, H. I., Grzegory, I., Jun, J. & Porowski, S., Dec 1 1996, In : Applied Physics Letters. 68, 7, p. 917-919 3 p.

Research output: Contribution to journalArticle

98 Scopus citations

Spatial distribution of the luminescence in GaN thin films

Ponce, F. A., Bour, D. P., Götz, W. & Wright, P. J., Dec 1 1996, In : Applied Physics Letters. 68, 1, p. 57-59 3 p.

Research output: Contribution to journalArticle

327 Scopus citations

Transmission electron microscopy of the AlN-SiC interface

Ponce, F. A., O’Keefe, M. A. & Nelson, E. C., Sep 1996, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 74, 3, p. 777-789 13 p.

Research output: Contribution to journalArticle

5 Scopus citations
1995

High dislocation densities in high efficiency GaN-based light-emitting diodes

Lester, S. D., Ponce, F. A., Craford, M. G. & Steigerwald, D. A., Dec 1 1995, In : Applied Physics Letters. 1 p.

Research output: Contribution to journalArticle

891 Scopus citations

High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Fertitta, K. G., Holmes, A. L., Ciuba, F. J., Dupuis, R. D. & Ponce, F. A., Apr 1 1995, In : Journal of Electronic Materials. 24, 4, p. 257-261 5 p.

Research output: Contribution to journalArticle

20 Scopus citations

Microstructure of GaN epitaxy on SiC using AlN buffer layers

Ponce, F. A., Krusor, B. S., Major, J. S., Plano, W. E. & Welch, D. F., Dec 1 1995, In : Applied Physics Letters. 67, 1 p.

Research output: Contribution to journalArticle

186 Scopus citations
1994

C - outgrowths in C + thin films of LiNbO 3 on Al 2O 3-c

Kingston, J. J., Fork, D. K., Leplingard, F. & Ponce, F., 1994, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 341. p. 289-294 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers

Ponce, F. A., Major, J. S., Plano, W. E. & Welch, D. F., Dec 1 1994, In : Applied Physics Letters. 65, 18, p. 2302-2304 3 p.

Research output: Contribution to journalArticle

115 Scopus citations

Defect generation and suppression during the impurity-induced layer disordering of quantum-sized GaAs/GaInP layers

Thornton, R. L., Bour, D. P., Treat, D., Ponce, F. A., Tramontana, J. C. & Endicott, F. J., Dec 1 1994, In : Applied Physics Letters. 65, 21, p. 2696-2698 3 p.

Research output: Contribution to journalArticle

2 Scopus citations

Self-limiting oxidation for fabricating sub-5 nm silicon nanowires

Liu, H. I., Biegelsen, D. K., Ponce, F. A., Johnson, N. M. & Pease, R. F. W., Dec 1 1994, In : Applied Physics Letters. 64, 11, p. 1383-1385 3 p.

Research output: Contribution to journalArticle

260 Scopus citations

Strained Gaxln1-xP/(AIGa)0.5In0.5P Heterostructures and Quantum-Well Laser Diodes

Bour, D. P., Treat, D. W., Paoli, T. L., Ponce, F., Thornton, R. L., Krusor, B. S. & Bringans, R. D., Feb 1994, In : IEEE Journal of Quantum Electronics. 30, 2, p. 593-607 15 p.

Research output: Contribution to journalArticle

107 Scopus citations
1993

Critical thickness determination of InAs, InP and GaP on GaAs by X-ray interference effect and transmission electron microscopy

Mazuelas, A., González, L., Ponce, F. A., Tapfer, L. & Briones, F., Aug 1993, In : Journal of Crystal Growth. 131, 3-4, p. 465-469 5 p.

Research output: Contribution to journalArticle

16 Scopus citations

Defect generation and suppression during the impurity induced layer disordering of quantum sized GaAs/GaInP layers

Thornton, R. L., Bour, D. P., Treat, D., Ponce, F. A., Tramontana, J. C. & Endicott, F. J., Dec 1 1993, Evolution of Surface and Thin Film Microstructure. Atwater, H. A., Chason, E., Grabow, M. H. & Lagally, M. G. (eds.). Publ by Materials Research Society, p. 445-448 4 p. (Materials Research Society Symposium Proceedings; vol. 280).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition

Nashimoto, K., Fork, D. K., Ponce, F. A. & Tramontana, J. C., Sep 1993, In : Japanese Journal of Applied Physics. 32, 9, p. 4099-4102 4 p.

Research output: Contribution to journalArticle

60 Scopus citations

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

Molina, S. I., Aragón, G., González, Y., González, L., Briones, F., Ponce, F. A. & García, R., Jan 1993, In : Materials Letters. 15, 5-6, p. 353-355 3 p.

Research output: Contribution to journalArticle

Silicon quantum wires oxidation and transport studies

Liu, H. I., Biegelsen, D. K., Johnson, N. M., Ponce, F. A., Maluf, N. I. & Pease, R. F. W., Jan 1 1993, Materials Research Society Symposium Proceedings. Publ by Materials Research Society, p. 57-63 7 p. (Materials Research Society Symposium Proceedings; vol. 283).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Strain and defect generation during interdiffusion of GaAs into Al 0.5In0.5P

Thornton, R. L., Ponce, F. A., Anderson, G. B. & Endicott, F. J., Dec 1 1993, In : Applied Physics Letters. 62, 17, p. 2060-2062 3 p.

Research output: Contribution to journalArticle

1 Scopus citations

Structural characterization of gaas/gap superlattices

Mazuelas, A., Ruizt, A., Ponce, F. & Briones, F., Apr 14 1993, In : Journal of Physics D: Applied Physics. 26, 4, p. A167-A172

Research output: Contribution to journalArticle

4 Scopus citations
1992

Effect of interface chemistry on the growth of ZnSe on the Si(100) surface

Bringans, R. D., Biegelsen, D. K., Swartz, L. E., Ponce, F. A. & Tramontana, J. C., Jan 1 1992, In : Physical Review B. 45, 23, p. 13400-13406 7 p.

Research output: Contribution to journalArticle

52 Scopus citations

Thermal donor formation and annihilation in oxygen-implanted float-zone silicon

Hahn, S., Stein, H. J., Shatas, S. C. & Ponce, F. A., Dec 1 1992, In : Journal of Applied Physics. 72, 5, p. 1758-1765 8 p.

Research output: Contribution to journalArticle

9 Scopus citations

Use of ZnSe as an interlayer for GaAs growth on Si

Bringans, R. D., Biegelsen, D. K., Swartz, L. E., Ponce, F. A. & Tramontana, J. C., Dec 1 1992, In : Applied Physics Letters. 61, 2, p. 195-197 3 p.

Research output: Contribution to journalArticle

24 Scopus citations
1991

Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

Fork, D. K., Ponce, F. A., Tramontana, J. C. & Geballe, T. H., Dec 1 1991, In : Applied Physics Letters. 58, 20, p. 2294-2296 3 p.

Research output: Contribution to journalArticle

238 Scopus citations

High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

Fork, D. K., Ponce, F. A., Tramontana, J. C., Newman, N., Phillips, J. M. & Geballe, T. H., Dec 1 1991, In : Applied Physics Letters. 58, 21, p. 2432-2434 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Hydrogen in crystalline semiconductors. A review of experimental results

Johnson, N. M., Doland, C., Ponce, F., Walker, J. & Anderson, G., Apr 1991, In : Physica B: Physics of Condensed Matter. 170, 1-4, p. 3-20 18 p.

Research output: Contribution to journalArticle

92 Scopus citations