• 11204 Citations
  • 49 h-Index
1976 …2021
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Research Output 1976 2020

2006
aluminum nitrides
power conditioning
high electron mobility transistors
transmitters
aircraft
31 Citations (Scopus)

Misfit dislocation generation in InGaN epilayers on free-standing GaN

Liu, R., Mei, J., Srinivasan, S., Omiya, H., Ponce, F., Cherns, D., Narukawa, Y. & Mukai, T., Jun 2 2006, In : Japanese Journal of Applied Physics, Part 2: Letters. 45, 20-23

Research output: Contribution to journalArticle

Epilayers
Dislocations (crystals)
Burgers vector
Defects
defects

Optical properties of GaN nanowhiskers produced by photoelectrochemical etching

Geiss, R., Ng, H. M., Chowdhury, A., Sergent, A. M., Srinivasan, S. & Ponce, F., 2006, ECS Transactions. 5 ed. Vol. 3. p. 415-419 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nanowhiskers
Cathodoluminescence
Etching
Optical properties
Excitons
70 Citations (Scopus)

Prismatic stacking faults in epitaxially laterally overgrown GaN

Mei, J., Srinivasan, S., Liu, R., Ponce, F., Narukawa, Y. & Mukai, T., Apr 3 2006, In : Applied Physics Letters. 88, 14, 141912.

Research output: Contribution to journalArticle

crystal defects
cathodoluminescence
light emission
flat surfaces
electron microscopy
64 Citations (Scopus)

Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates

Chen, Z., Qhalid Fareed, R. S., Gaevski, M., Adivarahan, V., Yang, J. W., Khan, A., Mei, J. & Ponce, F., 2006, In : Applied Physics Letters. 89, 8, 081905.

Research output: Contribution to journalArticle

aluminum nitrides
sapphire
cathodoluminescence
wings
coalescing
11 Citations (Scopus)

Structure and luminescence of nanocrystalline gallium nitride synthesized by a novel polymer pyrolysis route

Garcia, R., Hirata, G. A., Thomas, A. C. & Ponce, F., Oct 2006, In : Optical Materials. 29, 1, p. 19-23 5 p.

Research output: Contribution to journalArticle

Gallium nitride
gallium nitrides
Powders
pyrolysis
Luminescence
2005
2 Citations (Scopus)

A novel method to synthesize blue-luminescent doped GaN powders

Garcia, R., Thomas, A., Bell, A. & Ponce, F., 2005, Materials Research Society Symposium Proceedings. Ashok, S., Chevallier, J., Sopori, B. L., Tabe, M. & Kiesel, P. (eds.). Vol. 864. p. 277-281 5 p. E6.10

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Powders
Cathodoluminescence
Crystallites
Photoluminescence
Gallium alloys

CBED study of grain misorientations in AlGaN epilayers

Sahonta, S. L., Cherns, D., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Apr 2005, In : Ultramicroscopy. 103, 1, p. 23-32 10 p.

Research output: Contribution to journalArticle

Epilayers
misalignment
wings
Electron diffraction
Seed
2 Citations (Scopus)

Crystal structure of low-resistance Au-Ni/p-GaN contacts

Omiya, H., Srinivasan, S., Ponce, F., Tanaka, S., Marui, H. & Mukai, T., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 421-422 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

low resistance
crystal structure
transmission electron microscopy
wetting
electric contacts
3 Citations (Scopus)

Deep gireenn emissnion at 570nm from InGaN/GaN MQW active region growm on bulk AIN substrate

Shahedipour-Sandvik, F., Grandusky, J. R., Jamil, M., Jindal, V., Schujman, S. B., Schowalter, L. J., Liu, R., Ponce, F., Cheung, M. & Cartwright, A., 2005, Proceedings of SPIE - The International Society for Optical Engineering. Ferguson, I. T., Carrano, J. C., Taguchi, T. & Ashdown, I. E. (eds.). Vol. 5941. p. 1-8 8 p. 594107

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
quantum wells
Photoluminescence
Substrates
photoluminescence
1 Citation (Scopus)

Electrostatic fields and compositional fluctuations in InGaN quantum wells

Stevens, M., Bell, A., Marui, H., Tanaka, S. & Ponce, F., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 213-214 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

quantum wells
electric fields
holography
electrons
tomography
2 Citations (Scopus)

Epitaxial growth of ZrB 2(0001) on Si(111) for III-nitride applications: A review

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Chizmeshya, A., Hu, C. W., Bell, A., Ponce, F. & Tsong, I. S. T., Feb 2005, In : Chinese Journal of Physics. 43, 1 II, p. 233-248 16 p.

Research output: Contribution to journalArticle

nitrides
nucleation
epitaxy
thermal decomposition
metalorganic chemical vapor deposition
45 Citations (Scopus)

Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Sun, W. H., Zhang, J. P., Yang, J. W., Maruska, H. P., Khan, M. A., Liu, R. & Ponce, F., 2005, In : Applied Physics Letters. 87, 21, p. 1-3 3 p., 211915.

Research output: Contribution to journalArticle

atomic layer epitaxy
fine structure
high resolution
screws
periodic variations
15 Citations (Scopus)

Growth of InN on Ge substrate by molecular beam epitaxy

Trybus, E., Namkoong, G., Henderson, W., Doolittle, W. A., Liu, R., Mei, J., Ponce, F., Cheung, M., Chen, F., Furis, M. & Cartwright, A., Jun 1 2005, In : Journal of Crystal Growth. 279, 3-4, p. 311-315 5 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
molecular beam epitaxy
Germanium
Transmission electron microscopy
transmission electron microscopy
10 Citations (Scopus)

Influence of stacking faults on the properties of GaN-based UV light-emitting diodes grown on non-polar substrates

Chen, C. Q., Adivarahan, V., Shatalov, M., Gaevski, M. E., Kuokstis, E., Yang, J. W., Maruska, H. P., Gong, Z., Khan, M. A., Liu, R., Bell, A. & Ponce, F., 2005, Physica Status Solidi C: Conferences. 7 ed. Vol. 2. p. 2732-2735 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

crystal defects
light emitting diodes
wings
defects
cathodoluminescence

Light emission from GaN microcrystals

Garcia, R., Bell, A., Thomas, A. C. & Ponce, F., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 863-864 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

microcrystals
crystallites
light emission
platelets
wurtzite

Localization versus carrier-screening effects in InGaN quantum wells - A time-resolved cathodoluminescence study

Bell, A., Christen, J., Bertram, F., Stevens, M., Ponce, F., Marui, H. & Tanaka, S., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 301-302 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

cathodoluminescence
indium
screening
quantum wells
decay
314 Citations (Scopus)

Luminescence from stacking faults in gallium nitride

Liu, R., Bell, A., Ponce, F., Chen, C. Q., Yang, J. W. & Khan, M. A., Jan 10 2005, In : Applied Physics Letters. 86, 2, 021908.

Research output: Contribution to journalArticle

gallium nitrides
crystal defects
luminescence
cathodoluminescence
light emission
24 Citations (Scopus)

Optoelectronic and microstructure attributes of epitaxial SrTi O3 on Si

Myhajlenko, S., Bell, A., Ponce, F., Edwards, J. L., Wei, Y., Craigo, B., Convey, D., Li, H., Liu, R. & Kulik, J., Jan 1 2005, In : Journal of Applied Physics. 97, 1, 014101.

Research output: Contribution to journalArticle

cathodoluminescence
microstructure
transmission electron microscopy
striation
defects
44 Citations (Scopus)

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

Srinivasan, S., Stevens, M., Ponce, F. & Mukai, T., Sep 26 2005, In : Applied Physics Letters. 87, 13, p. 1-3 3 p., 131911.

Research output: Contribution to journalArticle

light emission
flat surfaces
quantum wells
cathodoluminescence
visible spectrum
semiconductor lasers
quantum wells
thick films
refractivity

Strain relaxation mechanisms in InGaN epilayers

Liu, R., Mei, J., Ponce, F., Narukawa, Y., Omiya, H. & Mukai, T., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 215-216 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

edge dislocations
inclination
heterojunctions
propagation

The electronic nature of metal/p-GaN junctions

Srinivasan, S., Omiya, H., Ponce, F., Tanaka, S., Marui, H. & Mukai, T., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 279-280 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

electronics
metals
matrices
electron beams
scanning electron microscopy

The nature of crystalline defects in a-plane GaN films

Liu, R., Bell, A., D'Costa, V. R., Ponce, F., Chen, C. Q., Yang, J. W. & Khan, M. A., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 217-218 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

crystal defects
defects
cathodoluminescence
epitaxy
flat surfaces
2004
30 Citations (Scopus)

Atomic arrangement at the Au/p-GaN interface in low-resistance contacts

Omiya, H., Ponce, F., Marui, H., Tanaka, S. & Mukai, T., Dec 20 2004, In : Applied Physics Letters. 85, 25, p. 6143-6145 3 p.

Research output: Contribution to journalArticle

low resistance
transmission electron microscopy
platelets
annealing
high resolution

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S. & Cherns, D., Sep 2004, In : Physica Status Solidi (A) Applied Research. 201, 12, p. 2679-2685 7 p.

Research output: Contribution to journalArticle

Ultraviolet radiation
Ultraviolet devices
emitters
Diodes
light emitting diodes
25 Citations (Scopus)

Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Amano, H., Miyazaki, A., Iida, K., Kawashima, T., Iwaya, M., Kamiyama, S., Akasaki, I., Liu, R., Bell, A., Ponce, F., Sahonta, S. & Cherns, D., 2004, Physica Status Solidi C: Conferences. 10 ed. Vol. 1. p. 2679-2685 7 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ultraviolet radiation
emitters
fabrication
defects
light emitting diodes
27 Citations (Scopus)

Effect of layer thickness on the electrostatic potential in InGaN quantum wells

Stevens, M., Bell, A., McCartney, M., Ponce, F., Marui, H. & Tanaka, S., Nov 15 2004, In : Applied Physics Letters. 85, 20, p. 4651-4653 3 p.

Research output: Contribution to journalArticle

holography
field strength
quantum wells
electrostatics
indium
22 Citations (Scopus)

Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Bell, A., Ponce, F., Tsong, I. S. T., Kottke, M. L. & Chen, Z. D., May 3 2004, In : Applied Physics Letters. 84, 18, p. 3510-3512 3 p.

Research output: Contribution to journalArticle

buffers
vapor deposition
sapphire
temperature
125 Citations (Scopus)

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F., Christen, J., Tanaka, S., Fujioka, A. & Nakagawa, Y., May 1 2004, In : Journal of Applied Physics. 95, 9, p. 4670-4674 5 p.

Research output: Contribution to journalArticle

excitons
temperature dependence
cathodoluminescence
luminescence
shift
31 Citations (Scopus)

Localization versus field effects in single InGaN quantum wells

Bell, A., Christen, J., Bertram, F., Ponce, F., Marui, H. & Tanaka, S., Jan 5 2004, In : Applied Physics Letters. 84, 1, p. 58-60 3 p.

Research output: Contribution to journalArticle

quantum wells
quasi-steady states
Stark effect
cathodoluminescence
pulses
Powders
Magnesium
Luminescent devices
Phosphors
gallium nitride
Silicon
Powders
Luminescent devices
Phosphors
gallium nitride
4 Citations (Scopus)

Nitrogen surfactant effects in GaInP

Chapman, D. C., Stringfellow, G. B., Bell, A., Ponce, F., Lee, J. W., Seong, T. Y., Shibakawa, S. & Sasaki, A., Dec 15 2004, In : Journal of Applied Physics. 96, 12, p. 7229-7234 6 p., 6.

Research output: Contribution to journalArticle

pyramids
cathodoluminescence
surfactants
nitrogen
photoluminescence
15 Citations (Scopus)

Raman line shape of the A 1 longitudinal optical phonon in GaN

Shi, L., Ponce, F. & Menendez, J., May 3 2004, In : Applied Physics Letters. 84, 18, p. 3471-3473 3 p.

Research output: Contribution to journalArticle

line shape
optics
high resolution
2 Citations (Scopus)

Self-assembled indium nitride nanocolumns grown by molecular beam epitaxy

Ng, H. M., Liu, R. & Ponce, F., 2004, Proceedings - Electrochemical Society. Ng, H. M. & Baca, A. G. (eds.). Vol. 6. p. 372-379 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Molecular beam epitaxy
Nitrides
Indium
Optical properties
Sapphire
13 Citations (Scopus)

Spatial variation of luminescence from AIGaN grown by facet controlled epitaxial lateral overgrowth

Bell, A., Liu, R., Parasuraman, U. K., Ponce, F., Kamiyama, S., Amano, H. & Akasaki, I., Oct 18 2004, In : Applied Physics Letters. 85, 16, p. 3417-3419 3 p.

Research output: Contribution to journalArticle

flat surfaces
luminescence
aluminum
cathodoluminescence
slip
10 Citations (Scopus)

The generation of misfit dislocations in facet-controlled growth of AlGaNGaN films

Cherns, D., Sahonta, S. L., Liu, R., Ponce, F., Amano, H. & Akasaki, I., Nov 2004, In : Applied Physics Letters. 85, 21, p. 4923-4925 3 p.

Research output: Contribution to journalArticle

flat surfaces
stress relieving
tensile stress
wings
shear stress
2003
105 Citations (Scopus)

Atomic arrangement at the AIN/Si (111) interface

Liu, R., Ponce, F., Dadgar, A. & Krost, A., Aug 4 2003, In : Applied Physics Letters. 83, 5, p. 860-862 3 p.

Research output: Contribution to journalArticle

electron microscopy
high resolution
96 Citations (Scopus)

Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

Contreras, O., Ponce, F., Christen, J., Dadgar, A. & Krost, A., Dec 16 2003, In : Applied Physics Letters. 81, 25, p. 4712-4714 3 p.

Research output: Contribution to journalArticle

epitaxy
silicon
transmission electron microscopy

Effects of Si-doping on the microstructure of AlGaN/GaN multiple-quantum-well

Liu, R., Ponce, F., Sahonta, S. L., Cherns, D., Amano, H. & Akasaki, I., 2003, Materials Research Society Symposium - Proceedings. Ng, H. M., Wraback, M., Hiramatsu, K. & Grandjean, N. (eds.). Vol. 798. p. 775-780 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
Doping (additives)
Microstructure
Screw dislocations
Silicon

Field effect and localization in InGaN/GaN quantum wells

Bell, A., Ponce, F., Marui, H. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 6-7 2 p. 1239878

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor quantum wells
Organic Chemicals
Aluminum Oxide
Organic chemicals
Sapphire
12 Citations (Scopus)

Gallium-nitride-based devices on silicon

Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., Bimberg, D. & 2 others, Kohn, E. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1940-1949 10 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

gallium nitrides
light emitting diodes
field effect transistors
silicon
output
3 Citations (Scopus)

Glide along non-basal slip planes in InGaN epilayers

Srinivasan, S., Geng, L., Ponce, F., Narukawa, Y. & Tanaka, S., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2440-2443 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epilayers
Dislocations (crystals)
slip
Nucleation
Chemical activation

Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN

Srinivasan, S., Geng, L., Shi, L., Ponce, F., Bertram, F., Christen, J., Narukawa, Y. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 35-36 2 p. 1239893

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Luminescence
Optical properties
Metallorganic chemical vapor deposition
Vacancies
Carrier concentration
28 Citations (Scopus)

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., Kinoshita, H., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 502-507 6 p.

Research output: Contribution to journalArticle

Vapor phase epitaxy
vapor phase epitaxy
Metals
Substrates
metals

Interface atomic arrangement between the nitride semiconductor and silicon

Liu, R., Ponce, F., Dadgar, A. & Krost, A., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 85-86 2 p. 1239917

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epilayers
Nitrides
Semiconductor materials
Silicon
Nucleation
70 Citations (Scopus)

Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire

Bell, A., Liu, R., Ponce, F., Amano, H., Akasaki, I. & Cherns, D., Jan 20 2003, In : Applied Physics Letters. 82, 3, p. 349-351 3 p.

Research output: Contribution to journalArticle

light emission
sapphire
microstructure
defects
surface properties
12 Citations (Scopus)

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Tsuda, M., Watanabe, K., Kamiyama, S., Amano, H., Akasaki, I., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 585-589 5 p.

Research output: Contribution to journalArticle

Gallium nitride
Metallorganic vapor phase epitaxy
Aluminum Oxide
gallium nitrides
Sapphire
113 Citations (Scopus)

Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon

Dadgar, A., Strittmatter, A., Bläsing, J., Poschenrieder, M., Contreras, O., Veit, P., Riemann, T., Bertram, F., Reiher, A., Krtschil, A., Diez, A., Hempel, T., Finger, T., Kasic, A., Schubert, M., Bimberg, D., Ponce, F., Christen, J. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1583-1606 24 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

gallium nitrides
vapor phase epitaxy
masking
interlayers
silicon