• 11257 Citations
  • 49 h-Index
1976 …2021

Research output per year

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Research Output

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Conference article
2019

Novel semiconductors for sustainable solar energy technologies

Ponce, F., Mar 14 2019, In : Journal of Physics: Conference Series. 1173, 1, 012001.

Research output: Contribution to journalConference article

Open Access
2014

High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM

Carpenter, R., Xie, H., Lehner, S., Aoki, T., Mardinly, J., Vahidi, M., Newman, N. & Ponce, F., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 70-71 2 p.

Research output: Contribution to journalConference article

1 Scopus citations
2013

Indium nitride and indium gallium nitride layers grown on nanorods

Webster, R. F., Cherns, D., Goff, L. E., Novikov, S. V., Foxon, C. T., Fischer, A. M. & Ponce, F., Jan 1 2013, In : Journal of Physics: Conference Series. 471, 1, 012025.

Research output: Contribution to journalConference article

1 Scopus citations
2011

Microstructure and polarization fields in nitride semiconductors

Ponce, F., Jan 1 2011, In : Journal of Physics: Conference Series. 326, 1, 012001.

Research output: Contribution to journalConference article

4 Scopus citations

Microstructure of nanoscratched semiconductors

Huang, J. Y., Ponce, F., Caldas, P. G., Almeida, C. M. & Prioli, R., Jan 1 2011, In : Journal of Physics: Conference Series. 326, 1, 012061.

Research output: Contribution to journalConference article

2003

MOVPE growth of GaN on Si(1 1 1) substrates

Dadgar, A., Poschenrieder, M., Bläsing, J., Contreras, O., Bertram, F., Riemann, T., Reiher, A., Kunze, M., Daumiller, I., Krtschil, A., Diez, A., Kaluza, A., Modlich, A., Kamp, M., Christen, J., Ponce, F., Kohn, E. & Krost, A., Feb 1 2003, In : Journal of Crystal Growth. 248, SUPPL., p. 556-562 7 p.

Research output: Contribution to journalConference article

120 Scopus citations
2002

Bright, crack-free InGaN/GaN light emitters on Si(111)

Dadgar, A., Poschenrieder, M., Contreras, O., Christen, J., Fehse, K., Bläsing, J., Diez, A., Schulze, F., Riemann, T., Ponce, F. & Krost, A., Aug 1 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 308-313 6 p.

Research output: Contribution to journalConference article

48 Scopus citations

Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

Cai, J. & Ponce, F., Aug 1 2002, In : Physica Status Solidi (A) Applied Research. 192, 2, p. 407-411 5 p.

Research output: Contribution to journalConference article

42 Scopus citations
2000

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

Brillson, L. J., Young, A. P., Levin, T. M., Jessen, G. H., Schäfer, J., Yang, Y., Xu, S. H., Cruguel, H., Lapeyre, G. J., Ponce, F., Naoi, Y., Tu, C., McKenzie, J. D. & Abernathy, C. R., Jun 1 2000, In : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 75, 2-3, p. 218-223 6 p.

Research output: Contribution to journalConference article

7 Scopus citations
1999

Defect formation near GaN surfaces and interfaces

Brillson, L. J., Levin, T. M., Jessen, G. H., Young, A. P., Tu, C., Naoi, Y., Ponce, F., Yang, Y., Lapeyre, G. J., MacKenzie, J. D. & Abernathy, C. R., Dec 15 1999, In : Physica B: Condensed Matter. 273-274, p. 70-74 5 p.

Research output: Contribution to journalConference article

24 Scopus citations
1983

INTERFACE PROPERTIES OF n-ZnSe-p-Ge HETEROJUNCTIONS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION.

Werthen, J. G., Stutius, W. & Ponce, F. A., Jan 1 1983, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1, 3, p. 656-660 5 p.

Research output: Contribution to journalConference article

13 Scopus citations