• 11257 Citations
  • 49 h-Index
1976 …2021

Research output per year

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Research Output

Electron holography studies of the charge on dislocations in GaN

Cherns, D., Jiao, C. G., Mokhtari, H., Cai, J. & Ponce, F., Dec 1 2002, In : Physica Status Solidi (B) Basic Research. 234, 3, p. 924-930 7 p.

Research output: Contribution to journalArticle

40 Scopus citations
9 Scopus citations

Electrostatic fields and compositional fluctuations in InGaN quantum wells

Stevens, M., Bell, A., Marui, H., Tanaka, S. & Ponce, F., Jun 30 2005, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. p. 213-214 2 p. (AIP Conference Proceedings; vol. 772).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights

Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. A. & Collins, D. M., Dec 1 1987, In : Journal of Applied Physics. 61, 11, p. 5159-5169 11 p.

Research output: Contribution to journalArticle

44 Scopus citations

Environment about indium in G 1-xIn xN from in Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., 1997, Journal De Physique. IV : JP. 2 Part 2 ed. Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

Environment about indium in Ga 1-xIn xN from In and Ga K-edge XAFS

Booth, C. H., Bridges, F., Kvitky, Z., Ponce, F. & Romano, L., Apr 1997, Journal De Physique. IV : JP. 2 ed. Editions de Physique, Vol. 7.

Research output: Chapter in Book/Report/Conference proceedingChapter

Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition

Nashimoto, K., Fork, D. K., Ponce, F. A. & Tramontana, J. C., Sep 1993, In : Japanese Journal of Applied Physics. 32, 9, p. 4099-4102 4 p.

Research output: Contribution to journalArticle

60 Scopus citations

Epitaxial growth of Al xGa 1-xN on Si(111) via a ZrB 2(0001) buffer layer

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Bell, A., Ponce, F., Tsong, I. S. T., Kottke, M. L. & Chen, Z. D., May 3 2004, In : Applied Physics Letters. 84, 18, p. 3510-3512 3 p.

Research output: Contribution to journalArticle

22 Scopus citations

Epitaxial growth of ZrB 2(0001) on Si(111) for III-nitride applications: A review

Tolle, J., Kouvetakis, J., Kim, D. W., Mahajan, S., Chizmeshya, A., Hu, C. W., Bell, A., Ponce, F. & Tsong, I. S. T., Feb 1 2005, In : Chinese Journal of Physics. 43, 1 II, p. 233-248 16 p.

Research output: Contribution to journalReview article

2 Scopus citations

Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

Fork, D. K., Ponce, F. A., Tramontana, J. C. & Geballe, T. H., Dec 1 1991, In : Applied Physics Letters. 58, 20, p. 2294-2296 3 p.

Research output: Contribution to journalArticle

238 Scopus citations
Open Access

Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis

Vadiee, E., Fischer, A. M., Clinton, E. A., McFavilen, H., Patadia, A., Arena, C., Ponce, F. A., King, R. R., Honsberg, C. B. & Doolittle, W. A., Jan 1 2019, In : Japanese Journal of Applied Physics. 58, 10, 101003.

Research output: Contribution to journalArticle

Open Access

Evidence of two-dimensional hole gas in p-type AlGaN/AlN/GaN heterostructures

Wei, Q., Wu, Z., Sun, K., Ponce, F., Hertkorn, J. & Scholz, F., Dec 1 2009, In : Applied Physics Express. 2, 12, 121001.

Research output: Contribution to journalArticle

14 Scopus citations

Excimer-laser-induced crystallization of hydrogenated amorphous silicon

Winer, K., Anderson, G. B., Ready, S. E., Bachrach, R. Z., Johnson, R. I., Ponce, F. A. & Boyce, J. B., Dec 1 1990, In : Applied Physics Letters. 57, 21, p. 2222-2224 3 p.

Research output: Contribution to journalArticle

38 Scopus citations

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F., Christen, J., Tanaka, S., Fujioka, A. & Nakagawa, Y., May 1 2004, In : Journal of Applied Physics. 95, 9, p. 4670-4674 5 p.

Research output: Contribution to journalArticle

126 Scopus citations

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

Molina, S. I., Aragón, G., González, Y., González, L., Briones, F., Ponce, F. A. & García, R., Jan 1993, In : Materials Letters. 15, 5-6, p. 353-355 3 p.

Research output: Contribution to journalArticle

Fault-free silicon at the silicon/sapphire interface

Ponce, F. A., Dec 1 1982, In : Applied Physics Letters. 41, 4, p. 371-373 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Field effect and localization in InGaN/GaN quantum wells

Bell, A., Ponce, F., Marui, H. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 6-7 2 p. 1239878

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fine structure of AlN/AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering

Sun, W. H., Zhang, J. P., Yang, J. W., Maruska, H. P., Khan, M. A., Liu, R. & Ponce, F., Nov 25 2005, In : Applied Physics Letters. 87, 21, p. 1-3 3 p., 211915.

Research output: Contribution to journalArticle

45 Scopus citations

Free carrier accumulation at cubic AlGaN/GaN heterojunctions

Wei, Q. Y., Li, T., Huang, J. Y., Ponce, F., Tschumak, E., Zado, A. & As, D. J., Apr 2 2012, In : Applied Physics Letters. 100, 14, 142108.

Research output: Contribution to journalArticle

10 Scopus citations

From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates

Torelly, G., Jakomin, R., Pires, M. P., Dornelas, L. P., Prioli, R., Caldas, P. G., Xie, H., Ponce, F. & Souza, P. L., Oct 13 2015, SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Institute of Electrical and Electronics Engineers Inc., 7298133

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium-nitride-based devices on silicon

Dadgar, A., Poschenrieder, M., Daumiller, I., Kunze, M., Strittmatter, A., Riemann, T., Bertram, F., Bläsing, J., Schulze, F., Reiher, A., Krtschil, A., Contreras, O., Kaluza, A., Modlich, A., Kamp, M., Reißmann, L., Diez, A., Christen, J., Ponce, F., Bimberg, D. & 2 others, Kohn, E. & Krost, A., 2003, Physica Status Solidi C: Conferences. 6 SPEC. ISS. ed. Vol. 0. p. 1940-1949 10 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

12 Scopus citations

GENERATION LIFETIME IMPROVEMENT THROUGH INTRINSIC GETTERING IN N-TYPE LT AN BR 100 RT AN BR Si WAFERS.

Murray, E. M., Scott, M. P., Hahn, S. & Ponce, F., 1983, Proceedings - The Electrochemical Society. Bullis, W. M. & Kimerling, L. C. (eds.). Pennington, NJ, USA: Electrochemical Soc Inc, Vol. 83-9. p. 220-228 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures

Liu, R., Mei, J., Srinivasan, S., Ponce, F., Omiya, H., Narukawa, Y. & Mukai, T., Nov 23 2006, In : Applied Physics Letters. 89, 20, 201911.

Research output: Contribution to journalArticle

53 Scopus citations

Glide along non-basal slip planes in InGaN epilayers

Srinivasan, S., Geng, L., Ponce, F., Narukawa, Y. & Tanaka, S., 2003, Physica Status Solidi C: Conferences. 7 ed. p. 2440-2443 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Graded-thickness samples for molecular beam epitaxial growth studies of GaAs/Si heteroepitaxy

Biegelsen, D. K., Ponce, F. A., Krusor, B. S., Tramontana, J. C. & Yingling, R. D., Dec 1 1988, In : Applied Physics Letters. 52, 21, p. 1779-1781 3 p.

Research output: Contribution to journalArticle

19 Scopus citations

Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

Ji, M. H., Liu, Y. S., Kim, J., Park, Y. J., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Mehta, K., Yoder, P. D., Xie, H., Ponce, F., Sood, A., Dhar, N. & Lewis, J., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD

Ji, M. H., Liu, Y. S., Kim, J., Park, Y. J., Detchprohm, T., Dupuis, R. D., Kao, T. T., Shen, S. C., Mehta, K., Douglas Yoder, P., Xie, H., Ponce, F., Sood, A., Dhar, N. & Lewis, J., 2017, CLEO: Science and Innovations, CLEO_SI 2017. OSA - The Optical Society, Vol. Part F41-CLEO_SI 2017.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN

Srinivasan, S., Geng, L., Shi, L., Ponce, F., Bertram, F., Christen, J., Narukawa, Y. & Tanaka, S., 2003, IEEE International Symposium on Compound Semiconductors, Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2003-January. p. 35-36 2 p. 1239893

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

Garcia, R., Thomas, A. C. & Ponce, F., Jun 1 2008, In : Journal of Crystal Growth. 310, 12, p. 3131-3134 4 p.

Research output: Contribution to journalArticle

6 Scopus citations

Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., Kinoshita, H., Liu, R., Bell, A. & Ponce, F., Jun 30 2003, In : Applied Surface Science. 216, 1-4 SPEC., p. 502-507 6 p.

Research output: Contribution to journalArticle

28 Scopus citations

Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition

Li, X. H., Wang, S., Xie, H., Wei, Y. O., Kao, T. T., Satter, M. M., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Fischer, A. M. & Ponce, F., May 1 2015, In : Physica Status Solidi (B) Basic Research. 252, 5, p. 1089-1095 7 p.

Research output: Contribution to journalArticle

25 Scopus citations

Growth of III-Nitrides

Dupuis, R. D. & Ponce, F., Apr 1 2015, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 4-5, p. 331-333 3 p.

Research output: Contribution to journalArticle

Growth of InAs nanostructures on InP using atomic-force nanolithography

Fonseca Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L. & Ponce, F., Dec 1 2007, In : Applied Physics A: Materials Science and Processing. 89, 4, p. 945-949 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

Growth of InN on Ge substrate by molecular beam epitaxy

Trybus, E., Namkoong, G., Henderson, W., Doolittle, W. A., Liu, R., Mei, J., Ponce, F., Cheung, M., Chen, F., Furis, M. & Cartwright, A., Jun 1 2005, In : Journal of Crystal Growth. 279, 3-4, p. 311-315 5 p.

Research output: Contribution to journalArticle

15 Scopus citations

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Fonseca-Filho, H. D., Almeida, C. M., Prioli, R., Pires, M. P., Souza, P. L., Wu, Z. H., Wei, Q. Y. & Ponce, F., Mar 26 2010, In : Journal of Applied Physics. 107, 5, 054313.

Research output: Contribution to journalArticle

4 Scopus citations

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

Hu, C. W., Bell, A., Ponce, F., Smith, D. & Tsong, I. S. T., Oct 21 2002, In : Applied Physics Letters. 81, 17, p. 3236-3238 3 p.

Research output: Contribution to journalArticle

39 Scopus citations

Growth of single-phase wurtzite BAlN with 7.2%-B contents

Li, X., Wang, S., Liu, H., Ponce, F., Detchprohm, T. & Dupuis, R., Dec 16 2016, 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 7789116

Research output: Chapter in Book/Report/Conference proceedingConference contribution

High critical current densities in epitaxial YBa2Cu 3O7-δ thin films on silicon-on-sapphire

Fork, D. K., Ponce, F. A., Tramontana, J. C., Newman, N., Phillips, J. M. & Geballe, T. H., Dec 1 1991, In : Applied Physics Letters. 58, 21, p. 2432-2434 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

High dislocation densities in high efficiency GaN-based light-emitting diodes

Lester, S. D., Ponce, F. A., Craford, M. G. & Steigerwald, D. A., Dec 1 1995, In : Applied Physics Letters. 1 p.

Research output: Contribution to journalArticle

891 Scopus citations

High energy and spatial resolution EELS band gap measurements using a nion monochromated cold field emission HERMES dedicated STEM

Carpenter, R., Xie, H., Lehner, S., Aoki, T., Mardinly, J., Vahidi, M., Newman, N. & Ponce, F., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 70-71 2 p.

Research output: Contribution to journalConference article

1 Scopus citations

High-field spatial imaging of charge transport in silicon at low temperature

Stanford, C., Moffatt, R. A., Kurinsky, N. A., Brink, P. L., Cabrera, B., Cherry, M., Insulla, F., Kelsey, M., Ponce, F., Sundqvist, K., Yellin, S. & Young, B. A., Feb 1 2020, In : AIP Advances. 10, 2, 025316.

Research output: Contribution to journalArticle

Open Access

Highly conductive modulation doped composition graded p -AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Hertkorn, J., Thapa, S. B., Wunderer, T., Scholz, F., Wu, Z. H., Wei, Q. Y., Ponce, F., Moram, M. A., Humphreys, C. J., Vierheilig, C. & Schwarz, U. T., Jul 24 2009, In : Journal of Applied Physics. 106, 1, 013720.

Research output: Contribution to journalArticle

12 Scopus citations

Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

Fischer, A. M., Wei, Y. O., Ponce, F., Moseley, M., Gunning, B. & Doolittle, W. A., Sep 23 2013, In : Applied Physics Letters. 103, 13, 131101.

Research output: Contribution to journalArticle

23 Scopus citations

High quality a-plane GaN films grown on cone-shaped patterned r-plane sapphire substrates

Sun, Y. Q., Wu, Z. H., Yin, J., Fang, Y. Y., Wang, H., Yu, C. H., Hui, X., Chen, C. Q., Wei, Q. Y., Li, T., Sun, K. W. & Ponce, F., Feb 1 2011, In : Thin Solid Films. 519, 8, p. 2508-2512 5 p.

Research output: Contribution to journalArticle

7 Scopus citations

High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

Fertitta, K. G., Holmes, A. L., Ciuba, F. J., Dupuis, R. D. & Ponce, F. A., Apr 1 1995, In : Journal of Electronic Materials. 24, 4, p. 257-261 5 p.

Research output: Contribution to journalArticle

20 Scopus citations

High-quality III-V nitrides grown by metalorganic chemical vapor deposition

Dupuis, R. D., Holmes, A. L., Grudowski, P. A., Fertitta, K. G. & Ponce, F., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 395. p. 183-188 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for use in the UV-Visible Spectrum

Mehta, K., Detchprohm, T., Park, Y. J., Liu, Y. S., Moreno, O., Alugubelli, S. R., Wang, S., Ponce, F., Shen, S. C., Dupuis, R. D. & Yoder, P. D., Oct 25 2017, (Accepted/In press) In : IEEE Journal of Quantum Electronics.

Research output: Contribution to journalArticle

HIGH RESOLUTION ELECTRON MICROSCOPY OF II-IV COMPOUND SEMICONDUCTORS.

Sinclair, R., Ponce, F. A., Yamashita, T. & Smith, D. J., Dec 1 1983, Institute of Physics Conference Series. 67 ed. Inst of Physics, p. 103-108 6 p. (Institute of Physics Conference Series; no. 67).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

High-resolution lattice imaging of cadmium telluride

Yamashita, T., Ponce, F. A., Pirouz, P. & Sinclair, R., Apr 1982, In : Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 45, 4, p. 693-711 19 p.

Research output: Contribution to journalArticle

16 Scopus citations