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2019

Photochemical synthesis of dendritic silver nano-particles for anti-counterfeiting

Zhao, Z., Chamele, N., Kozicki, M., Yao, Y. & Wang, C., Jan 1 2019, In : Journal of Materials Chemistry C. 7, 20, p. 6099-6104 6 p.

Research output: Contribution to journalArticle

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journalArticle

Structural origins of electronic conduction in amorphous copper-doped alumina

Subedi, K. N., Prasai, K., Kozicki, M. N. & Drabold, D. A., Jun 28 2019, In : Physical Review Materials. 3, 6, 065605.

Research output: Contribution to journalArticle

2018

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

Fang, R., Livingston, I., Esqueda, I. S., Kozicki, M. & Barnaby, H., Jun 14 2018, In : Journal of Applied Physics. 123, 22, 225701.

Research output: Contribution to journalArticle

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. & Holbert, K., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

1 Scopus citations
2017

In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

Taggart, J. L., Chen, W., Gonzalez Velo, Y., Barnaby, H., Holbert, K. & Kozicki, M., Dec 2 2017, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

3 Scopus citations

Low-Temperature Characterization of Cu-Cu: Silica-Based Programmable Metallization Cell

Chen, W., Chamele, N., Gonzalez Velo, Y., Barnaby, H. & Kozicki, M., Sep 1 2017, In : IEEE Electron Device Letters. 38, 9, p. 1244-1247 4 p., 7999163.

Research output: Contribution to journalArticle

7 Scopus citations

Non-volatile memories: Organic memristors come of age

Valov, I. & Kozicki, M., Dec 1 2017, In : Nature Materials. 16, 12, p. 1170-1172 3 p.

Research output: Contribution to journalArticle

11 Scopus citations

Proton Beam Effects on Ge-Se/Ag Thin Films

Nichol, T., Nagy, G., Huszank, R., Tenne, D., Kozicki, M., Barnaby, H., Rajta, I. & Mitkova, M., Jan 1 2017, (Accepted/In press) In : Physica Status Solidi (B) Basic Research.

Research output: Contribution to journalArticle

1 Scopus citations

Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Pacheco, J. L., Bielejec, E. S., McLain, M. L., Chamele, N., Mahmud, A. & Mitkova, M., Aug 1 2017, In : IEEE Transactions on Nuclear Science. 64, 8, p. 2300-2306 7 p., 7847370.

Research output: Contribution to journalArticle

3 Scopus citations

SiO2 based conductive bridging random access memory

Chen, W., Tappertzhofen, S., Barnaby, H. & Kozicki, M., Mar 15 2017, (Accepted/In press) In : Journal of Electroceramics. p. 1-23 23 p.

Research output: Contribution to journalArticle

10 Scopus citations

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Chen, W., Fang, R., Barnaby, H., Balaban, M. B., Gonzalez Velo, Y., Taggart, J. L., Mahmud, A., Holbert, K., Edwards, A. H. & Kozicki, M., Jan 1 2017, In : IEEE Transactions on Nuclear Science. 64, 1, p. 269-276 8 p., 7592933.

Research output: Contribution to journalArticle

9 Scopus citations
2016

A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells

Chen, W., Fang, R., Balaban, M. B., Yu, W., Gonzalez Velo, Y., Barnaby, H. & Kozicki, M., May 12 2016, In : Nanotechnology. 27, 25, 255202.

Research output: Contribution to journalArticle

26 Scopus citations

A Low-Voltage Microfluidic Valve Based upon a Reversible Hydrophobicity Effect

Wang, R., Yu, W., Kozicki, M. & Chae, J., Aug 19 2016, In : Advanced Materials Interfaces. 3, 16, 1600186.

Research output: Contribution to journalArticle

Electron beam effects in Ge–Se thin films and resistance change memory devices

Wolf, K., Ailavajhala, M. S., Tenne, D. A., Barnaby, H., Kozicki, M. & Mitkova, M., Jun 1 2016, In : Emerging Materials Research. 5, 1, p. 126-134 9 p.

Research output: Contribution to journalArticle

3 Scopus citations

Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning

Mahmud, A., Gonzalez Velo, Y., Saremi, M., Barnaby, H., Kozicki, M., Holbert, K., Mitkova, M., Alford, T., Goryll, M., Yu, W., Mahalanabis, D., Chen, W., Chamele, N. & Taggart, J., Jul 18 2016, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

3 Scopus citations

Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer

Chen, W., Barnaby, H. & Kozicki, M., May 1 2016, In : IEEE Electron Device Letters. 37, 5, p. 576-579 4 p., 7433974.

Research output: Contribution to journalArticle

4 Scopus citations

Radiation hardening by process of CBRAM resistance switching cells

Gonzalez Velo, Y., Mahmud, A., Chen, W., Taggart, J. L., Barnaby, H., Kozicki, M., Ailavajhala, M., Holbert, K. & Mitkova, M., Aug 1 2016, In : IEEE Transactions on Nuclear Science. 63, 4, p. 2145-2151 7 p., 7470296.

Research output: Contribution to journalArticle

14 Scopus citations

Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells

Chen, W., Barnaby, H. & Kozicki, M., May 1 2016, In : IEEE Electron Device Letters. 37, 5, p. 580-583 4 p., 7429703.

Research output: Contribution to journalArticle

46 Scopus citations
2015

Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films

Saremi, M., Barnaby, H., Edwards, A. & Kozicki, M., 2015, In : ECS Electrochemistry Letters. 4, 7, p. H29-H31

Research output: Contribution to journalArticle

14 Scopus citations

A nonvolatile sense amplifier flip-flop using programmable metallization cells

Mahalanabis, D., Bharadwaj, V., Barnaby, H., Vrudhula, S. & Kozicki, M., Jun 1 2015, In : IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 5, 2, p. 205-213 9 p., 7113919.

Research output: Contribution to journalArticle

10 Scopus citations

A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells

Chen, W., Barnaby, H., Kozicki, M., Edwards, A. H., Gonzalez Velo, Y., Fang, R., Holbert, K., Yu, S. & Yu, W., Nov 9 2015, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

14 Scopus citations

Reconfigurable memristive device technologies

Edwards, A. H., Barnaby, H., Campbell, K. A., Kozicki, M., Liu, W. & Marinella, M. J., Jul 1 2015, In : Proceedings of the IEEE. 103, 7, p. 1004-1033 30 p., 7128486.

Research output: Contribution to journalArticle

34 Scopus citations

Reversible migration of silver on memorized pathways in Ag-Ge<inf>40</inf>S<inf>60</inf> films

Orava, J., Kozicki, M., Yannopoulos, S. N. & Greer, A. L., Jul 1 2015, In : AIP Advances. 5, 7, 077134.

Research output: Contribution to journalArticle

4 Scopus citations

Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays

Mahalanabis, D., Liu, R., Barnaby, H., Yu, S., Kozicki, M., Mahmud, A. & Deionno, E., Nov 9 2015, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

9 Scopus citations

Static impedance behavior of programmable metallization cells

Rajabi, S., Saremi, M., Barnaby, H., Edwards, A., Kozicki, M., Mitkova, M., Mahalanabis, D., Gonzalez Velo, Y. & Mahmud, A., 2015, In : Solid-State Electronics. 106, p. 27-33 7 p.

Research output: Contribution to journalArticle

20 Scopus citations

X-ray radiation induced effects in selected chalcogenide glasses and CBRAM devices based on them

Mitkova, M., Wolf, K., Belev, G., Ailavajhala, M., Tenne, D. A., Barnaby, H. & Kozicki, M., 2015, (Accepted/In press) In : Physica Status Solidi (B) Basic Research.

Research output: Contribution to journalArticle

4 Scopus citations

Flexible sensors based on radiation-induced diffusion of ag in chalcogenide glass

Dandamudi, P., Mahmud, A., Gonzalez Velo, Y., Kozicki, M., Barnaby, H., Roos, B., Alford, T., Ailavajhala, M., Mitkova, M. & Holbert, K., Dec 1 2014, In : IEEE Transactions on Nuclear Science. 61, 6, p. 3432-3437 6 p., 6949157.

Research output: Contribution to journalArticle

7 Scopus citations

Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films

Ailavajhala, M. S., Gonzalez Velo, Y., Poweleit, C., Barnaby, H., Kozicki, M., Holbert, K., Butt, D. P. & Mitkova, M., 2014, In : Applied Physics Letters. 104, 25, 043502.

Research output: Contribution to journalArticle

9 Scopus citations

Impedance measurement and characterization of Ag-Ge30Se70-based programmable metallization cells

Mahalanabis, D., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Dandamudi, P. & Vrudhula, S., Nov 1 2014, In : IEEE Transactions on Electron Devices. 61, 11, p. 3723-3730 8 p., 6912973.

Research output: Contribution to journalArticle

11 Scopus citations

Incremental resistance programming of programmable metallization cells for use as electronic synapses

Mahalanabis, D., Barnaby, H., Gonzalez Velo, Y., Kozicki, M., Vrudhula, S. & Dandamudi, P., 2014, In : Solid-State Electronics. 100, p. 39-44 6 p.

Research output: Contribution to journalArticle

28 Scopus citations

Investigation of single event induced soft errors in programmable metallization cell memory

Mahalanabis, D., Barnaby, H., Kozicki, M., Bharadwaj, V. & Rajabi, S., Dec 1 2014, In : IEEE Transactions on Nuclear Science. 61, 6, p. 3557-3563 7 p., 6935043.

Research output: Contribution to journalArticle

11 Scopus citations

Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells

Taggart, J. L., Gonzalez Velo, Y., Mahalanabis, D., Mahmud, A., Barnaby, H., Kozicki, M., Holbert, K., Mitkova, M., Wolf, K., Deionno, E. & White, A. L., Dec 1 2014, In : IEEE Transactions on Nuclear Science. 61, 6, p. 2985-2990 6 p., 6939742.

Research output: Contribution to journalArticle

20 Scopus citations

New functionality of chalcogenide glasses for radiation sensing of nuclear wastes

Ailavajhala, M. S., Gonzalez Velo, Y., Poweleit, C. D., Barnaby, H., Kozicki, M., Butt, D. P. & Mitkova, M., Mar 30 2014, In : Journal of Hazardous Materials. 269, p. 68-73 6 p.

Research output: Contribution to journalArticle

8 Scopus citations

Structural and material changes in thin film chalcogenide glasses under Ar-Ion irradiation

Nichol, T., Latif, M. R., Ailavajhala, M. S., Tenne, D. A., Gonzalez Velo, Y., Barnaby, H., Kozicki, M. & Mitkova, M., Dec 1 2014, In : IEEE Transactions on Nuclear Science. 61, 6, p. 2855-2861 7 p., 6966815.

Research output: Contribution to journalArticle

2 Scopus citations

Thin Ge-Se films as a sensing material for radiation doses

Ailavajhala, M. S., Nichol, T., Gonzalez Velo, Y., Poweleit, C. D., Barnaby, H., Kozicki, M., Butt, D. P. & Mitkova, M., 2014, In : Physica Status Solidi (B) Basic Research. 251, 7, p. 1347-1353 7 p.

Research output: Contribution to journalArticle

4 Scopus citations
41 Scopus citations

Total ionizing dose retention capability of conductive bridging random access memory

Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Gopalan, C. & Holbert, K., Feb 2014, In : IEEE Electron Device Letters. 35, 2, p. 205-207 3 p., 6704284.

Research output: Contribution to journalArticle

30 Scopus citations

Total ionizing dose tolerance of Ag - Ge40S60 based programmable metallization cells

Dandamudi, P., Kozicki, M., Barnaby, H., Gonzalez Velo, Y. & Holbert, K., 2014, In : IEEE Transactions on Nuclear Science. 61, 4, p. 1726-1731 6 p., 6762812.

Research output: Contribution to journalArticle

15 Scopus citations
2013

Cation-based resistance change memory

Valov, I. & Kozicki, M., Feb 20 2013, In : Journal of Physics D: Applied Physics. 46, 8, 074005.

Research output: Contribution to journalArticle

127 Scopus citations

Sensors based on radiation-induced diffusion of silver in Germanium selenide glasses

Dandamudi, P., Kozicki, M., Barnaby, H., Gonzalez Velo, Y., Mitkova, M., Holbert, K., Ailavajhala, M. & Yu, W., Dec 2013, In : IEEE Transactions on Nuclear Science. 60, 6, p. 4257-4264 8 p., 6663709.

Research output: Contribution to journalArticle

12 Scopus citations

Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells

Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Dandamudi, P., Chandran, A., Holbert, K., Mitkova, M. & Ailavajhala, M., Dec 2013, In : IEEE Transactions on Nuclear Science. 60, 6, p. 4563-4569 7 p., 6678245.

Research output: Contribution to journalArticle

30 Scopus citations
2012

Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures

Gonzalez Velo, Y., Barnaby, H., Chandran, A., Oleksy, D. R., Dandamudi, P., Kozicki, M., Holbert, K., Mitkova, M., Ailavajhala, M. & Chen, P., 2012, In : IEEE Transactions on Nuclear Science. 59, 6, p. 3093-3100 8 p., 6365396.

Research output: Contribution to journalArticle

15 Scopus citations

Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells

Jameson, J. R., Gilbert, N., Koushan, F., Saenz, J., Wang, J., Hollmer, S. & Kozicki, M., Jan 9 2012, In : Applied Physics Letters. 100, 2, 023505.

Research output: Contribution to journalArticle

18 Scopus citations

Electrochemical metallization cells-blending nanoionics into nanoelectronics?

Lu, W., Jeong, D. S., Kozicki, M. & Waser, R., Feb 2012, In : MRS Bulletin. 37, 2, p. 124-130 7 p.

Research output: Contribution to journalArticle

76 Scopus citations

Materials Research Society Symposium Proceedings: Preface

Fujisaki, Y., Dimitrakis, P., Tokumitsu, E. & Kozicki, M., 2012, In : Unknown Journal. 1430

Research output: Contribution to journalArticle

Quantized conductance in Ag/GeS 2/W conductive-bridge memory cells

Jameson, J. R., Gilbert, N., Koushan, F., Saenz, J., Wang, J., Hollmer, S., Kozicki, M. & Derhacobian, N., Feb 2012, In : IEEE Electron Device Letters. 33, 2, p. 257-259 3 p., 6122486.

Research output: Contribution to journalArticle

66 Scopus citations