Michael Kozicki

Professor

Professor, IAFSE-SEMTE: Materials Science and Engineering
Professor, IAFSE-ECEE: Electrical Engineering
Professor, Nano-Electronics, Arizona Institute of (AINE)
Professor, Electrical, Computer, and Energy Engineering, School of (ECEE)
Professor, Knowledge Enterprise Development, Office of (OKED)

4192 Citations
29 h-Index

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Research Output 1900 2019

4192 Citations
29 h-Index
118 Article
43 Conference contribution
27 Patent
3 Comment/debate
2 More
- 2 Review article

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Ambrosi, E., Bartlett, P., Berg, A. I., Brivio, S., Burr, G., Deswal, S., Deuermeier, J., Haga, M. A., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S. & 18 othersIelmini, D., Kenyon, A. J., Kolosov, V., Li, Y., Majumdar, S., Milano, G., Prodromakis, T., Raeishosseini, N., Rana, V., Ricciardi, C., Santamaria, M., Shluger, A., Valov, I., Waser, R., Stanley Williams, R., Wouters, D., Yang, Y. & Zaffora, A., Jan 1 2019, In : Faraday Discussions. 213, p. 115-120 6 p.

Research output: Contribution to journal › Comment/debate

Metallizing

Experiments

RRAM

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., Jan 1 2019, In : Faraday Discussions. 213, p. 53-66 14 p.

Research output: Contribution to journal › Article

Crystallization

Metallizing

crystallization

Radiation

dosage

Phase-change memories (PCM)-Experiments and modelling: General discussion

Bartlett, P., Berg, A. I., Bernasconi, M., Brown, S., Burr, G., Foroutan-Nejad, C., Gale, E., Huang, R., Ielmini, D., Kissling, G., Kolosov, V., Kozicki, M., Nakamura, H., Rushchanskii, K., Salinga, M., Shluger, A., Thompson, D., Valov, I., Wang, W., Waser, R. & 1 othersWilliams, R. S., Jan 1 2019, In : Faraday Discussions. 213, p. 393-420 28 p.

Research output: Contribution to journal › Comment/debate

Phase change memory

Experiments

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journal › Article

High electron mobility transistors

Field effect transistors

Oxides

Transistors

Management information systems

Synaptic and neuromorphic functions: General discussion

Berg, A. I., Brivio, S., Brown, S., Burr, G., Deswal, S., Deuermeier, J., Gale, E., Hwang, H., Ielmini, D., Indiveri, G., Kenyon, A. J., Kiazadeh, A., Köymen, I., Kozicki, M., Li, Y., Mannion, D., Prodromakis, T., Ricciardi, C., Siegel, S., Speckbacher, M. & 5 othersValov, I., Wang, W., Williams, R. S., Wouters, D. & Yang, Y., Jan 1 2019, In : Faraday Discussions. 213, p. 553-578 26 p.

Research output: Contribution to journal › Comment/debate