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  • 6 Similar Profiles
Metallizing Engineering & Materials Science
Data storage equipment Engineering & Materials Science
Solid electrolytes Engineering & Materials Science
Silver Engineering & Materials Science
Glass Engineering & Materials Science
cells Physics & Astronomy
random access memory Physics & Astronomy
dosage Physics & Astronomy

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Research Output 1900 2019

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Ambrosi, E., Bartlett, P., Berg, A. I., Brivio, S., Burr, G., Deswal, S., Deuermeier, J., Haga, M. A., Kiazadeh, A., Kissling, G., Kozicki, M., Foroutan-Nejad, C., Gale, E., Gonzalez Velo, Y., Goossens, A., Goux, L., Hasegawa, T., Hilgenkamp, H., Huang, R., Ibrahim, S. & 18 othersIelmini, D., Kenyon, A. J., Kolosov, V., Li, Y., Majumdar, S., Milano, G., Prodromakis, T., Raeishosseini, N., Rana, V., Ricciardi, C., Santamaria, M., Shluger, A., Valov, I., Waser, R., Stanley Williams, R., Wouters, D., Yang, Y. & Zaffora, A., Jan 1 2019, In : Faraday Discussions. 213, p. 115-120 6 p.

Research output: Contribution to journalComment/debate

Metallizing
Experiments
RRAM
Crystallization
Metallizing
crystallization
Radiation
dosage

Phase-change memories (PCM)-Experiments and modelling: General discussion

Bartlett, P., Berg, A. I., Bernasconi, M., Brown, S., Burr, G., Foroutan-Nejad, C., Gale, E., Huang, R., Ielmini, D., Kissling, G., Kolosov, V., Kozicki, M., Nakamura, H., Rushchanskii, K., Salinga, M., Shluger, A., Thompson, D., Valov, I., Wang, W., Waser, R. & 1 othersWilliams, R. S., Jan 1 2019, In : Faraday Discussions. 213, p. 393-420 28 p.

Research output: Contribution to journalComment/debate

Phase change memory
Experiments

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journalArticle

High electron mobility transistors
Field effect transistors
Oxides
Transistors
Management information systems

Synaptic and neuromorphic functions: General discussion

Berg, A. I., Brivio, S., Brown, S., Burr, G., Deswal, S., Deuermeier, J., Gale, E., Hwang, H., Ielmini, D., Indiveri, G., Kenyon, A. J., Kiazadeh, A., Köymen, I., Kozicki, M., Li, Y., Mannion, D., Prodromakis, T., Ricciardi, C., Siegel, S., Speckbacher, M. & 5 othersValov, I., Wang, W., Williams, R. S., Wouters, D. & Yang, Y., Jan 1 2019, In : Faraday Discussions. 213, p. 553-578 26 p.

Research output: Contribution to journalComment/debate

Projects 1987 2020