Real-time monitoring of semiconductor growth by spectroscopic ellipsometry

Engineering & Materials Science

• Semiconductor growth 100%
• Spectroscopic ellipsometry 91%
• Monitoring 28%
• Epitaxial growth 17%
• Metallorganic chemical vapor deposition 9%
• Molecular beam epitaxy 9%
• Buffer layers 8%
• Thickness measurement 8%
• Chemical analysis 8%
• Uncertainty 7%
• Heterojunction bipolar transistors 7%
• X rays 5%
• Wavelength 5%
• Surface roughness 5%
• Detectors 4%
• Substrates 4%
• Temperature 2%

Chemical Compounds

• Ellipsometry 55%
• Semiconductor 38%
• Surface Temperature 9%
• Epitaxial Growth 8%
• Surface Roughness 7%
• Wavelength 5%
• Buffer Solution 4%
• Surface 2%

Physics & Astronomy

• ellipsometry 49%
• barrier layers 6%
• surface temperature 6%
• accumulators 6%
• metalorganic chemical vapor deposition 5%
• surface roughness 5%
• buffers 5%
• methodology 5%
• incidence 5%
• oscillations 3%
• shift 3%
• detectors 3%
• wavelengths 2%
• x rays 2%