Real-time monitoring of semiconductor growth by spectroscopic ellipsometry

B. Johs, J. Hale, C. Herzinger, D. Doctor, K. Elliott, G. Olson, D. Chow, J. Roth, I. Ferguson, M. Pelczynski, C. H. Kuo, Shane Johnson

Research output: Contribution to journalConference article

13 Citations (Scopus)

Abstract

in situ Spectroscopic Ellipsometry (SE) is an optical technique which is well suited for the monitoring of epitaxial semiconductor growth, due to its high surface sensitivity and non-invasive nature. In this work, SE systems were installed on both MBE and MOCVD deposition systems to monitor the epitaxial growth of InxGa1-xAs and InxAl1-xAs compounds on InP substrates. The structures grown include thick lattice matched In0.53Ga0.47As buffer layers (for HBT collectors), and strained RTD structures. SE was used to monitor in real-time layer composition and thickness during growth. To enhance the precision and accuracy of the SE determined growth parameters, it was necessary to optimize the SE data analysis strategies. A methodology to determine the best spectral region for the SE data analysis in the presence of noise and systematic effects (such as angle of incidence uncertainty, detector wavelength shifts, surface roughness, uncertainty in surface temperature, non-ideal growth mods, etc.) is presented. Using the optimized data analysis strategies, long term SE-determined InxGa1-xAs composition accuracy (as verified by ex situ x-ray measurements) of ±0.002 in 'x' was achieved. SE thickness measurements of ultra-thin (<30 angstrom) strained AlAs barrier layers were also in excellent agreement (±0.5 angstrom) with real-time photo-emission oscillation measurements.

Original languageEnglish (US)
Pages (from-to)3-14
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Volume502
StatePublished - Jan 1 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 30 1997Dec 3 1997

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Semiconductor growth
Spectroscopic ellipsometry
ellipsometry
Monitoring
Epitaxial growth
Thickness measurement
Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Buffer layers
barrier layers
Chemical analysis
Molecular beam epitaxy
accumulators
surface temperature
metalorganic chemical vapor deposition
surface roughness
buffers
incidence
Surface roughness
methodology

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Real-time monitoring of semiconductor growth by spectroscopic ellipsometry. / Johs, B.; Hale, J.; Herzinger, C.; Doctor, D.; Elliott, K.; Olson, G.; Chow, D.; Roth, J.; Ferguson, I.; Pelczynski, M.; Kuo, C. H.; Johnson, Shane.

In: Materials Research Society Symposium - Proceedings, Vol. 502, 01.01.1998, p. 3-14.

Research output: Contribution to journalConference article

Johs, B, Hale, J, Herzinger, C, Doctor, D, Elliott, K, Olson, G, Chow, D, Roth, J, Ferguson, I, Pelczynski, M, Kuo, CH & Johnson, S 1998, 'Real-time monitoring of semiconductor growth by spectroscopic ellipsometry', Materials Research Society Symposium - Proceedings, vol. 502, pp. 3-14.
Johs B, Hale J, Herzinger C, Doctor D, Elliott K, Olson G et al. Real-time monitoring of semiconductor growth by spectroscopic ellipsometry. Materials Research Society Symposium - Proceedings. 1998 Jan 1;502:3-14.
Johs, B. ; Hale, J. ; Herzinger, C. ; Doctor, D. ; Elliott, K. ; Olson, G. ; Chow, D. ; Roth, J. ; Ferguson, I. ; Pelczynski, M. ; Kuo, C. H. ; Johnson, Shane. / Real-time monitoring of semiconductor growth by spectroscopic ellipsometry. In: Materials Research Society Symposium - Proceedings. 1998 ; Vol. 502. pp. 3-14.
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AU - Hale, J.

AU - Herzinger, C.

AU - Doctor, D.

AU - Elliott, K.

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AU - Chow, D.

AU - Roth, J.

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