• 2224 Citations
  • 24 h-Index
1992 …2021

Research output per year

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Research Output

Article

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Webster, P. T., Riordan, N. A., Liu, S., Steenbergen, E. H., Synowicki, R. A., Zhang, Y-H. & Johnson, S., Feb 9 2015, In : Applied Physics Letters. 106, 6, 061907.

Research output: Contribution to journalArticle

6 Scopus citations

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Li, H., Liu, S., Cellek, O. O., Ding, D., Shen, X. M., Steenbergen, E. H., Fan, J., Lin, Z., He, Z. Y., Zhang, Q., Webster, P. T., Johnson, S., Ouyang, L., Smith, D. & Zhang, Y-H., Jan 1 2013, In : Journal of Crystal Growth. 378, p. 145-149 5 p.

Research output: Contribution to journalArticle

5 Scopus citations

Anomalous LO phonon lifetime in AlAs

Canonico, M., Poweleit, C., Menendez, J., Debernardi, A., Johnson, S. & Zhang, Y-H., May 27 2002, In : Physical Review Letters. 88, 21, p. 2155021-2155024 4 p., 215502.

Research output: Contribution to journalArticle

15 Scopus citations

A semi-analytical model for semiconductor solar cells

Ding, D., Johnson, S., Yu, S. Q., Wu, S. N. & Zhang, Y-H., Dec 15 2011, In : Journal of Applied Physics. 110, 12, 123104.

Research output: Contribution to journalArticle

38 Scopus citations

Auger losses in dilute InAsBi

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., May 7 2018, In : Applied Physics Letters. 112, 19, 192106.

Research output: Contribution to journalArticle

2 Scopus citations

Band edge alignment of pseudomorphic GaAs1-ySby on GaAs

Wang, J. B., Johnson, S., Chaparro, S. A., Ding, D., Cao, Y., Sadofyev, Y. G., Zhang, Y-H., Gupta, J. A. & Guo, C. Z., Nov 1 2004, In : Physical Review B - Condensed Matter and Materials Physics. 70, 19, p. 1-8 8 p., 195339.

Research output: Contribution to journalArticle

50 Scopus citations

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy

Webster, P. T., Shalindar, A. J., Schaefer, S. T. & Johnson, S., Aug 21 2017, In : Applied Physics Letters. 111, 8, 082104.

Research output: Contribution to journalArticle

5 Scopus citations

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Fan, D., Zeng, Z., Dorogan, V. G., Hirono, Y., Li, C., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M. & Salamo, G. J., Jan 1 2013, In : Journal of Materials Science: Materials in Electronics. 24, 5, p. 1635-1639 5 p.

Research output: Contribution to journalArticle

10 Scopus citations

Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells

Chernikov, A., Bornwasser, V., Koch, M., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Chatterjee, S., Aug 1 2012, In : Semiconductor Science and Technology. 27, 8, 085012.

Research output: Contribution to journalArticle

1 Scopus citations

Carrier recombination in 1.3 μm GaAsSb/GaAs quantum well lasers

Hild, K., Sweeney, S. J., Wright, S., Lock, D. A., Jin, S. R., Marko, I. P., Johnson, S., Chaparro, S. A., Yu, S. Q. & Zhang, Y-H., Nov 6 2006, In : Applied Physics Letters. 89, 17, 173509.

Research output: Contribution to journalArticle

18 Scopus citations

Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Shakfa, M. K., Chernikov, A., Kalincev, D., Chatterjee, S., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Koch, M., Sep 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 9, p. 1234-1237 4 p.

Research output: Contribution to journalArticle

4 Scopus citations

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume, G., Hild, K., Marko, I. P., Hosea, T. J. C., Yu, S. Q., Chaparro, S. A., Samal, N., Johnson, S., Zhang, Y-H. & Sweeney, S. J., Aug 1 2012, In : Journal of Applied Physics. 112, 3, 033108.

Research output: Contribution to journalArticle

5 Scopus citations

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Li, J. J., Liu, X., Liu, S., Wang, S., Smith, D., Ding, D., Johnson, S., Furdyna, J. K. & Zhang, Y-H., Mar 19 2012, In : Applied Physics Letters. 100, 12, 121908.

Research output: Contribution to journalArticle

3 Scopus citations
3 Scopus citations

Clustering effects in Ga(AsBi)

Imhof, S., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Kolata, K., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Rubel, O., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131115.

Research output: Contribution to journalArticle

106 Scopus citations

Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

Aleshkin, V. Y., Gavrilenko, V. I., Ikonnikov, A. V., Sadofyev, Y. G., Bird, J. P., Johnson, S. & Zhang, Y-H., Sep 6 2005, In : Fizika i Tekhnika Poluprovodnikov. 39, 1, p. 71-75 5 p.

Research output: Contribution to journalArticle

3 Scopus citations

Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells

Aleshkin, V. Y., Gavrilenko, V. I., Ikonnikov, A. V., Sadofyev, Y. G., Bird, J. P., Johnson, S. & Zhang, Y-H., Mar 4 2005, In : Semiconductors. 39, 1, p. 62-66 5 p.

Research output: Contribution to journalArticle

12 Scopus citations

Defect states in red-emitting InxAl1-xAs quantum dots

Leon, R., Ibáñez, J., Marcinkevičius, S., Siegert, J., Paskova, T., Monemar, B., Chaparro, S., Navarro, C., Johnson, S. & Zhang, Y-H., Aug 15 2002, In : Physical Review B - Condensed Matter and Materials Physics. 66, 8, p. 853311-853317 7 p., 085331.

Research output: Contribution to journalArticle

1 Scopus citations

Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

Wang, J. B., Ding, D., Johnson, S., Yu, S. Q. & Zhang, Y-H., Aug 1 2007, In : Physica Status Solidi (B) Basic Research. 244, 8, p. 2740-2751 12 p.

Research output: Contribution to journalArticle

30 Scopus citations

Diffuse optical reflectivity measurements on GaAs during molecular-beam epitaxy processing

Lavoie, C., Johnson, S. R., Mackenzie, J. A., Tiedje, T. & van Buuren, T., Jul 1992, In : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 10, 4, p. 930-933 4 p.

Research output: Contribution to journalArticle

17 Scopus citations

Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties

Leon, R., Chaparro, S., Johnson, S., Navarro, C., Jin, X., Zhang, Y-H., Siegert, J., Marcinkevičius, S., Liao, X. Z. & Zou, J., May 1 2002, In : Journal of Applied Physics. 91, 9, p. 5826-5830 5 p.

Research output: Contribution to journalArticle

35 Scopus citations

Disorder and the Urbach edge in dilute bismide GaAsBi

Gogineni, C., Riordan, N. A., Johnson, S., Lu, X. & Tiedje, T., Jul 22 2013, In : Applied Physics Letters. 103, 4, 041110.

Research output: Contribution to journalArticle

35 Scopus citations

Dispersion and lifetimes of electromagnetic modes attached to strongly textured slab waveguides

Pacradouni, V., Mandeville, W. J., Cowan, A. R., Young, J. F. & Johnson, S., Jan 1 2002, In : Optical and Quantum Electronics. 34, 1-3, p. 161-169 9 p.

Research output: Contribution to journalArticle

5 Scopus citations

Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application

Borkovska, L., Yefanov, O., Gudymenko, O., Johnson, S., Kladko, V., Korsunska, N., Kryshtab, T., Sadofyev, Y. & Zhang, Y-H., Oct 25 2006, In : Thin Solid Films. 515, 2 SPEC. ISS., p. 786-789 4 p.

Research output: Contribution to journalArticle

4 Scopus citations

Effect of substrate thickness, back surface texture, reflectivity, and thin film interference on optical band-gap thermometry

Johnson, S. & Tiedje, T., May 1997, In : Journal of Crystal Growth. 175-176, PART 1, p. 273-280 8 p.

Research output: Contribution to journalArticle

21 Scopus citations

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Tiedje, T. & Salamo, G. J., Feb 13 2013, In : Journal of Physics D: Applied Physics. 46, 6, 065306.

Research output: Contribution to journalArticle

26 Scopus citations

Evidence of two disorder scales in Ga(AsBi)

Imhof, S., Wagner, C., Chernikov, A., Koch, M., Kolata, K., Köster, N. S., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Rubel, O. & Thränhardt, A., Apr 1 2011, In : Physica Status Solidi (B) Basic Research. 248, 4, p. 851-854 4 p.

Research output: Contribution to journalArticle

14 Scopus citations
28 Scopus citations

Extended band anti-crossing model for dilute bismides

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., Feb 5 2018, In : Applied Physics Letters. 112, 6, 062103.

Research output: Contribution to journalArticle

5 Scopus citations

Four-junction solar cells using lattice-matched II-VI and HI-V semiconductors

Wu, S. N., Ding, D., Johnson, S., Yu, S. Q. & Zhang, Y-H., Aug 1 2010, In : Progress in Photovoltaics: Research and Applications. 18, 5, p. 328-333 6 p.

Research output: Contribution to journalArticle

19 Scopus citations
7 Scopus citations

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Yu, S. Q., Cao, Y., Johnson, S., Zhang, Y. H. & Huang, Y. Z., Feb 8 2008, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26, 1, p. 56-61 6 p.

Research output: Contribution to journalArticle

Generation of 1-ps infrared pulses at 10.6 μm by use of low-temperature-grown GaAs as an optical semiconductor switch

Elezzabi, A. Y., Meyer, J., Hughes, M. K. Y. & Johnson, S. R., Jun 1994, In : Optics Letters. 19, 12, p. 898-900 3 p.

Research output: Contribution to journalArticle

29 Scopus citations

High performance GaAsSb/GaAs quantum well lasers

Yu, S. Q., Ding, D., Wang, J. B., Samal, N., Jin, X., Cao, Y., Johnson, S. & Zhang, Y-H., Sep 28 2007, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 5, p. 1658-1663 6 p.

Research output: Contribution to journalArticle

8 Scopus citations

High-power single-mode vertical-cavity surface-emitting lasers

Samal, N., Johnson, S., Ding, D., Samal, A. K., Yu, S. Q. & Zhang, Y-H., Oct 17 2005, In : Applied Physics Letters. 87, 16, p. 1-3 3 p., 161108.

Research output: Contribution to journalArticle

11 Scopus citations

Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S., Wang, J. B. & Zhang, Y-H., May 1 2008, In : Applied Physics Letters. 92, 16, 161101.

Research output: Contribution to journalArticle

3 Scopus citations

Impact of electronic density of states on electroluminescence refrigeration

Yu, S. Q., Wang, J. B., Ding, D., Johnson, S., Vasileska, D. & Zhang, Y-H., Oct 2007, In : Solid-State Electronics. 51, 10 SPEC. ISS, p. 1387-1390 4 p.

Research output: Contribution to journalArticle

9 Scopus citations

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Liu, S., Li, H., Cellek, O. O., Ding, D., Shen, X. M., Lin, Z. Y., Steenbergen, E. H., Fan, J., He, Z. Y., Lu, J., Johnson, S., Smith, D. & Zhang, Y-H., Feb 18 2013, In : Applied Physics Letters. 102, 7, 071903.

Research output: Contribution to journalArticle

8 Scopus citations

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 m GaAsSb/GaAs vertical cavity surface emitting lasers

Hild, K., Marko, I. P., Johnson, S., Yu, S. Q., Zhang, Y-H. & Sweeney, S. J., Aug 15 2011, In : Applied Physics Letters. 99, 7, 071110.

Research output: Contribution to journalArticle

8 Scopus citations

Influence of photon recycling on semiconductor luminescence refrigeration

Wang, J. B., Johnson, S., Ding, D., Yu, S. Q. & Zhang, Y-H., Sep 11 2006, In : Journal of Applied Physics. 100, 4, 043502.

Research output: Contribution to journalArticle

27 Scopus citations

In situ temperature control of molecular beam epitaxy growth using band-edge thermometry

Johnson, S., Kuo, C. H., Boonzaayer, M., Braun, W., Koelle, U., Zhang, Y-H. & Roth, J., May 1 1998, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1502-1506 5 p.

Research output: Contribution to journalArticle

17 Scopus citations

Investigation of defect structure of InGaNAsSb/GaAs quantum wells

Borkovska, L., Korsunska, N., Kladko, V., Kryshtab, T., Kushnirenko, V., Slobodyan, M., Yefanov, O., Venger, Y., Johnson, S., Sadofyev, Y. & Zhang, Y-H., Sep 1 2007, In : Materials Science and Engineering C. 27, 5-8 SPEC. ISS., p. 1038-1042 5 p.

Research output: Contribution to journalArticle

3 Scopus citations
14 Scopus citations

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

Sadofyev, Y. G., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S. & Zhang, Y-H., Sep 2 2002, In : Applied Physics Letters. 81, 10, p. 1833-1835 3 p.

Research output: Contribution to journalArticle

41 Scopus citations

Large negative persistent photoconductivity in InAs/AlSb quantum wells

Sadofyev, Y. G., Ramamoorthy, A., Bird, J. P., Johnson, S. & Zhang, Y-H., May 9 2005, In : Applied Physics Letters. 86, 19, p. 1-3 3 p., 192109.

Research output: Contribution to journalArticle

10 Scopus citations

Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs

Dowd, P., Braun, W., Smith, D., Ryu, C. M., Guo, C. Z., Chen, S. L., Koelle, U., Johnson, S. & Zhang, Y-H., Aug 30 1999, In : Applied Physics Letters. 75, 9, p. 1267-1269 3 p.

Research output: Contribution to journalArticle

35 Scopus citations

Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications

Dowd, P., Johnson, S., Feld, S. A., Adamcyk, M., Chaparro, S. A., Joseph, J., Hilgers, K., Horning, M. P., Shiralagi, K. & Zhang, Y-H., Jun 25 2003, In : Electronics Letters. 39, 13, p. 987-988 2 p.

Research output: Contribution to journalArticle

44 Scopus citations

Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs

Johnson, S., Dowd, P., Braun, W., Koelle, U., Ryu, C. M., Beaudoin, M., Guo, C. Z. & Zhang, Y-H., May 1 2000, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18, 3, p. 1545-1548 4 p.

Research output: Contribution to journalArticle

5 Scopus citations

Luminescence dynamics in Ga(AsBi)

Imhof, S., Wagner, C., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Chatterjee, S., Koch, S. W., Rubel, O., Lu, X., Johnson, S., Beaton, D. A. & Tiedje, T., Apr 18 2011, In : Applied Physics Letters. 98, 16, 161104.

Research output: Contribution to journalArticle

22 Scopus citations

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Fan, D., Grant, P. C., Yu, S. Q., Dorogan, V. G., Hu, X., Zeng, Z., Li, C., Hawkridge, M. E., Benamara, M., Mazur, Y. I., Salamo, G. J., Johnson, S. & Wang, Z. M., May 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C105.

Research output: Contribution to journalArticle

19 Scopus citations