• 2194 Citations
  • 24 h-Index
1992 …2021
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Research Output 1992 2019

2019
1 Citation (Scopus)

Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

Kosireddy, R. R., Schaefer, S. T., Shalindar, A. J. & Johnson, S., Sep 7 2019, In : Journal of Applied Physics. 126, 9, 095108.

Research output: Contribution to journalArticle

molecular beam epitaxy
overpressure
microstructure
chemical properties
backscattering
1 Citation (Scopus)

Molecular beam epitaxy growth and optical properties of InAsSbBi

Schaefer, S. T., Kosireddy, R. R., Webster, P. T. & Johnson, S., Aug 28 2019, In : Journal of Applied Physics. 126, 8, 083101.

Research output: Contribution to journalArticle

Open Access
molecular beam epitaxy
optical properties
temperature
bismuth
quantum wells
2018

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., Webster, P. T., Lassise, M. B., Johnson, S., Holman, Z. & Zhang, Y-H., May 25 2018, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heterojunctions
Solar cells
Indium
Photoluminescence
Energy gap
2 Citations (Scopus)

Auger losses in dilute InAsBi

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., May 7 2018, In : Applied Physics Letters. 112, 19, 192106.

Research output: Contribution to journalArticle

orbits
eigenvectors
retarding
density functional theory
coefficients

Evaluation of Dilute Bismide Materials for Mid-IR Applications

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., Oct 30 2018, 26th International Semiconductor Laser Conference, ISLC 2018. Institute of Electrical and Electronics Engineers Inc., Vol. 2018-September. p. 183-184 2 p. 8516227

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wavelength
evaluation
wavelengths
admixtures
Semiconductor quantum wells
5 Citations (Scopus)

Extended band anti-crossing model for dilute bismides

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., Feb 5 2018, In : Applied Physics Letters. 112, 6, 062103.

Research output: Contribution to journalArticle

quantum wells
density functional theory
absorption spectra
photoluminescence
1 Citation (Scopus)

Optical quality in strain-balanced InAs/InAsSb superlattices grown with and without Bi surfactant

Webster, P. T., Schaefer, S. T., Steenbergen, E. H. & Johnson, S., Jan 1 2018, Quantum Sensing and Nano Electronics and Photonics XV. Leo, G., Brown, G. J., Razeghi, M. & Lewis, J. S. (eds.). SPIE, Vol. 10540. 105401E

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superlattices
Surfactant
Surface-Active Agents
Photoluminescence
superlattices
2017
5 Citations (Scopus)

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy

Webster, P. T., Shalindar, A. J., Schaefer, S. T. & Johnson, S., Aug 21 2017, In : Applied Physics Letters. 111, 8, 082104.

Research output: Contribution to journalArticle

molecular beam epitaxy
ellipsometry
backscattering
diffraction
high energy electrons
2016
1 Citation (Scopus)

1.7 eV MgCdTe double-heterostructure solar cells for tandem device applications

Campbell, C. M., Zhao, Y., Suarez, E., Boccard, M., Zhao, X. H., He, Z. Y., Webster, P. T., Lassise, M. B., Johnson, S., Holman, Z. & Zhang, Y-H., Nov 18 2016, 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-November. p. 411-414 4 p. 7749622

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Heterojunctions
Solar cells
Indium
Photoluminescence
Energy gap
6 Citations (Scopus)

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction

Shalindar, A. J., Webster, P. T., Wilkens, B. J., Alford, T. & Johnson, S., Oct 14 2016, In : Journal of Applied Physics. 120, 14, 145704.

Research output: Contribution to journalArticle

backscattering
diffraction
spectroscopy
x rays
sidebands
1 Citation (Scopus)

Microscopic modelling of opto-electronic properties of dilute bismide materials for the mid-IR

Hader, J., Moloney, J. V., Rubel, O., Badescu, S. C., Johnson, S. & Koch, S. W., Jan 1 2016, Novel In-Plane Semiconductor Lasers XV. Belyanin, A. A. & Smowton, P. M. (eds.). SPIE, Vol. 9767. 976709

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mid-infrared
Electronic Properties
Optoelectronics
Electronic properties
Bismuth
11 Citations (Scopus)

Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

Webster, P. T., Shalindar, A. J., Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R. & Johnson, S., Jun 14 2016, In : Journal of Applied Physics. 119, 22, 225701.

Research output: Contribution to journalArticle

superlattices
optical properties
ellipsometry
absorptivity
molecular beam epitaxy
2015
6 Citations (Scopus)

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Webster, P. T., Riordan, N. A., Liu, S., Steenbergen, E. H., Synowicki, R. A., Zhang, Y-H. & Johnson, S., Feb 9 2015, In : Applied Physics Letters. 106, 6, 061907.

Research output: Contribution to journalArticle

ellipsometry
superlattices
absorptivity
ground state
room temperature
14 Citations (Scopus)
Superlattices
Molecular beam epitaxy
superlattices
Transmission electron microscopy
transmission electron microscopy
26 Citations (Scopus)

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Webster, P. T., Riordan, N. A., Liu, S., Steenbergen, E. H., Synowicki, R. A., Zhang, Y-H. & Johnson, S., Dec 28 2015, In : Journal of Applied Physics. 118, 24, 245706.

Research output: Contribution to journalArticle

ellipsometry
photoluminescence
spectroscopy
superlattices
diffraction
2014
15 Citations (Scopus)

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Webster, P. T., Riordan, N. A., Gogineni, C., Liu, S., Lu, J., Zhao, X. H., Smith, D., Zhang, Y-H. & Johnson, S., 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 02C120.

Research output: Contribution to journalArticle

Bismuth
Superlattices
Molecular beam epitaxy
Surface-Active Agents
bismuth
11 Citations (Scopus)

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Grant, P. C., Fan, D., Mosleh, A., Yu, S. Q., Dorogan, V. G., Hawkridge, M. E., Mazur, Y. I., Benamara, M., Salamo, G. J. & Johnson, S., Jan 1 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 02C119.

Research output: Contribution to journalArticle

Rapid thermal annealing
Molecular beam epitaxy
Semiconductor quantum wells
molecular beam epitaxy
quantum wells
2013
5 Citations (Scopus)

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Li, H., Liu, S., Cellek, O. O., Ding, D., Shen, X. M., Steenbergen, E. H., Fan, J., Lin, Z., He, Z. Y., Zhang, Q., Webster, P. T., Johnson, S., Ouyang, L., Smith, D. & Zhang, Y-H., 2013, In : Journal of Crystal Growth. 378, p. 145-149 5 p.

Research output: Contribution to journalArticle

Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Calibration
6 Citations (Scopus)

Bismuth-containing III-V semiconductors: Epitaxial growth and physical properties

Batool, Z., Chatterjee, S., Chernikov, A., Duzik, A., Fritz, R., Gogineni, C., Hild, K., Hosea, T. J. C., Imhof, S., Johnson, S., Jiang, Z., Jin, S., Koch, M., Koch, S. W., Kolata, K., Lewis, R. B., Lu, X., Masnadi-Shirazi, M., Millunchick, J. M., Mooney, P. M. & 7 others, Riordan, N. A., Rubel, O., Sweeney, S. J., Thomas, J. C., Thränhardt, A., Tiedje, T. & Volz, K., Aug 29 2013, Molecular Beam Epitaxy. Elsevier Inc., p. 139-158 20 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Semiconductor growth
Bismuth
Epitaxial growth
Physical properties
III-V semiconductors
10 Citations (Scopus)

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Fan, D., Zeng, Z., Dorogan, V. G., Hirono, Y., Li, C., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M. & Salamo, G. J., Jan 1 2013, In : Journal of Materials Science: Materials in Electronics. 24, 5, p. 1635-1639 5 p.

Research output: Contribution to journalArticle

Quantum Dots
Bismuth
Molecular beam epitaxy
Surface-Active Agents
bismuth
3 Citations (Scopus)

Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Shakfa, M. K., Chernikov, A., Kalincev, D., Chatterjee, S., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Koch, M., Sep 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 9, p. 1234-1237 4 p.

Research output: Contribution to journalArticle

quantum wells
photoluminescence
excitation
blue shift
quenching
35 Citations (Scopus)

Disorder and the Urbach edge in dilute bismide GaAsBi

Gogineni, C., Riordan, N. A., Johnson, S., Lu, X. & Tiedje, T., Jul 22 2013, In : Applied Physics Letters. 103, 4, 041110.

Research output: Contribution to journalArticle

disorders
sublattices
temperature
quantum wells
pumps
26 Citations (Scopus)

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Tiedje, T. & Salamo, G. J., Feb 13 2013, In : Journal of Physics D: Applied Physics. 46, 6, 065306.

Research output: Contribution to journalArticle

Heterojunctions
Photoluminescence
Optical properties
disorders
photoluminescence
8 Citations (Scopus)

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Liu, S., Li, H., Cellek, O. O., Ding, D., Shen, X. M., Lin, Z. Y., Steenbergen, E. H., Fan, J., He, Z. Y., Lu, J., Johnson, S., Smith, D. & Zhang, Y-H., Feb 18 2013, In : Applied Physics Letters. 102, 7, 071903.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
optical properties
photoluminescence
temperature
18 Citations (Scopus)

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Fan, D., Grant, P. C., Yu, S. Q., Dorogan, V. G., Hu, X., Zeng, Z., Li, C., Hawkridge, M. E., Benamara, M., Mazur, Y. I., Salamo, G. J., Johnson, S. & Wang, Z. M., Jan 1 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C105.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Semiconductor quantum wells
Heterojunctions
quantum wells
interruption
26 Citations (Scopus)

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Shakfa, M. K., Kalincev, D., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Chernikov, A., Chatterjee, S. & Koch, M., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 164306.

Research output: Contribution to journalArticle

quantum wells
optoelectronic devices
continuous radiation
tendencies
photoluminescence
16 Citations (Scopus)

Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

Mazur, Y. I., Dorogan, V. G., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Ware, M. E., Yu, S. Q., Tiedje, T. & Salamo, G. J., Apr 14 2013, In : Journal of Applied Physics. 113, 14, 144308.

Research output: Contribution to journalArticle

line shape
quantum wells
photoluminescence
excitons
excitation
4 Citations (Scopus)

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

Hossain, N., Hild, K., Jin, S. R., Yu, S. Q., Johnson, S., Ding, D., Zhang, Y-H. & Sweeney, S. J., Jan 28 2013, In : Applied Physics Letters. 102, 4, 041106.

Research output: Contribution to journalArticle

quantum well lasers
threshold currents
quantum wells
current density
room temperature
2012
7 Citations (Scopus)

Approaching single-junction theoretical limit using ultra-thin GaAs solar cells with optimal optical designs

Liu, S., Ding, D., Johnson, S. & Zhang, Y-H., 2012, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 2082-2087 6 p. 6318008

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical design
Solar cells
Light reflection
Open circuit voltage
Short circuit currents
1 Citation (Scopus)

Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells

Chernikov, A., Bornwasser, V., Koch, M., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Chatterjee, S., Aug 1 2012, In : Semiconductor Science and Technology. 27, 8, 085012.

Research output: Contribution to journalArticle

Semiconductor quantum wells
quantum wells
Phonon scattering
Photoluminescence
Temperature
5 Citations (Scopus)

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume, G., Hild, K., Marko, I. P., Hosea, T. J. C., Yu, S. Q., Chaparro, S. A., Samal, N., Johnson, S., Zhang, Y-H. & Sweeney, S. J., Aug 2012, In : Journal of Applied Physics. 112, 3, 033108.

Research output: Contribution to journalArticle

laser cavities
alignment
surface emitting lasers
cavities
spectroscopy
3 Citations (Scopus)

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Li, J. J., Liu, X., Liu, S., Wang, S., Smith, D., Ding, D., Johnson, S., Furdyna, J. K. & Zhang, Y-H., Mar 19 2012, In : Applied Physics Letters. 100, 12, 121908.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
photoluminescence
optoelectronic devices
envelopes
5 Citations (Scopus)

InAs/InAsSb Type-II superlattice: A promising material for mid-wavelength and long-wavelength infrared applications

Cellek, O. O., Li, H., Shen, X. M., Lin, Z., Steenbergen, E. H., Ding, D., Liu, S., Zhang, Q., Kim, H. S., Fan, J., Dinezza, M. J., Dettlaff, W. H. G., Webster, P. T., He, Z., Li, J. J., Johnson, S., Smith, D. & Zhang, Y-H., 2012, Proceedings of SPIE - The International Society for Optical Engineering. SPIE, Vol. 8353. 83533F

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superlattices
Photoluminescence
Structural Properties
Structural properties
Infrared
20 Citations (Scopus)

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Fan, D., Zeng, Z., Hu, X., Dorogan, V. G., Li, C., Benamara, M., Hawkridge, M. E., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M. & Salamo, G. J., Oct 29 2012, In : Applied Physics Letters. 101, 18, 181103.

Research output: Contribution to journalArticle

aluminum gallium arsenides
molecular beam epitaxy
temperature profiles
quantum wells
photoluminescence
6 Citations (Scopus)

Optimal optical designs for planar GaAs single-junction solar cells with textured and reflective surfaces

Liu, S., Ding, D., Johnson, S. & Zhang, Y-H., 2012, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8256. 82560M

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical design
Optical Design
Solar Cells
Gallium Arsenide
Solar cells
1 Citation (Scopus)

Photoluminescence studies of type-II CdSe/CdTe superlattices

Li, J. J., Yin, L., Johnson, S., Skromme, B., Wang, S., Liu, X., Ding, D., Ning, C-Z., Furdyna, J. K. & Zhang, Y-H., Aug 6 2012, In : Applied Physics Letters. 101, 6, 061915.

Research output: Contribution to journalArticle

superlattices
photoluminescence
carrier lifetime
Poisson equation
blue shift
18 Citations (Scopus)

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Riordan, N. A., Gogineni, C., Johnson, S., Lu, X., Tiedje, T., Ding, D., Zhang, Y-H., Fritz, R., Kolata, K., Chatterjee, S., Volz, K. & Koch, S. W., Oct 2012, In : Journal of Materials Science: Materials in Electronics. 23, 10, p. 1799-1804 6 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Photoluminescence
Pumps
pumps
photoluminescence
2011
37 Citations (Scopus)

A semi-analytical model for semiconductor solar cells

Ding, D., Johnson, S., Yu, S. Q., Wu, S. N. & Zhang, Y-H., Dec 15 2011, In : Journal of Applied Physics. 110, 12, 123104.

Research output: Contribution to journalArticle

solar cells
slabs
absorptance
planar structures
short circuit currents
14 Citations (Scopus)

Evidence of two disorder scales in Ga(AsBi)

Imhof, S., Wagner, C., Chernikov, A., Koch, M., Kolata, K., Köster, N. S., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Rubel, O. & Thränhardt, A., Apr 1 2011, In : Physica Status Solidi (B) Basic Research. 248, 4, p. 851-854 4 p.

Research output: Contribution to journalArticle

disorders
Experiments
Photoluminescence
photoluminescence
energy
8 Citations (Scopus)

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 m GaAsSb/GaAs vertical cavity surface emitting lasers

Hild, K., Marko, I. P., Johnson, S., Yu, S. Q., Zhang, Y-H. & Sweeney, S. J., Aug 15 2011, In : Applied Physics Letters. 99, 7, 071110.

Research output: Contribution to journalArticle

surface emitting lasers
tuning
threshold currents
temperature dependence
spontaneous emission
22 Citations (Scopus)

Luminescence dynamics in Ga(AsBi)

Imhof, S., Wagner, C., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Chatterjee, S., Koch, S. W., Rubel, O., Lu, X., Johnson, S., Beaton, D. A. & Tiedje, T., Apr 18 2011, In : Applied Physics Letters. 98, 16, 161104.

Research output: Contribution to journalArticle

disorders
luminescence
kinetics
simulation
19 Citations (Scopus)

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Mazur, Y. I., Dorogan, V. G., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Wang, Z. M., Tiedje, T. & Salamo, G. J., Sep 16 2011, In : Nanotechnology. 22, 37, 375703.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Semiconductor quantum wells
Nanostructures
Photoluminescence
Temperature
hemispheres
Light emitting diodes
Luminescence
luminescence
Semiconductor materials
1 Citation (Scopus)

Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

Samal, N., Sadofyev, Y. G., Annamalai, S., Chen, L., Samal, A. & Johnson, S., May 15 2011, In : Journal of Crystal Growth. 323, 1, p. 477-479 3 p.

Research output: Contribution to journalArticle

Quantum cascade lasers
quantum cascade lasers
Aluminum
aluminum gallium arsenides
Tuning
2010

A semi-analytical model and characterization techniques for concentrated photovoltaic multijunction solar cells

Zhang, Y-H., Ding, D., Johnson, S. & Lim, S. H., 2010, Optics InfoBase Conference Papers.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Analytical models
Energy gap
solar cells
Spontaneous emission
Quantum efficiency
7 Citations (Scopus)

A semi-analytical model for semiconductor solar cells: From detailed balance to practical devices

Ding, D., Johnson, S. & Zhang, Y-H., 2010, Conference Record of the IEEE Photovoltaic Specialists Conference. p. 2908-2911 4 p. 5614517

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Analytical models
Solar cells
Semiconductor materials
Spontaneous emission
Solar radiation
105 Citations (Scopus)

Clustering effects in Ga(AsBi)

Imhof, S., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Kolata, K., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Rubel, O., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131115.

Research output: Contribution to journalArticle

disorders
simulation
pumps
photoluminescence
temperature
18 Citations (Scopus)

Four-junction solar cells using lattice-matched II-VI and HI-V semiconductors

Wu, S. N., Ding, D., Johnson, S., Yu, S. Q. & Zhang, Y-H., Aug 2010, In : Progress in Photovoltaics: Research and Applications. 18, 5, p. 328-333 6 p.

Research output: Contribution to journalArticle

Crystal lattices
Solar cells
solar cells
Semiconductor materials
Sun
9 Citations (Scopus)

Improved performance of GaAsSb/GaAs SQW lasers

Hossain, N., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D. & Zhang, Y-H., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7616. 761608

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium Arsenide
threshold currents
Laser
Recombination
Threshold current density
1 Citation (Scopus)

Influence of device structures on carrier recombination in GaAsSb/GaAs QW lasers

Hossain, N., Hild, K., Jin, S. R., Sweeney, S. J., Yu, S. Q., Johnson, S., Ding, D. & Zhang, Y-H., 2010, 2010 Photonics Global Conference, PGC 2010. 5706061

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gallium Arsenide
Recombination
Laser
Lasers
defects