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1992 …2021
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Research Output 1992 2019

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Article
2019
1 Citation (Scopus)

Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy

Kosireddy, R. R., Schaefer, S. T., Shalindar, A. J. & Johnson, S., Sep 7 2019, In : Journal of Applied Physics. 126, 9, 095108.

Research output: Contribution to journalArticle

molecular beam epitaxy
overpressure
microstructure
chemical properties
backscattering
1 Citation (Scopus)

Molecular beam epitaxy growth and optical properties of InAsSbBi

Schaefer, S. T., Kosireddy, R. R., Webster, P. T. & Johnson, S., Aug 28 2019, In : Journal of Applied Physics. 126, 8, 083101.

Research output: Contribution to journalArticle

Open Access
molecular beam epitaxy
optical properties
temperature
bismuth
quantum wells
2018
2 Citations (Scopus)

Auger losses in dilute InAsBi

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., May 7 2018, In : Applied Physics Letters. 112, 19, 192106.

Research output: Contribution to journalArticle

orbits
eigenvectors
retarding
density functional theory
coefficients
5 Citations (Scopus)

Extended band anti-crossing model for dilute bismides

Hader, J., Badescu, S. C., Bannow, L. C., Moloney, J. V., Johnson, S. & Koch, S. W., Feb 5 2018, In : Applied Physics Letters. 112, 6, 062103.

Research output: Contribution to journalArticle

quantum wells
density functional theory
absorption spectra
photoluminescence
2017
5 Citations (Scopus)

Bandgap and composition of bulk InAsSbBi grown by molecular beam epitaxy

Webster, P. T., Shalindar, A. J., Schaefer, S. T. & Johnson, S., Aug 21 2017, In : Applied Physics Letters. 111, 8, 082104.

Research output: Contribution to journalArticle

molecular beam epitaxy
ellipsometry
backscattering
diffraction
high energy electrons
2016
6 Citations (Scopus)

Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction

Shalindar, A. J., Webster, P. T., Wilkens, B. J., Alford, T. & Johnson, S., Oct 14 2016, In : Journal of Applied Physics. 120, 14, 145704.

Research output: Contribution to journalArticle

backscattering
diffraction
spectroscopy
x rays
sidebands
11 Citations (Scopus)

Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

Webster, P. T., Shalindar, A. J., Riordan, N. A., Gogineni, C., Liang, H., Sharma, A. R. & Johnson, S., Jun 14 2016, In : Journal of Applied Physics. 119, 22, 225701.

Research output: Contribution to journalArticle

superlattices
optical properties
ellipsometry
absorptivity
molecular beam epitaxy
2015
6 Citations (Scopus)

Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry

Webster, P. T., Riordan, N. A., Liu, S., Steenbergen, E. H., Synowicki, R. A., Zhang, Y-H. & Johnson, S., Feb 9 2015, In : Applied Physics Letters. 106, 6, 061907.

Research output: Contribution to journalArticle

ellipsometry
superlattices
absorptivity
ground state
room temperature
14 Citations (Scopus)
Superlattices
Molecular beam epitaxy
superlattices
Transmission electron microscopy
transmission electron microscopy
26 Citations (Scopus)

Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy

Webster, P. T., Riordan, N. A., Liu, S., Steenbergen, E. H., Synowicki, R. A., Zhang, Y-H. & Johnson, S., Dec 28 2015, In : Journal of Applied Physics. 118, 24, 245706.

Research output: Contribution to journalArticle

ellipsometry
photoluminescence
spectroscopy
superlattices
diffraction
2014
15 Citations (Scopus)

Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices

Webster, P. T., Riordan, N. A., Gogineni, C., Liu, S., Lu, J., Zhao, X. H., Smith, D., Zhang, Y-H. & Johnson, S., 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 02C120.

Research output: Contribution to journalArticle

Bismuth
Superlattices
Molecular beam epitaxy
Surface-Active Agents
bismuth
11 Citations (Scopus)

Rapid thermal annealing effect on GaAsBi/GaAs single quantum wells grown by molecular beam epitaxy

Grant, P. C., Fan, D., Mosleh, A., Yu, S. Q., Dorogan, V. G., Hawkridge, M. E., Mazur, Y. I., Benamara, M., Salamo, G. J. & Johnson, S., Jan 1 2014, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32, 2, 02C119.

Research output: Contribution to journalArticle

Rapid thermal annealing
Molecular beam epitaxy
Semiconductor quantum wells
molecular beam epitaxy
quantum wells
2013
5 Citations (Scopus)

A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy

Li, H., Liu, S., Cellek, O. O., Ding, D., Shen, X. M., Steenbergen, E. H., Fan, J., Lin, Z., He, Z. Y., Zhang, Q., Webster, P. T., Johnson, S., Ouyang, L., Smith, D. & Zhang, Y-H., 2013, In : Journal of Crystal Growth. 378, p. 145-149 5 p.

Research output: Contribution to journalArticle

Superlattices
Molecular beam epitaxy
superlattices
molecular beam epitaxy
Calibration
10 Citations (Scopus)

Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy

Fan, D., Zeng, Z., Dorogan, V. G., Hirono, Y., Li, C., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M. & Salamo, G. J., Jan 1 2013, In : Journal of Materials Science: Materials in Electronics. 24, 5, p. 1635-1639 5 p.

Research output: Contribution to journalArticle

Quantum Dots
Bismuth
Molecular beam epitaxy
Surface-Active Agents
bismuth
3 Citations (Scopus)

Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions

Shakfa, M. K., Chernikov, A., Kalincev, D., Chatterjee, S., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Koch, M., Sep 1 2013, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 9, p. 1234-1237 4 p.

Research output: Contribution to journalArticle

quantum wells
photoluminescence
excitation
blue shift
quenching
35 Citations (Scopus)

Disorder and the Urbach edge in dilute bismide GaAsBi

Gogineni, C., Riordan, N. A., Johnson, S., Lu, X. & Tiedje, T., Jul 22 2013, In : Applied Physics Letters. 103, 4, 041110.

Research output: Contribution to journalArticle

disorders
sublattices
temperature
quantum wells
pumps
26 Citations (Scopus)

Effects of spatial confinement and layer disorder in photoluminescence of GaAs1-xBix/GaAs heterostructures

Mazur, Y. I., Dorogan, V. G., Benamara, M., Ware, M. E., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Tiedje, T. & Salamo, G. J., Feb 13 2013, In : Journal of Physics D: Applied Physics. 46, 6, 065306.

Research output: Contribution to journalArticle

Heterojunctions
Photoluminescence
Optical properties
disorders
photoluminescence
8 Citations (Scopus)

Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy

Liu, S., Li, H., Cellek, O. O., Ding, D., Shen, X. M., Lin, Z. Y., Steenbergen, E. H., Fan, J., He, Z. Y., Lu, J., Johnson, S., Smith, D. & Zhang, Y-H., Feb 18 2013, In : Applied Physics Letters. 102, 7, 071903.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
optical properties
photoluminescence
temperature
18 Citations (Scopus)

MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures

Fan, D., Grant, P. C., Yu, S. Q., Dorogan, V. G., Hu, X., Zeng, Z., Li, C., Hawkridge, M. E., Benamara, M., Mazur, Y. I., Salamo, G. J., Johnson, S. & Wang, Z. M., Jan 1 2013, In : Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31, 3, 03C105.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Semiconductor quantum wells
Heterojunctions
quantum wells
interruption
26 Citations (Scopus)

Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells

Shakfa, M. K., Kalincev, D., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Chernikov, A., Chatterjee, S. & Koch, M., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 164306.

Research output: Contribution to journalArticle

quantum wells
optoelectronic devices
continuous radiation
tendencies
photoluminescence
16 Citations (Scopus)

Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

Mazur, Y. I., Dorogan, V. G., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Ware, M. E., Yu, S. Q., Tiedje, T. & Salamo, G. J., Apr 14 2013, In : Journal of Applied Physics. 113, 14, 144308.

Research output: Contribution to journalArticle

line shape
quantum wells
photoluminescence
excitons
excitation
4 Citations (Scopus)

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

Hossain, N., Hild, K., Jin, S. R., Yu, S. Q., Johnson, S., Ding, D., Zhang, Y-H. & Sweeney, S. J., Jan 28 2013, In : Applied Physics Letters. 102, 4, 041106.

Research output: Contribution to journalArticle

quantum well lasers
threshold currents
quantum wells
current density
room temperature
2012
1 Citation (Scopus)

Carrier-phonon coupling in GaAs 1xBi x/GaAs quantum wells

Chernikov, A., Bornwasser, V., Koch, M., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Chatterjee, S., Aug 1 2012, In : Semiconductor Science and Technology. 27, 8, 085012.

Research output: Contribution to journalArticle

Semiconductor quantum wells
quantum wells
Phonon scattering
Photoluminescence
Temperature
5 Citations (Scopus)

Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements

Blume, G., Hild, K., Marko, I. P., Hosea, T. J. C., Yu, S. Q., Chaparro, S. A., Samal, N., Johnson, S., Zhang, Y-H. & Sweeney, S. J., Aug 2012, In : Journal of Applied Physics. 112, 3, 033108.

Research output: Contribution to journalArticle

laser cavities
alignment
surface emitting lasers
cavities
spectroscopy
3 Citations (Scopus)

CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy

Li, J. J., Liu, X., Liu, S., Wang, S., Smith, D., Ding, D., Johnson, S., Furdyna, J. K. & Zhang, Y-H., Mar 19 2012, In : Applied Physics Letters. 100, 12, 121908.

Research output: Contribution to journalArticle

superlattices
molecular beam epitaxy
photoluminescence
optoelectronic devices
envelopes
20 Citations (Scopus)

Molecular beam epitaxy growth of GaAsBi/GaAs/AlGaAs separate confinement heterostructures

Fan, D., Zeng, Z., Hu, X., Dorogan, V. G., Li, C., Benamara, M., Hawkridge, M. E., Mazur, Y. I., Yu, S. Q., Johnson, S., Wang, Z. M. & Salamo, G. J., Oct 29 2012, In : Applied Physics Letters. 101, 18, 181103.

Research output: Contribution to journalArticle

aluminum gallium arsenides
molecular beam epitaxy
temperature profiles
quantum wells
photoluminescence
1 Citation (Scopus)

Photoluminescence studies of type-II CdSe/CdTe superlattices

Li, J. J., Yin, L., Johnson, S., Skromme, B., Wang, S., Liu, X., Ding, D., Ning, C-Z., Furdyna, J. K. & Zhang, Y-H., Aug 6 2012, In : Applied Physics Letters. 101, 6, 061915.

Research output: Contribution to journalArticle

superlattices
photoluminescence
carrier lifetime
Poisson equation
blue shift
18 Citations (Scopus)

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Riordan, N. A., Gogineni, C., Johnson, S., Lu, X., Tiedje, T., Ding, D., Zhang, Y-H., Fritz, R., Kolata, K., Chatterjee, S., Volz, K. & Koch, S. W., Oct 2012, In : Journal of Materials Science: Materials in Electronics. 23, 10, p. 1799-1804 6 p.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Photoluminescence
Pumps
pumps
photoluminescence
2011
37 Citations (Scopus)

A semi-analytical model for semiconductor solar cells

Ding, D., Johnson, S., Yu, S. Q., Wu, S. N. & Zhang, Y-H., Dec 15 2011, In : Journal of Applied Physics. 110, 12, 123104.

Research output: Contribution to journalArticle

solar cells
slabs
absorptance
planar structures
short circuit currents
14 Citations (Scopus)

Evidence of two disorder scales in Ga(AsBi)

Imhof, S., Wagner, C., Chernikov, A., Koch, M., Kolata, K., Köster, N. S., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T., Rubel, O. & Thränhardt, A., Apr 1 2011, In : Physica Status Solidi (B) Basic Research. 248, 4, p. 851-854 4 p.

Research output: Contribution to journalArticle

disorders
Experiments
Photoluminescence
photoluminescence
energy
8 Citations (Scopus)

Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 m GaAsSb/GaAs vertical cavity surface emitting lasers

Hild, K., Marko, I. P., Johnson, S., Yu, S. Q., Zhang, Y-H. & Sweeney, S. J., Aug 15 2011, In : Applied Physics Letters. 99, 7, 071110.

Research output: Contribution to journalArticle

surface emitting lasers
tuning
threshold currents
temperature dependence
spontaneous emission
22 Citations (Scopus)

Luminescence dynamics in Ga(AsBi)

Imhof, S., Wagner, C., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Chatterjee, S., Koch, S. W., Rubel, O., Lu, X., Johnson, S., Beaton, D. A. & Tiedje, T., Apr 18 2011, In : Applied Physics Letters. 98, 16, 161104.

Research output: Contribution to journalArticle

disorders
luminescence
kinetics
simulation
19 Citations (Scopus)

Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructure

Mazur, Y. I., Dorogan, V. G., Schmidbauer, M., Tarasov, G. G., Johnson, S., Lu, X., Yu, S. Q., Wang, Z. M., Tiedje, T. & Salamo, G. J., Sep 16 2011, In : Nanotechnology. 22, 37, 375703.

Research output: Contribution to journalArticle

Molecular beam epitaxy
Semiconductor quantum wells
Nanostructures
Photoluminescence
Temperature
hemispheres
Light emitting diodes
Luminescence
luminescence
Semiconductor materials
1 Citation (Scopus)

Wavelength tuning of GaAs/AlGaAs terahertz quantum cascade lasers by controlling aluminum content in barriers

Samal, N., Sadofyev, Y. G., Annamalai, S., Chen, L., Samal, A. & Johnson, S., May 15 2011, In : Journal of Crystal Growth. 323, 1, p. 477-479 3 p.

Research output: Contribution to journalArticle

Quantum cascade lasers
quantum cascade lasers
Aluminum
aluminum gallium arsenides
Tuning
2010
105 Citations (Scopus)

Clustering effects in Ga(AsBi)

Imhof, S., Thränhardt, A., Chernikov, A., Koch, M., Köster, N. S., Kolata, K., Chatterjee, S., Koch, S. W., Lu, X., Johnson, S., Beaton, D. A., Tiedje, T. & Rubel, O., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131115.

Research output: Contribution to journalArticle

disorders
simulation
pumps
photoluminescence
temperature
18 Citations (Scopus)

Four-junction solar cells using lattice-matched II-VI and HI-V semiconductors

Wu, S. N., Ding, D., Johnson, S., Yu, S. Q. & Zhang, Y-H., Aug 2010, In : Progress in Photovoltaics: Research and Applications. 18, 5, p. 328-333 6 p.

Research output: Contribution to journalArticle

Crystal lattices
Solar cells
solar cells
Semiconductor materials
Sun
3 Citations (Scopus)
Electron holography
p-n junctions
holography
Light emitting diodes
aluminum gallium arsenides
2009

Ga(AsSb)/GaAs/(AlGa)As heterostructures: Additional hole-confinement due to quantum islands

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S., Wang, J. B. & Zhang, Y-H., 2009, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 6, 2, p. 411-414 4 p.

Research output: Contribution to journalArticle

algae
photoluminescence
energy levels
transmission electron microscopy
excitation
6 Citations (Scopus)
aluminum gallium arsenides
impurities
profiles
holography
electrons
6 Citations (Scopus)
Electron holography
Light emitting diodes
Chemical activation
Doping (additives)
Chemical analysis
2008

GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers

Yu, S. Q., Cao, Y., Johnson, S., Zhang, Y. H. & Huang, Y. Z., 2008, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26, 1, p. 56-61 6 p.

Research output: Contribution to journalArticle

triangles
Semiconductor lasers
Resonators
resonators
semiconductor lasers
3 Citations (Scopus)

Hole confinement in quantum islands in Ga (AsSb) GaAs (AlGa) As heterostructures

Horst, S., Chatterjee, S., Hantke, K., Klar, P. J., Nemeth, I., Stolz, W., Volz, K., Bückers, C., Thränhardt, A., Koch, S. W., Rühle, W., Johnson, S., Wang, J. B. & Zhang, Y-H., 2008, In : Applied Physics Letters. 92, 16, 161101.

Research output: Contribution to journalArticle

algae
photoluminescence
laser materials
excitation
energy levels
15 Citations (Scopus)

Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities

Tawara, T., Kamada, H., Zhang, Y-H., Tanabe, T., Cade, N. I., Ding, D., Johnson, S., Gotoh, H., Kuramochi, E., Notomi, M. & Sogawa, T., Apr 14 2008, In : Optics Express. 16, 8, p. 5199-5205 7 p.

Research output: Contribution to journalArticle

lasing
Q factors
quantum dots
photonics
spontaneous emission
2007
29 Citations (Scopus)

Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

Wang, J. B., Ding, D., Johnson, S., Yu, S. Q. & Zhang, Y-H., Aug 2007, In : Physica Status Solidi (B) Basic Research. 244, 8, p. 2740-2751 12 p.

Research output: Contribution to journalArticle

Spontaneous emission
Quantum efficiency
Molecular beam epitaxy
spontaneous emission
aluminum gallium arsenides
27 Citations (Scopus)
Quantum efficiency
quantum efficiency
Photoluminescence
photoluminescence
life (durability)
8 Citations (Scopus)

High performance GaAsSb/GaAs quantum well lasers

Yu, S. Q., Ding, D., Wang, J. B., Samal, N., Jin, X., Cao, Y., Johnson, S. & Zhang, Y-H., 2007, In : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25, 5, p. 1658-1663 6 p.

Research output: Contribution to journalArticle

Quantum well lasers
quantum well lasers
cavities
surface emitting lasers
continuous radiation
9 Citations (Scopus)

Impact of electronic density of states on electroluminescence refrigeration

Yu, S. Q., Wang, J. B., Ding, D., Johnson, S., Vasileska, D. & Zhang, Y-H., Oct 2007, In : Solid-State Electronics. 51, 10 SPEC. ISS, p. 1387-1390 4 p.

Research output: Contribution to journalArticle

Electronic density of states
Carrier transport
Electroluminescence
Refrigeration
electroluminescence
1 Citation (Scopus)

Intrinsic irreversibility in semiconductor light emission

Ding, D., Johnson, S., Wang, J. B., Yu, S. Q. & Zhang, Y-H., 2007, In : Physica Status Solidi (C) Current Topics in Solid State Physics. 4, 5, p. 1698-1701 4 p.

Research output: Contribution to journalArticle

light emission
entropy
electric power
energy
3 Citations (Scopus)

Investigation of defect structure of InGaNAsSb/GaAs quantum wells

Borkovska, L., Korsunska, N., Kladko, V., Kryshtab, T., Kushnirenko, V., Slobodyan, M., Yefanov, O., Venger, Y., Johnson, S., Sadofyev, Y. & Zhang, Y-H., Sep 2007, In : Materials Science and Engineering C. 27, 5-8 SPEC. ISS., p. 1038-1042 5 p.

Research output: Contribution to journalArticle

Defect structures
Semiconductor quantum wells
Photoluminescence
quantum wells
photoluminescence