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Research Output 1900 2019

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2019
1 Citation (Scopus)

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

Photoluminescence
Energy gap
photoluminescence
Conduction bands
Temperature
3 Citations (Scopus)

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
germanium
photoelectronics
optical transition
microelectronics
ellipsometry

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Hydrogen
passivity
Semiconductor materials
Passivation
hydrogen plasma
2 Citations (Scopus)

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, L-Y., Poweleit, C. D., Kouvetakis, J. & Menendez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

optical properties
synthesis
atmospheric windows
low concentrations
lattice parameters

Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journalArticle

photoluminescence
temperature
valleys
valence
energy
2018
2 Citations (Scopus)

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Ultrahigh vacuum
Photodiodes

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journalArticle

Hydrides
Doping (additives)
Fabrication
Boron
Chemical activation
1 Citation (Scopus)

Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journalArticle

Inductively coupled plasma
Buffer layers
Hydrogen
Spectroscopy
hydrogen
2017
12 Citations (Scopus)
backscattering
deviation
thin films
diffraction
x rays
5 Citations (Scopus)

Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journalArticle

cryogenic temperature
Epitaxial growth
epitaxy
Chemical vapor deposition
Molecular beam epitaxy
5 Citations (Scopus)

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journalArticle

critical point
Bryophytes
phenomenology
occupation
ellipsometry
2 Citations (Scopus)
Diamond
Epitaxial layers
Ellipsometry
Crystallization
Epitaxial growth
2 Citations (Scopus)

Synthesis and optical properties of (GaAs)yGe5-2 y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journalArticle

optical properties
tetrahedrons
synthesis
diamonds
zincblende

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journalArticle

Structural properties
Photoluminescence
Optical properties
Semiconductor materials
Lattice constants
2016
5 Citations (Scopus)

Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journalArticle

photoluminescence
temperature
valleys
optoelectronic devices
chips
18 Citations (Scopus)

Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journalArticle

photodiodes
diodes
fabrication
dark current
ternary alloys
18 Citations (Scopus)
Lattice constants
lattice parameters
Doping (additives)
antimony
rigidity
5 Citations (Scopus)

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 1 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journalArticle

Tensile strain
Energy gap
Spectroscopy
spectroscopy
valleys
7 Citations (Scopus)

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journalArticle

Optical properties
optical properties
Photoluminescence
photoluminescence
Spectroscopic ellipsometry
6 Citations (Scopus)

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Jul 27 2016, (Accepted/In press) In : Applied Surface Science.

Research output: Contribution to journalArticle

Epilayers
Thermal expansion
Spectroscopic ellipsometry
Substrates
Tensile stress
7 Citations (Scopus)

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journalArticle

Epitaxial growth
Hydrides
Heterojunctions
Carrier concentration
Germanium
2015
10 Citations (Scopus)

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journalArticle

Bending (forming)
Optical transitions
optical transition
critical point
Electronegativity
4 Citations (Scopus)
Crystalline materials
Substitution reactions
Atoms
Diamond
Boron
8 Citations (Scopus)

Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journalArticle

electroluminescence
diodes
conduction bands
Brillouin zones
light emission
37 Citations (Scopus)

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journalArticle

electroluminescence
diodes
dark current
crossovers
trends
14 Citations (Scopus)

Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journalArticle

light emitting diodes
photonics
silicon
red shift
ternary alloys
7 Citations (Scopus)

In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journalArticle

Carrier concentration
prototypes
Doping (additives)
routes
analogs
11 Citations (Scopus)
Polysilicon
Phosphorus
Carrier concentration
phosphorus
Chemical vapor deposition
16 Citations (Scopus)

Non-radiative recombination in Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In : Journal of Applied Physics. 117, 24, 245704.

Research output: Contribution to journalArticle

light emitting diodes
diodes
analogs
fabrication
cryogenic temperature
8 Citations (Scopus)

Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy

Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In : Thin Solid Films. 591, p. 295-300 6 p.

Research output: Contribution to journalArticle

Electron transitions
Spectroscopy
Laser excitation
spectroscopy
Electric fields
2014
30 Citations (Scopus)

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journalArticle

Light emission
Photoluminescence
Doping (additives)
Passivation
Photoluminescence spectroscopy
56 Citations (Scopus)

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1 - ySny alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journalArticle

crossovers
photoluminescence
shift
coefficients
predictions
67 Citations (Scopus)
crossovers
Photoluminescence
Energy gap
photoluminescence
room temperature
31 Citations (Scopus)

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journalArticle

Ternary alloys
Optoelectronic devices
Wavelength
Semiconductor materials
Hatches
2 Citations (Scopus)

Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1

Research output: Contribution to journalArticle

Electric properties
Substrates
Scattering
Lattice mismatch
Epitaxial films
16 Citations (Scopus)

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journalArticle

germanium
ionization
electrical resistivity
solubility
thermal energy
25 Citations (Scopus)

Ge1- ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journalArticle

optical properties
microstructure
synthesis
vapor deposition
wafers

High resolution EELS study of Ge<inf>1-y</inf>Sn<inf>y</inf> and Ge<inf>1-x</inf>-ySi<inf>x</inf>Sn<inf>y</inf> alloys

Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.

Research output: Contribution to journalArticle

Electron energy loss spectroscopy
high resolution
3 Citations (Scopus)
Sulfur
Doping (additives)
Semiconductor materials
Carrier concentration
Poisons
5 Citations (Scopus)
Nanostructures
Semiconductor materials
Experiments
Imaging techniques
Diamond
15 Citations (Scopus)

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Harris, T. R., Yeo, Y. K., Ryu, M. Y., Beeler, R. T. & Kouvetakis, J., Sep 14 2014, In : Journal of Applied Physics. 116, 10, 103502.

Research output: Contribution to journalArticle

photoluminescence
valleys
lasers
low concentrations
fabrication
15 Citations (Scopus)

Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices

Xu, C., Beeler, R. T., Jiang, L., Gallagher, J. D., Favaro, R., Menendez, J. & Kouvetakis, J., Apr 30 2014, In : Thin Solid Films. 557, p. 177-182 6 p.

Research output: Contribution to journalArticle

Optical properties
optical properties
synthesis
Gas source molecular beam epitaxy
Ultrahigh vacuum
2013
13 Citations (Scopus)

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9

Research output: Contribution to journalArticle

Photodiodes
Optoelectronic devices
Diodes
Energy gap
Semiconductor materials
39 Citations (Scopus)

Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journalArticle

crossovers
interpolation
photoluminescence
predictions
spectroscopy
3 Citations (Scopus)
Hydrides
Isomers
Fabrication
Thermochemistry
Quantum chemistry
6 Citations (Scopus)
Silicon
tetrahedrons
Structural properties
Optical properties
assembly
26 Citations (Scopus)

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 2013, In : Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journalArticle

Hydrides
hydrides
chemistry
Thermochemistry
Dark currents
18 Citations (Scopus)

Optical properties of Ge1x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm

Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Aug 12 2013, In : Applied Physics Letters. 103, 7, 072111.

Research output: Contribution to journalArticle

optical properties
photoluminescence
ternary alloys
entropy
room temperature
2 Citations (Scopus)

Rational design of monocrystalline (InP)yGe5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties

Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.

Research output: Contribution to journalArticle

Semiconductors
Diamond
Raman Spectrum Analysis
Molecular Structure
Optical properties