John Kouvetakis &ndash; Scholarly Works

2019

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge _1-x-y Si _x Sn _y and Ge _1-y Sn _y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journal › Article

Photoluminescence

Energy gap

photoluminescence

Conduction bands

Temperature

3 Citations (Scopus)

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journal › Article

Open Access

germanium

photoelectronics

optical transition

microelectronics

ellipsometry

Enhanced optical and electrical performance of Ge _1-x Sn _x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journal › Article

Hydrogen

passivity

Semiconductor materials

Passivation

hydrogen plasma

2 Citations (Scopus)

Mid-infrared (3-8 μ m) Ge_1-_ySn_y alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, L-Y., Poweleit, C. D., Kouvetakis, J. & Menendez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journal › Article

optical properties

synthesis

atmospheric windows

low concentrations

lattice parameters

Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journal › Article

photoluminescence

temperature

valleys

valence

energy

2018

2 Citations (Scopus)

Electrical characterization and deep-level transient spectroscopy of Ge_0.873Si_0.104Sn_0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journal › Article

Deep level transient spectroscopy

Capacitance measurement

Voltage measurement

Ultrahigh vacuum

Photodiodes

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journal › Article

Hydrides

Doping (additives)

Fabrication

Boron

Chemical activation

1 Citation (Scopus)

Investigation of hydrogen inductively coupled plasma treatment effect for Ge_0.938Sn_0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journal › Article

Inductively coupled plasma

Buffer layers

Hydrogen

Spectroscopy

hydrogen

2017

12 Citations (Scopus)

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge_1- _ySn_y and Ge_1- _xSi_x cases

Xu, C., Senaratne, C. L., Culbertson, R., Kouvetakis, J. & Menendez, J., Sep 28 2017, In : Journal of Applied Physics. 122, 12, 125702.

Research output: Contribution to journal › Article

backscattering

deviation

thin films

diffraction

x rays

5 Citations (Scopus)

Molecular epitaxy of pseudomorphic Ge_1-ySn_y (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge₄H₁₀ and SnD₄

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journal › Article

cryogenic temperature

Epitaxial growth

epitaxy

Chemical vapor deposition

Molecular beam epitaxy

5 Citations (Scopus)

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journal › Article

critical point

Bryophytes

phenomenology

occupation

ellipsometry

2 Citations (Scopus)

Synthesis and Characterization of Monocrystalline GaPSi₃ and (GaP)_y(Si)_5-2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides

Sims, P. E., Xu, C., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Apr 11 2017, In : Chemistry of Materials. 29, 7, p. 3202-3210 9 p.

Research output: Contribution to journal › Article

Diamond

Epitaxial layers

Ellipsometry

Crystallization

Epitaxial growth

2 Citations (Scopus)

Synthesis and optical properties of (GaAs)_yGe_5-2 _y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journal › Article

optical properties

tetrahedrons

synthesis

diamonds

zincblende

Synthesis and Structural and Optical Properties of Ga(As_1-xP_x)Ge₃ and (GaP)_yGe_5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journal › Article

Structural properties

Photoluminescence

Optical properties

Semiconductor materials

Lattice constants

2016

5 Citations (Scopus)

Direct bandgap cross-over point of Ge_1-ySn_y grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journal › Article

photoluminescence

temperature

valleys

optoelectronic devices

chips

18 Citations (Scopus)

Direct gap Ge_1-ySn_y alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journal › Article

photodiodes

diodes

fabrication

dark current

ternary alloys

18 Citations (Scopus)

Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Jan 8 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 4, 041201.

Research output: Contribution to journal › Article

Lattice constants

lattice parameters

Doping (additives)

antimony

rigidity

5 Citations (Scopus)

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge_0.985Sn_0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 1 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journal › Article

Tensile strain

Energy gap

Spectroscopy

spectroscopy

valleys

7 Citations (Scopus)

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journal › Article

Optical properties

optical properties

Photoluminescence

photoluminescence

Spectroscopic ellipsometry

6 Citations (Scopus)

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Jul 27 2016, (Accepted/In press) In : Applied Surface Science.

Research output: Contribution to journal › Article

Epilayers

Thermal expansion

Spectroscopic ellipsometry

Substrates

Tensile stress

7 Citations (Scopus)

Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journal › Article

Epitaxial growth

Hydrides

Heterojunctions

Carrier concentration

Germanium

2015

10 Citations (Scopus)

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journal › Article

Bending (forming)

Optical transitions

optical transition

critical point

Electronegativity

4 Citations (Scopus)

Crystalline (Al<inf>1-x</inf>B<inf>x</inf>)PSi<inf>3</inf> and (Al<inf>1-x</inf>B<inf>x</inf>)AsSi<inf>3</inf> tetrahedral phases via reactions of Al(BH<inf>4</inf>)<inf>3</inf> and M(SiH<inf>3</inf>)<inf>3</inf> (M = P, As)

Sims, P., Aoki, T., Favaro, R., Wallace, P., White, A., Xu, C., Menendez, J. & Kouvetakis, J., Apr 28 2015, In : Chemistry of Materials. 27, 8, p. 3030-3039 10 p.

Research output: Contribution to journal › Article

Crystalline materials

Substitution reactions

Atoms

Diamond

Boron

8 Citations (Scopus)

Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journal › Article

electroluminescence

diodes

conduction bands

Brillouin zones

light emission

37 Citations (Scopus)

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journal › Article

electroluminescence

diodes

dark current

crossovers

trends

14 Citations (Scopus)

Ge_1-x-ySi_xSn_y light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journal › Article

light emitting diodes

photonics

silicon

red shift

ternary alloys

7 Citations (Scopus)

In situ low temperature As-doping of Ge films using As(SiH₃)₃ and As(GeH₃)₃: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journal › Article

Carrier concentration

prototypes

Doping (additives)

routes

analogs

11 Citations (Scopus)

Non-conventional routes to SiGe: P/Si(100) materials and devices based on -SiH₃ and -GeH₃ derivatives of phosphorus: Synthesis, electrical performance and optical behavior

Xu, C., Gallagher, J. D., Sims, P., Smith, D., Menendez, J. & Kouvetakis, J., Apr 1 2015, In : Semiconductor Science and Technology. 30, 4, 045007.

Research output: Contribution to journal › Article

Polysilicon

Phosphorus

Carrier concentration

phosphorus

Chemical vapor deposition

16 Citations (Scopus)

Non-radiative recombination in Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In : Journal of Applied Physics. 117, 24, 245704.

Research output: Contribution to journal › Article

light emitting diodes

diodes

analogs

fabrication

cryogenic temperature

8 Citations (Scopus)

Temperature-dependent direct transition energy in Ge_0.99Sn_0.01 film grown on Si measured by photoreflectance spectroscopy

Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In : Thin Solid Films. 591, p. 295-300 6 p.

Research output: Contribution to journal › Article

Electron transitions

Spectroscopy

Laser excitation

spectroscopy

Electric fields

2014

30 Citations (Scopus)

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journal › Article

Light emission

Photoluminescence

Doping (additives)

Passivation

Photoluminescence spectroscopy

Atomic scale studies of structure and bonding in A1PSi<inf>3</inf> alloys grown lattice-matched on Si(001)

Aoki, T., Jiang, L., Chizmeshya, A., Menendez, J., Kouvetakis, J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 524-525 2 p.

Research output: Contribution to journal › Article

56 Citations (Scopus)

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge₁ _- _ySn_y alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journal › Article

crossovers

photoluminescence

shift

coefficients

predictions

67 Citations (Scopus)

Compositional dependence of the direct and indirect band gaps in Ge_1-ySn_y alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials

Jiang, L., Gallagher, J. D., Senaratne, C. L., Aoki, T., Mathews, J., Kouvetakis, J. & Menendez, J., Nov 1 2014, In : Semiconductor Science and Technology. 29, 11, 115028.

Research output: Contribution to journal › Article

crossovers

Photoluminescence

Energy gap

photoluminescence

room temperature

31 Citations (Scopus)

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journal › Article

Ternary alloys

Optoelectronic devices

Wavelength

Semiconductor materials

Hatches

2 Citations (Scopus)

Electrical characterization studies of p-type Ge, Ge_1-ySn _y, and Si_0.09Ge_0.882Sn_0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1

Research output: Contribution to journal › Article

Electric properties

Substrates

Scattering

Lattice mismatch

Epitaxial films

16 Citations (Scopus)

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journal › Article

germanium

ionization

electrical resistivity

solubility

thermal energy

25 Citations (Scopus)

Ge_1- _ySn_y (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journal › Article

optical properties

microstructure

synthesis

vapor deposition

wafers

High resolution EELS study of Ge<inf>1-y</inf>Sn<inf>y</inf> and Ge<inf>1-x</inf>-ySi<inf>x</inf>Sn<inf>y</inf> alloys

Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.

Research output: Contribution to journal › Article

Electron energy loss spectroscopy

high resolution

3 Citations (Scopus)

Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH₃)₂ (M = Si,Ge) delivery sources: An experimental and theoretical inquiry

Kouvetakis, J., Favaro, R., Grzybowski, G. J., Senaratne, C., Menendez, J. & Chizmeshya, A., Aug 12 2014, In : Chemistry of Materials. 26, 15, p. 4447-4458 12 p.

Research output: Contribution to journal › Article

Sulfur

Doping (additives)

Semiconductor materials

Carrier concentration

Poisons

5 Citations (Scopus)

Nanostructure-property control in AlPSi₃/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level

Jiang, L., Aoki, T., Smith, D., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Jul 22 2014, In : Chemistry of Materials. 26, 14, p. 4092-4101 10 p.

Research output: Contribution to journal › Article

Nanostructures

Semiconductor materials

Experiments

Imaging techniques

Diamond

15 Citations (Scopus)

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Harris, T. R., Yeo, Y. K., Ryu, M. Y., Beeler, R. T. & Kouvetakis, J., Sep 14 2014, In : Journal of Applied Physics. 116, 10, 103502.

Research output: Contribution to journal › Article

photoluminescence

valleys

lasers

low concentrations

fabrication

15 Citations (Scopus)

Synthesis and optical properties of Sn-rich Ge_{1-X -y}Si _xSn_y materials and devices

Xu, C., Beeler, R. T., Jiang, L., Gallagher, J. D., Favaro, R., Menendez, J. & Kouvetakis, J., Apr 30 2014, In : Thin Solid Films. 557, p. 177-182 6 p.

Research output: Contribution to journal › Article

Optical properties

optical properties

synthesis

Gas source molecular beam epitaxy

Ultrahigh vacuum

2013

13 Citations (Scopus)

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9

Research output: Contribution to journal › Article

Photodiodes

Optoelectronic devices

Diodes

Energy gap

Semiconductor materials

39 Citations (Scopus)

Fundamental band gap and direct-indirect crossover in Ge _1-x-ySi_xSn_y alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journal › Article

crossovers

interpolation

photoluminescence

predictions

spectroscopy

3 Citations (Scopus)

Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication

Grzybowski, G., Chizmeshya, A., Senaratne, C., Menendez, J. & Kouvetakis, J., Sep 14 2013, In : Journal of Materials Chemistry C. 1, 34, p. 5223-5234 12 p.

Research output: Contribution to journal › Article

Hydrides

Isomers

Fabrication

Thermochemistry

Quantum chemistry

6 Citations (Scopus)

Nanoscale assembly of silicon-like [Al(As1_-xN^x)] ^ySi5_-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties

Jiang, L., Sims, P. E., Grzybowski, G., Beeler, R. T., Chizmeshya, A., Smith, D., Kouvetakis, J. & Menendez, J., Jul 31 2013, In : Physical Review B - Condensed Matter and Materials Physics. 88, 4, 045208.

Research output: Contribution to journal › Article

Silicon

tetrahedrons

Structural properties

Optical properties

assembly

26 Citations (Scopus)

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 2013, In : Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journal › Article

Hydrides

hydrides

chemistry

Thermochemistry

Dark currents

18 Citations (Scopus)

Optical properties of Ge_1x-ySi_xSn_y alloys with y > x: Direct bandgaps beyond 1550 nm

Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Aug 12 2013, In : Applied Physics Letters. 103, 7, 072111.

Research output: Contribution to journal › Article

optical properties

photoluminescence

ternary alloys

entropy

room temperature

2 Citations (Scopus)

Rational design of monocrystalline (InP)_yGe_5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties

Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.

Research output: Contribution to journal › Article

Semiconductors

Diamond

Raman Spectrum Analysis

Molecular Structure

Optical properties