Research Output per year
Research Output 1900 2019
- 1 - 50 out of 205 results
- Publication Year, Title (descending)
Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si
Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.Research output: Contribution to journal › Article
Doping dependence of the optical dielectric function in n-type germanium
Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.Research output: Contribution to journal › Article
Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments
Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.Research output: Contribution to journal › Article
Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties
Xu, C., Wallace, P. M., Ringwala, D. A., Chang, L-Y., Poweleit, C. D., Kouvetakis, J. & Menendez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.Research output: Contribution to journal › Article
Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In : Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.Research output: Contribution to journal › Article
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.Research output: Contribution to journal › Article
Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries
Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In : ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.Research output: Contribution to journal › Article
Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy
Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In : Thin Solid Films. 645, p. 345-350 6 p.Research output: Contribution to journal › Article
Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1- ySny and Ge1- xSix cases
Xu, C., Senaratne, C. L., Culbertson, R., Kouvetakis, J. & Menendez, J., Sep 28 2017, In : Journal of Applied Physics. 122, 12, 125702.Research output: Contribution to journal › Article
Molecular epitaxy of pseudomorphic Ge1-ySny (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge4H10 and SnD4
Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In : Semiconductor Science and Technology. 32, 2, 025003.Research output: Contribution to journal › Article
Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge
Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In : Physical Review Letters. 118, 26, 267402.Research output: Contribution to journal › Article
Synthesis and Characterization of Monocrystalline GaPSi3 and (GaP)y(Si)5-2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides
Sims, P. E., Xu, C., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Apr 11 2017, In : Chemistry of Materials. 29, 7, p. 3202-3210 9 p.Research output: Contribution to journal › Article
Synthesis and optical properties of (GaAs)yGe5-2 y alloys assembled from molecular building blocks
Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In : Applied Physics Letters. 111, 12, 122101.Research output: Contribution to journal › Article
Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms
Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In : ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.Research output: Contribution to journal › Article
Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies
Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In : Journal of Applied Physics. 120, 8, 085706.Research output: Contribution to journal › Article
Direct gap Ge1-ySny alloys: Fabrication and design of mid-IR photodiodes
Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In : Journal of Applied Physics. 120, 2, 025701.Research output: Contribution to journal › Article
Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si
Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Jan 8 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 4, 041201.Research output: Contribution to journal › Article
Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy
Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 1 2016, In : Current Applied Physics. 16, 1, p. 83-87 5 p.Research output: Contribution to journal › Article
Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps
Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In : Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.Research output: Contribution to journal › Article
Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si
Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Jul 27 2016, (Accepted/In press) In : Applied Surface Science.Research output: Contribution to journal › Article
Ultralow Resistivity Ge: Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane
Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In : ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.Research output: Contribution to journal › Article
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys
Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In : Solid-State Electronics. 110, p. 76-82 7 p.Research output: Contribution to journal › Article
Crystalline (Al<inf>1-x</inf>B<inf>x</inf>)PSi<inf>3</inf> and (Al<inf>1-x</inf>B<inf>x</inf>)AsSi<inf>3</inf> tetrahedral phases via reactions of Al(BH<inf>4</inf>)<inf>3</inf> and M(SiH<inf>3</inf>)<inf>3</inf> (M = P, As)
Sims, P., Aoki, T., Favaro, R., Wallace, P., White, A., Xu, C., Menendez, J. & Kouvetakis, J., Apr 28 2015, In : Chemistry of Materials. 27, 8, p. 3030-3039 10 p.Research output: Contribution to journal › Article
Electroluminescence from Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> diodes with degenerate pn junctions
Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In : Applied Physics Letters. 107, 12, 123507.Research output: Contribution to journal › Article
Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition
Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In : Applied Physics Letters. 106, 9, 091103.Research output: Contribution to journal › Article
Ge1-x-ySixSny light emitting diodes on silicon for mid-infrared photonic applications
Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In : Journal of Applied Physics. 118, 13, 135701.Research output: Contribution to journal › Article
In situ low temperature As-doping of Ge films using As(SiH3)3 and As(GeH3)3: Fundamental properties and device prototypes
Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In : Semiconductor Science and Technology. 30, 10, 105028.Research output: Contribution to journal › Article
Non-conventional routes to SiGe: P/Si(100) materials and devices based on -SiH3 and -GeH3 derivatives of phosphorus: Synthesis, electrical performance and optical behavior
Xu, C., Gallagher, J. D., Sims, P., Smith, D., Menendez, J. & Kouvetakis, J., Apr 1 2015, In : Semiconductor Science and Technology. 30, 4, 045007.Research output: Contribution to journal › Article
Non-radiative recombination in Ge<inf>1-</inf><inf>y</inf>Sn<inf>y</inf> light emitting diodes: The role of strain relaxation in tuned heterostructure designs
Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In : Journal of Applied Physics. 117, 24, 245704.Research output: Contribution to journal › Article
Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy
Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In : Thin Solid Films. 591, p. 295-300 6 p.Research output: Contribution to journal › Article
Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries
Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In : Chemistry of Materials. 26, 20, p. 6033-6041 9 p.Research output: Contribution to journal › Article
Atomic scale studies of structure and bonding in A1PSi<inf>3</inf> alloys grown lattice-matched on Si(001)
Aoki, T., Jiang, L., Chizmeshya, A., Menendez, J., Kouvetakis, J. & Smith, D., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 524-525 2 p.Research output: Contribution to journal › Article
Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1 - ySny alloys
Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In : Applied Physics Letters. 105, 14, 142102.Research output: Contribution to journal › Article
Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials
Jiang, L., Gallagher, J. D., Senaratne, C. L., Aoki, T., Mathews, J., Kouvetakis, J. & Menendez, J., Nov 1 2014, In : Semiconductor Science and Technology. 29, 11, 115028.Research output: Contribution to journal › Article
Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications
Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In : Chemistry of Materials. 26, 8, p. 2522-2531 10 p.Research output: Contribution to journal › Article
Electrical characterization studies of p-type Ge, Ge1-ySn y, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In : Current Applied Physics. 14, SUPPL. 1Research output: Contribution to journal › Article
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In : Applied Physics Letters. 105, 23, 232103.Research output: Contribution to journal › Article
Ge1- ySny (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In : Journal of Applied Physics. 116, 13, 133509.Research output: Contribution to journal › Article
High resolution EELS study of Ge<inf>1-y</inf>Sn<inf>y</inf> and Ge<inf>1-x</inf>-ySi<inf>x</inf>Sn<inf>y</inf> alloys
Jiang, L., Aoki, T., Kouvetakis, J. & Menendez, J., Aug 1 2014, In : Microscopy and Microanalysis. 20, 3, p. 520-521 2 p.Research output: Contribution to journal › Article
Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH3)2 (M = Si,Ge) delivery sources: An experimental and theoretical inquiry
Kouvetakis, J., Favaro, R., Grzybowski, G. J., Senaratne, C., Menendez, J. & Chizmeshya, A., Aug 12 2014, In : Chemistry of Materials. 26, 15, p. 4447-4458 12 p.Research output: Contribution to journal › Article
Nanostructure-property control in AlPSi3/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level
Jiang, L., Aoki, T., Smith, D., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Jul 22 2014, In : Chemistry of Materials. 26, 14, p. 4092-4101 10 p.Research output: Contribution to journal › Article
Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)
Harris, T. R., Yeo, Y. K., Ryu, M. Y., Beeler, R. T. & Kouvetakis, J., Sep 14 2014, In : Journal of Applied Physics. 116, 10, 103502.Research output: Contribution to journal › Article
Synthesis and optical properties of Sn-rich Ge1-X -ySi xSny materials and devices
Xu, C., Beeler, R. T., Jiang, L., Gallagher, J. D., Favaro, R., Menendez, J. & Kouvetakis, J., Apr 30 2014, In : Thin Solid Films. 557, p. 177-182 6 p.Research output: Contribution to journal › Article
Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices
Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2013, In : ECS Journal of Solid State Science and Technology. 2, 9Research output: Contribution to journal › Article
Fundamental band gap and direct-indirect crossover in Ge 1-x-ySixSny alloys
Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In : Applied Physics Letters. 103, 20, 202104.Research output: Contribution to journal › Article
Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication
Grzybowski, G., Chizmeshya, A., Senaratne, C., Menendez, J. & Kouvetakis, J., Sep 14 2013, In : Journal of Materials Chemistry C. 1, 34, p. 5223-5234 12 p.Research output: Contribution to journal › Article
Nanoscale assembly of silicon-like [Al(As1-xNx)] ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties
Jiang, L., Sims, P. E., Grzybowski, G., Beeler, R. T., Chizmeshya, A., Smith, D., Kouvetakis, J. & Menendez, J., Jul 31 2013, In : Physical Review B - Condensed Matter and Materials Physics. 88, 4, 045208.Research output: Contribution to journal › Article
New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case
Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 2013, In : Semiconductor Science and Technology. 28, 10, 105001.Research output: Contribution to journal › Article
Optical properties of Ge1x-ySixSny alloys with y > x: Direct bandgaps beyond 1550 nm
Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Aug 12 2013, In : Applied Physics Letters. 103, 7, 072111.Research output: Contribution to journal › Article
Rational design of monocrystalline (InP)yGe5-2y/Ge/ Si(100) semiconductors: Synthesis and optical properties
Sims, P. E., Chizmeshya, A., Jiang, L., Beeler, R. T., Poweleit, C. D., Gallagher, J., Smith, D., Menendez, J. & Kouvetakis, J., Aug 21 2013, In : Journal of the American Chemical Society. 135, 33, p. 12388-12399 12 p.Research output: Contribution to journal › Article