John Kouvetakis

2020

Evolution of optical phonons in epitaxial Ge_1−ySn_y structures

Kim, Y. C., Lee, T., Ryu, M. Y., Kouvetakis, J. & Rho, H., Nov 2020, In: Journal of Raman Spectroscopy. 51, 11, p. 2305-2310 6 p.

Research output: Contribution to journal › Article › peer-review

Radiation-induced electron and hole traps in Ge_{1 -}_x Sn _x (x = 0-0.094)

Hogsed, M., Choe, K., Miguel, N., Wang, B. & Kouvetakis, J., Feb 14 2020, In: Journal of Applied Physics. 127, 6, 065708.

Research output: Contribution to journal › Article › peer-review

Open Access

Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH₄)₃and MH₃(M=P, As, Sb) at temperatures below 600 °C

Sims, P., Wallace, P., Liu, L., Zhuang, H., Kouvetakis, J. & Menéndez, J., Aug 2020, In: Semiconductor Science and Technology. 35, 8, 085034.

Research output: Contribution to journal › Article › peer-review

2019

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge _1-x-y Si _x Sn _y and Ge _1-y Sn _y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In: Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In: Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journal › Article › peer-review

Open Access

11 Scopus citations

Enhanced optical and electrical performance of Ge_1-xSn _x/Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In: Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Mid-infrared (3-8 μ m) Ge_1-_ySn_y alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, S. L. Y., Poweleit, C. D., Kouvetakis, J. & Menéndez, J., May 27 2019, In: Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

Xu, C., Ringwala, D., Wang, D., Liu, L., Poweleit, C. D., Chang, S. L. Y., Zhuang, H. L., Menéndez, J. & Kouvetakis, J., Dec 10 2019, In: Chemistry of Materials. 31, 23, p. 9831-9842 12 p.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Temperature-Dependent Photoluminescence Studies of Ge_1−ySn_y (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point

Ryu, M. Y., Harris, T. R., Wang, B., Yeo, Y. K., Hogsed, M. R., Lee, S. J., Kim, J. S. & Kouvetakis, J., Oct 1 2019, In: Journal of the Korean Physical Society. 75, 8, p. 577-585 9 p.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

2018

Electrical characterization and deep-level transient spectroscopy of Ge_0.873Si_0.104Sn_0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In: Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

Xu, C., Wallace, P. M., Ringwala, D. A., Menendez, J. & Kouvetakis, J., Oct 31 2018, In: ACS Applied Materials and Interfaces. 10, 43, p. 37198-37206 9 p.

Research output: Contribution to journal › Article › peer-review

Investigation of hydrogen inductively coupled plasma treatment effect for Ge_0.938Sn_0.062/Ge/Si film using photoreflectance spectroscopy

Jo, H. J., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Jan 1 2018, In: Thin Solid Films. 645, p. 345-350 6 p.

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

2017

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge_1-_ySn_y and Ge_1-_xSi_x cases

Xu, C., Senaratne, C. L., Culbertson, R., Kouvetakis, J. & Menendez, J., Sep 28 2017, In: Journal of Applied Physics. 122, 12, 125702.

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Molecular epitaxy of pseudomorphic Ge_1-ySn_y (y = 0.06-0.17) structures and devices on Si/Ge at ultra-low temperatures via reactions of Ge₄H₁₀ and SnD₄

Wallace, P. M., Senaratne, C. L., Xu, C., Sims, P. E., Kouvetakis, J. & Menendez, J., Jan 9 2017, In: Semiconductor Science and Technology. 32, 2, 025003.

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Observation of Phase-Filling Singularities in the Optical Dielectric Function of Highly Doped n -Type Ge

Xu, C., Fernando, N. S., Zollner, S., Kouvetakis, J. & Menendez, J., Jun 27 2017, In: Physical Review Letters. 118, 26, 267402.

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Synthesis and Characterization of Monocrystalline GaPSi₃ and (GaP)_y(Si)_5-2y Phases with Diamond-like Structures via Epitaxy-Driven Reactions of Molecular Hydrides

Sims, P. E., Xu, C., Poweleit, C. D., Menendez, J. & Kouvetakis, J., Apr 11 2017, In: Chemistry of Materials. 29, 7, p. 3202-3210 9 p.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Synthesis and optical properties of (GaAs)_yGe_5-2_y alloys assembled from molecular building blocks

Sims, P. E., Wallace, P. M., Xu, C., Poweleit, C. D., Claflin, B., Kouvetakis, J. & Menendez, J., Sep 18 2017, In: Applied Physics Letters. 111, 12, 122101.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Synthesis and Structural and Optical Properties of Ga(As_1-xP_x)Ge₃ and (GaP)_yGe_5-2y Semiconductors Using Interface-Engineered Group IV Platforms

Wallace, P. M., Sims, P. E., Xu, C., Poweleit, C. D., Kouvetakis, J. & Menendez, J., Oct 11 2017, In: ACS Applied Materials and Interfaces. 9, 40, p. 35105-35113 9 p.

Research output: Contribution to journal › Article › peer-review

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Fernando, N. S., Nunley, T. N., Ghosh, A., Nelson, C. M., Cooke, J. A., Medina, A. A., Zollner, S., Xu, C., Menendez, J. & Kouvetakis, J., Nov 1 2017, In: Applied Surface Science. 421, p. 905-912 8 p.

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

2016

Direct bandgap cross-over point of Ge_1-ySn_y grown on Si estimated through temperature-dependent photoluminescence studies

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Wang, B., Senaratne, C. L. & Kouvetakis, J., Aug 28 2016, In: Journal of Applied Physics. 120, 8, 085706.

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Direct gap Ge_1-ySn_y alloys: Fabrication and design of mid-IR photodiodes

Senaratne, C. L., Wallace, P. M., Gallagher, J. D., Sims, P. E., Kouvetakis, J. & Menendez, J., Jul 14 2016, In: Journal of Applied Physics. 120, 2, 025701.

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Jan 8 2016, In: Physical Review B. 93, 4, 041201.

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge_0.985Sn_0.015 using photoreflectance spectroscopy

Jo, H. J., Kim, G. H., Kim, J. S., Ryu, M. Y., Yeo, Y. K., Harris, T. R. & Kouvetakis, J., Jan 2016, In: Current Applied Physics. 16, 1, p. 83-87 5 p.

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Optical properties of Ge-rich G e1-x S IX alloys: Compositional dependence of the lowest direct and indirect gaps

Xu, C., Gallagher, J. D., Senaratne, C. L., Menendez, J. & Kouvetakis, J., Mar 9 2016, In: Physical Review B - Condensed Matter and Materials Physics. 93, 12, 125206.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Ultralow Resistivity Ge:Sb heterostructures on Si Using Hydride Epitaxy of Deuterated Stibine and Trigermane

Xu, C., Senaratne, C. L., Sims, P., Kouvetakis, J. & Menendez, J., Sep 14 2016, In: ACS Applied Materials and Interfaces. 8, 36, p. 23810-23819 10 p.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

2015

Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Aug 1 2015, In: Solid-State Electronics. 110, p. 76-82 7 p.

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Crystalline (Al_1-xB_x)PSi₃ and (Al_1-xB_x)AsSi₃ tetrahedral phases via reactions of Al(BH₄)₃ and M(SiH₃)₃ (M = P, As)

Sims, P., Aoki, T., Favaro, R., Wallace, P., White, A., Xu, C., Menendez, J. & Kouvetakis, J., Apr 28 2015, In: Chemistry of Materials. 27, 8, p. 3030-3039 10 p.

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Electroluminescence from Ge_1-_ySn_y diodes with degenerate pn junctions

Gallagher, J. D., Senaratne, C. L., Wallace, P. M., Menendez, J. & Kouvetakis, J., Sep 21 2015, In: Applied Physics Letters. 107, 12, 123507.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

Gallagher, J. D., Senaratne, C. L., Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., Mar 2 2015, In: Applied Physics Letters. 106, 9, 091103.

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Ge_1-x-ySi_xSn_y light emitting diodes on silicon for mid-infrared photonic applications

Gallagher, J. D., Xu, C., Senaratne, C. L., Aoki, T., Wallace, P. M., Kouvetakis, J. & Menendez, J., Oct 7 2015, In: Journal of Applied Physics. 118, 13, 135701.

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

In situ low temperature As-doping of Ge films using As(SiH₃)₃ and As(GeH₃)₃: Fundamental properties and device prototypes

Xu, C., Gallagher, J. D., Wallace, P. M., Senaratne, C. L., Sims, P., Menendez, J. & Kouvetakis, J., Sep 14 2015, In: Semiconductor Science and Technology. 30, 10, 105028.

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Non-conventional routes to SiGe:P/Si(100) materials and devices based on -SiH₃ and -GeH₃ derivatives of phosphorus: Synthesis, electrical performance and optical behavior

Xu, C., Gallagher, J. D., Sims, P., Smith, D., Menendez, J. & Kouvetakis, J., Apr 1 2015, In: Semiconductor Science and Technology. 30, 4, 045007.

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Non-radiative recombination in Ge_1-_ySn_y light emitting diodes: The role of strain relaxation in tuned heterostructure designs

Gallagher, J. D., Senaratne, C. L., Xu, C., Sims, P., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Jun 28 2015, In: Journal of Applied Physics. 117, 24, 245704.

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Temperature-dependent direct transition energy in Ge_0.99Sn_0.01 film grown on Si measured by photoreflectance spectroscopy

Jo, H. J., So, M. G., Kim, J. S., Ryu, M. Y., Yeo, Y. K. & Kouvetakis, J., Sep 30 2015, In: Thin Solid Films. 591, p. 295-300 6 p.

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

2014

Advances in light emission from group-IV alloys via lattice engineering and n-type doping based on custom-designed chemistries

Senaratne, C. L., Gallagher, J. D., Aoki, T., Kouvetakis, J. & Menendez, J., Oct 28 2014, In: Chemistry of Materials. 26, 20, p. 6033-6041 9 p.

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge₁_-_ySn_y alloys

Gallagher, J. D., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Oct 6 2014, In: Applied Physics Letters. 105, 14, 142102.

Research output: Contribution to journal › Article › peer-review

65 Scopus citations

Compositional dependence of the direct and indirect band gaps in Ge_1-ySn_y alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials

Jiang, L., Gallagher, J. D., Senaratne, C. L., Aoki, T., Mathews, J., Kouvetakis, J. & Menendez, J., Nov 1 2014, In: Semiconductor Science and Technology. 29, 11, 115028.

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications

Jiang, L., Xu, C., Gallagher, J. D., Favaro, R., Aoki, T., Menendez, J. & Kouvetakis, J., Apr 22 2014, In: Chemistry of Materials. 26, 8, p. 2522-2531 10 p.

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Electrical characterization studies of p-type Ge, Ge_1-ySn _y, and Si_0.09Ge_0.882Sn_0.028 grown on n-Si substrates

Harris, T. R., Ryu, M. Y., Yeo, Y. K., Beeler, R. T. & Kouvetakis, J., Mar 14 2014, In: Current Applied Physics. 14, SUPPL. 1, p. S123-S128

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Frustrated incomplete donor ionization in ultra-low resistivity germanium films

Xu, C., Senaratne, C. L., Kouvetakis, J. & Menendez, J., Dec 8 2014, In: Applied Physics Letters. 105, 23, 232103.

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Ge_1-_ySn_y (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Senaratne, C. L., Gallagher, J. D., Jiang, L., Aoki, T., Smith, D., Menendez, J. & Kouvetakis, J., Oct 7 2014, In: Journal of Applied Physics. 116, 13, 133509.

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Molecular strategies for configurational sulfur doping of group IV semiconductors grown on Si(100) using S(MH₃)₂ (M = Si,Ge) delivery sources: An experimental and theoretical inquiry

Kouvetakis, J., Favaro, R., Grzybowski, G. J., Senaratne, C., Menendez, J. & Chizmeshya, A., Aug 12 2014, In: Chemistry of Materials. 26, 15, p. 4447-4458 12 p.

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Nanostructure-property control in AlPSi₃/Si(100) semiconductors using direct molecular assembly: Theory meets experiment at the atomic level

Jiang, L., Aoki, T., Smith, D., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Jul 22 2014, In: Chemistry of Materials. 26, 14, p. 4092-4101 10 p.

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)

Harris, T. R., Yeo, Y. K., Ryu, M. Y., Beeler, R. T. & Kouvetakis, J., Sep 14 2014, In: Journal of Applied Physics. 116, 10, 103502.

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Synthesis and optical properties of Sn-rich Ge_{1-X -y}Si _xSn_y materials and devices

Xu, C., Beeler, R. T., Jiang, L., Gallagher, J. D., Favaro, R., Menendez, J. & Kouvetakis, J., Apr 30 2014, In: Thin Solid Films. 557, p. 177-182 6 p.

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

2013

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

Beeler, R. T., Gallagher, J., Xu, C., Jiang, L., Senaratne, C. L., Smith, D., Menendez, J., Chizmeshya, A. & Kouvetakis, J., Nov 15 2013, In: ECS Journal of Solid State Science and Technology. 2, 9, p. Q172-Q177

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Fundamental band gap and direct-indirect crossover in Ge _1-x-ySi_xSn_y alloys

Gallagher, J. D., Xu, C., Jiang, L., Kouvetakis, J. & Menendez, J., Nov 11 2013, In: Applied Physics Letters. 103, 20, 202104.

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication

Grzybowski, G., Chizmeshya, A., Senaratne, C., Menendez, J. & Kouvetakis, J., Sep 14 2013, In: Journal of Materials Chemistry C. 1, 34, p. 5223-5234 12 p.

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Nanoscale assembly of silicon-like [Al(As1_-xN^x)] ^ySi5_-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties

Jiang, L., Sims, P. E., Grzybowski, G., Beeler, R. T., Chizmeshya, A., Smith, D., Kouvetakis, J. & Menendez, J., Jul 31 2013, In: Physical Review B - Condensed Matter and Materials Physics. 88, 4, 045208.

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: The tetragermane case

Xu, C., Beeler, R. T., Jiang, L., Grzybowski, G., Chizmeshya, A., Menendez, J. & Kouvetakis, J., Oct 2013, In: Semiconductor Science and Technology. 28, 10, 105001.

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

John Kouvetakis

Research output

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