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Personal profile

Education/Academic qualification

PHD, University of California-Berkeley

… → 1988

BS, University of California-Berkeley

… → 1984

Fingerprint Dive into the research topics where John Kouvetakis is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 6 Similar Profiles
Chemical vapor deposition Engineering & Materials Science
Semiconductor materials Chemical Compounds
Hydrides Chemical Compounds
Energy gap Engineering & Materials Science
Silicon Chemical Compounds
vapor deposition Physics & Astronomy
Diamond Chemical Compounds
Substrates Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1900 2019

  • 6482 Citations
  • 43 h-Index
  • 204 Article
  • 39 Conference contribution
  • 21 Patent
  • 3 Chapter
1 Citation (Scopus)

Comparison study of temperature dependent direct/indirect bandgap emissions of Ge 1-x-y Si x Sn y and Ge 1-y Sn y grown on Ge buffered Si

Wang, B., Harris, T. R., Hogsed, M. R., Yeo, Y. K., Ryu, M. Y. & Kouvetakis, J., Mar 1 2019, In : Thin Solid Films. 673, p. 63-71 9 p.

Research output: Contribution to journalArticle

Photoluminescence
Energy gap
photoluminescence
Conduction bands
Temperature
1 Citation (Scopus)

Doping dependence of the optical dielectric function in n-type germanium

Xu, C., Kouvetakis, J. & Menendez, J., Feb 28 2019, In : Journal of Applied Physics. 125, 8, 085704.

Research output: Contribution to journalArticle

Open Access
germanium
photoelectronics
optical transition
microelectronics
ellipsometry

Enhanced optical and electrical performance of Ge 1-x Sn x /Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Wang, B., Hogsed, M. R., Harris, T. R., Wallace, P. M. & Kouvetakis, J., Mar 20 2019, In : Semiconductor Science and Technology. 34, 4, 045014.

Research output: Contribution to journalArticle

Hydrogen
passivity
Semiconductor materials
Passivation
hydrogen plasma

Mid-infrared (3-8 μ m) Ge1-ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties

Xu, C., Wallace, P. M., Ringwala, D. A., Chang, L-Y., Poweleit, C. D., Kouvetakis, J. & Menendez, J., May 27 2019, In : Applied Physics Letters. 114, 21, 212104.

Research output: Contribution to journalArticle

optical properties
synthesis
atmospheric windows
low concentrations
lattice parameters
2 Citations (Scopus)

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Wang, B., Fang, Z. Q., Claflin, B., Look, D., Kouvetakis, J. & Yeo, Y. K., May 31 2018, In : Thin Solid Films. 654, p. 77-84 8 p.

Research output: Contribution to journalArticle

Deep level transient spectroscopy
Capacitance measurement
Voltage measurement
Ultrahigh vacuum
Photodiodes

Projects 1994 2022