• 6646 Citations
  • 44 h-Index
1900 …2022
If you made any changes in Pure, your changes will be visible here soon.

Research Output 1900 2019

Filter
Conference contribution
2018

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J. & Menendez, J., Sep 5 2018, IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., p. 35-36 2 p. 8456690

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spontaneous emission
spontaneous emission
Waveguides
Pumps
waveguides
2017

Single-defect hexapole mode GeSn photonic crystal laser: Fabrication and simulation

Bao, S., Qiu, H., Kim, Y., Lin, Y., Ryu, H. Y., Ryu, M. Y., Yeo, Y. K., Kouvetakis, J., Fitzgerald, E., Wang, H., Nam, D. & Tan, C. S., Oct 25 2017, 2017 Conference on Lasers and Electro-Optics, CLEO 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., Vol. 2017-January. p. 1-2 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Strain relaxation
Laser modes
Photonic crystals
Q factors
Electric power utilization
2016
6 Citations (Scopus)

Toward GeSn lasers: Light amplification and stimulated emission in GeSn waveguides at room temperature

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Agha, I., Menendez, J. & Kouvetakis, J., 2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7. 8 ed. Electrochemical Society Inc., Vol. 75. p. 163-176 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Stimulated emission
Amplification
Waveguides
Optical gain
Continuous wave lasers
2015
3 Citations (Scopus)

CMOS compatible in-situ n-type doping of ge using new generation doping agents P(MH3)3 and As(MH3)3 (M=Si, Ge)

Xu, C., Gallagher, J. D., Senaratne, C. L., Sims, P. E., Kouvetakis, J. & Menendez, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 3-15 13 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Spectroscopic ellipsometry
Doping (additives)
Secondary ion mass spectrometry
Carrier concentration
Infrared radiation

Crystalline tetrahedral phases Al1-xBxPSi3 and Al1-xBxAsT3 (T = Si, Ge) Via Reactions of Al(BH4)3 and M(TH3)3 (M = P, As)

Sims, P., Aoki, T., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 83-93 11 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical vapor deposition
Crystalline materials
Aberrations
Molecular beam epitaxy
Diamonds
1 Citation (Scopus)

Doping of direct gap Ge1-ySny Alloys to attain electroluminescence and enhanced photoluminescence

Senaratne, C. L., Gallagher, J. D., Xu, C., Sims, P. E., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 157-164 8 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Photoluminescence
Doping (additives)
Photodiodes
Chemical analysis

Enhanced performance designs of group-IV light emitting diodes for Mid IR photonic applications

Gallagher, J. D., Senaratne, C. L., Xu, C., Wallace, P. M., Menendez, J. & Kouvetakis, J., 2015, ECS Transactions. 14 ed. Electrochemical Society Inc., Vol. 69. p. 147-156 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
Light emitting diodes
Electroluminescence
Fabrication
Dark currents
2014

Direct gap group IV semiconductors for next generation Si-based IR photonics

Kouvetakis, J., Gallagher, J. & Menendez, J., 2014, Materials Research Society Symposium Proceedings. Materials Research Society, Vol. 1666.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
photonics
Semiconductor materials
Photoluminescence
Energy gap

Epitaxy of light emitting SiGeSn materials using novel precursors

Kouvetakis, J. & Menendez, J., 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, p. 143-144 2 p. 6874700

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Optoelectronic devices
2012
2 Citations (Scopus)

GeSn alloys on Si using deuterated stannane and trigermane: Synthesis and Properties

Grzybowski, G., Beeler, R. T., Jiang, L., Smith, D., Chizmeshya, A., Kouvetakis, J. & Menendez, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 865-874 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bending (forming)
Ultrahigh vacuum
Chemical vapor deposition
Photoluminescence
Energy gap
3 Citations (Scopus)

High performance group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys

Beeler, R. T., Menendez, J., Smith, D. & Kouvetakis, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 591-599 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ternary alloys
Photodiodes
Optoelectronic devices
Lattice mismatch
Epilayers

Nano-synthesis approach to the fabrication of monocrystalline silicon-like (III-V)yIV5-2y semiconductors

Chizmeshya, A., Kouvetakis, J., Grzybowski, G., Beeler, R. & Menendez, J., 2012, ECS Transactions. 9 ed. Vol. 50. p. 623-634 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Monocrystalline silicon
Semiconductor materials
Thermochemistry
Fabrication
Chemical analysis
1 Citation (Scopus)

Synthesis and properties of Si-Ge-Sn materials and devices grown by CVD

Kouvetakis, J., Beeler, R. & Menendez, J., 2012, Information Optoelectronics, Nanofabrication and Testing, IONT 2012.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Photodiodes
Chemical vapor deposition
Photoluminescence
Optical properties
2011

Direct gap photoluminescence and electroluminescence in Ge 1-ySny alloys

Roucka, R., Mathews, J., Menendez, J. & Kouvetakis, J., 2011, IEEE International Conference on Group IV Photonics GFP. p. 214-216 3 p. 6053767

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Electroluminescence
Photoluminescence
2010
2 Citations (Scopus)

Germanium p-i-n photodiode on silicon for integrated photonic applications

Mathews, J., Roucka, R., Weng, C., Tolle, J., Menendez, J. & Kouvetakis, J., 2010, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7606. 76061L

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium
Photodiode
Silicon
Photodiodes
Photonics

Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy

Beeler, R., Weng, C., Tolle, J., Roucka, R., Mathews, J., Ahmari, D. A., Menendez, J. & Kouvetakis, J., 2010, ECS Transactions. 6 ed. Vol. 33. p. 941-950 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical properties
Substrates
Cathodoluminescence
Metallorganic chemical vapor deposition
Buffer layers
12 Citations (Scopus)

Near IR photodiodes with tunable absorption edge based on Ge 1-ySny alloys integrated on silicon

Mathews, J., Roucka, R., Weng, C., Beeler, R., Tolle, J., Menendez, J. & Kouvetakis, J., 2010, ECS Transactions. 6 ed. Vol. 33. p. 765-773 9 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photodiodes
Silicon
Optical communication
Heterojunctions
Substrates

Practical strategies for tuning optical, structural and thermal properties in group IV ternary semiconductors

Chizmeshya, A. & Kouvetakis, J., 2010, ECS Transactions. 6 ed. Vol. 33. p. 717-728 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ternary alloys
Lattice constants
Structural properties
Energy gap
Thermodynamic properties
5 Citations (Scopus)

Si-Ge-Sn technologies: From molecules to materials to prototype devices

Kouvetakis, J., Tolle, J., Mathews, J., Roucka, R. & Menendez, J., 2010, ECS Transactions. 6 ed. Vol. 33. p. 615-628 14 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor materials
Molecules
Open systems
Photodetectors
Hydrides
2009
4 Citations (Scopus)

Advanced Si-based semiconductors for energy and photonic applications

Kouvetakis, J., Menendez, J. & Tolle, J., 2009, Solid State Phenomena. Trans Tech Publications Ltd, Vol. 156-158. p. 77-84 8 p. (Solid State Phenomena; vol. 156-158).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
photonics
Semiconductor materials
Thermoelectricity
chemistry
3 Citations (Scopus)

Direct absorption edge in GeSiSn alloys

D'Costa, V. R., Fang, Y. Y., Tolle, J., Kouvetakis, J. & Menendez, J., 2009, AIP Conference Proceedings. Vol. 1199. p. 39-40 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

complement
ellipsometry
1 Citation (Scopus)

Fabrication and properties of optoelectronic SiGeSn alloys integrated on silicon substrates

Kouvetakis, J., 2009, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. p. 211-212 2 p. 5343319

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Optoelectronic devices
Fabrication
Substrates
Thermoelectricity
4 Citations (Scopus)

Transport properties of doped GeSn alloys

D'Costa, V. R., Tolle, J., Xie, J., Menendez, J. & Kouvetakis, J., 2009, AIP Conference Proceedings. Vol. 1199. p. 57-58 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

transport properties
hole mobility
electron mobility
optical transition
electrical measurement
2008
8 Citations (Scopus)

Nanosynthesis of Si-Ge-Sn semiconductors and devices via purpose-built hydride compounds

Kouvetakis, J., Tolle, J., Roucka, R., D'Costa, V. R., Fang, Y. Y., Chizmeshya, A. & Menendez, J., 2008, ECS Transactions. 10 ed. Vol. 16. p. 807-821 15 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hydrides
Semiconductor materials
Photoconducting materials
Fabrication
Quantum cascade lasers
2007
22 Citations (Scopus)

Advances in SiGeSn/Ge technology

Soref, R., Kouvetakis, J. & Menendez, J., 2007, Materials Research Society Symposium Proceedings. Vol. 958. p. 13-24 12 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Energy gap
Lattice constants
Detectors
Semiconductor materials
Chemical cleaning
1 Citation (Scopus)

Advances in Si-Ge-Sn materials science and technology

Kouvetakis, J., Tolle, J., Menendez, J. & D'Costa, V. R., 2007, IEEE International Conference on Group IV Photonics GFP. p. 201-203 3 p. 4347715

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical materials
Silicon
Materials science
Buffer layers
Electron transitions
1 Citation (Scopus)

Photoresponse at 1.55 μm in GeSn epitaxial films grown on Si

Roucka, R., Yu, S. Q., Tolle, J., Fang, Y. Y., Wu, S. N., Menendez, J. & Kouvetakis, J., 2007, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. p. 178-179 2 p. 4382335

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial films
2006
8 Citations (Scopus)

Sn-based group-IV semiconductors on Si: New infrared materials and new templates for mismatched epitaxy

Tolle, J., Roucka, R., D'Costa, V., Menendez, J., Chizmeshya, A. & Kouvetakis, J., 2006, Materials Research Society Symposium Proceedings. Vol. 891. p. 579-584 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Epitaxial growth
Semiconductor materials
Infrared radiation
Energy gap
Buffer layers
2005

Compositional dependence of critical point transitions in Ge 1-xSn x alloys

Cook, C. S., D'Costa, V., Kouvetakis, J., Zollner, S. & Menendez, J., Jun 30 2005, AIP Conference Proceedings. Vol. 772. p. 65-66 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

critical point
optical transition
linearity
deviation
energy
2004

New IR semiconductors in the Si-Ge-Sn system

Kouvetakis, J., Tolle, J. & Menendez, J., 2004, 2004 1st IEEE International Conference on Group IV Photonics. p. 55-57 3 p. ThB2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Photonics
Heterojunctions
Chemical vapor deposition
Energy gap
Semiconductor materials
2002
3 Citations (Scopus)

New Ge-Sn materials with adjustable bandgaps and lattice constants

Bauer, M. R., Tolle, J., Chizmeshya, A., Zollner, S., Menendez, J. & Kouvetakis, J., 2002, Materials Research Society Symposium - Proceedings. Weaver, B. D., Manasreh, M. O., Jagadish, C. & Zollner, S. (eds.). Vol. 744. p. 49-54 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lattice constants
Energy gap
Optical properties
Spectroscopic ellipsometry
Deuterium
1 Citation (Scopus)

Optical vibrational and structural properties of Ge 1-xSn x alloys by UHV-CVD

Taraci, J., Zollner, S., McCartney, M., Menendez, J., Smith, D., Tolle, J., Bauer, M., Duda, E., Edwards, N. V. & Kouvetakis, J., 2002, Materials Research Society Symposium - Proceedings. Jones, E., Manasreh, O., Choquette, K., Friedman, D. & Johnstone, D. (eds.). Vol. 692. p. 631-636 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Structural properties
Chemical vapor deposition
Energy gap
Transmission electron microscopy
Infrared transmission
1998

Application of novel chemical precursors for the preparation of Si-Ge-C heterostructures and superlattices

Nesting, D. C., Kouvetakis, J., Lorentzen, J. & Menendez, J., 1998, Materials Research Society Symposium - Proceedings. MRS, Vol. 533. p. 281-286 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Superlattices
Heterojunctions
Diamond
Chemical analysis
Chemical vapor deposition
1997
4 Citations (Scopus)

New pathways to heteroepitaxial GaN by inorganic CVD synthesis and characterization of related Ga-C-N novel systems

Kouvetakis, J., O'Keeffe, M., Brouseau, L., McMurran, J., Williams, D. & Smith, D., 1997, Materials Research Society Symposium - Proceedings. Ponce, F. A., Moustakas, T. D., Akasaki, I. & Monemar, B. A. (eds.). Materials Research Society, Vol. 449. p. 313-318 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical vapor deposition
Rutherford backscattering spectroscopy
Aluminum Oxide
Sapphire
Carbon

New silicon-carbon materials incorporating Si 4C building blocks

Chandrasekhar, D., Kouvetakis, J., Mc Murran, J., Todd, M. & Smith, D., 1997, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 441. p. 723-728 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Silicon
Carbon
Chemical analysis
Rutherford backscattering spectroscopy
Ultrahigh vacuum
1996
3 Citations (Scopus)

Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

Kouvetakis, J., McMurran, J., Beach, D. B. & Smith, D., 1996, Materials Research Society Symposium - Proceedings. Materials Research Society, Vol. 395. p. 79-84 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Carbon
Ultrahigh vacuum
Stoichiometry
Electron microscopy
Chemical vapor deposition
8 Citations (Scopus)

In situ real time observation of chemical vapor deposition using an environmental transmission electron microscope

Drucker, J., Sharma, R., Weiss, K., Ramakrishna, B. L. & Kouvetakis, J., 1996, Materials Research Society Symposium Proceedings. Vol. 404. p. 75-84 10 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chemical vapor deposition
Electron microscopes
Electron beams
Film growth
Substrates
1995

Influence of precursor chemistry on synthesis of silicon-carbon-germanium alloys

Todd, M., Kouvetakis, J., Matsunaga, P., Chandrasekhar, D. & Smith, D., 1995, Materials Research Society Symposium - Proceedings. Hack, M., Schiff, E. A., Madan, A., Powell, M. & Matsuda, A. (eds.). Materials Research Society, Vol. 377. p. 529-534 6 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Germanium alloys
Silicon
Carbon
Germanium
Diamond
1994

TEM characterization of SiGeC material system

Chandrasekhar, D., Smith, D., Kouvetakis, J. & Robinson, M., 1994, Proceedings - Annual Meeting, Microscopy Society of America. Bailey, G. W. & Garratt-Reed, A. J. (eds.). p. 840-841 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transmission electron microscopy
Ions
Rutherford backscattering spectroscopy
Diffraction patterns
Lattice constants