Hugh Barnaby — Arizona State University

Personal profile

Education/Academic qualification

PHD, Vanderbilt University

… → 2002

MS EE, Vanderbilt University

… → 1999

BA, University of California-Berkeley

… → 1992

Fingerprint Fingerprint is based on mining the text of the experts' scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

2 Similar Profiles

Radiation Engineering & Materials Science

dosage Physics & Astronomy

radiation Physics & Astronomy

Ionizing radiation Engineering & Materials Science

Oxides Engineering & Materials Science

Networks (circuits) Engineering & Materials Science

Metallizing Engineering & Materials Science

Data storage equipment Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1997 2019

2677 Citations
29 h-Index
135 Article
44 Conference contribution
4 Patent
2 Review article
1 More
- 1 Editorial

Evaluation of Single Event Effects in SRAM and RRAM Based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Barnaby, H. & Yu, S., May 22 2019, 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 8720490. (IEEE International Reliability Physics Symposium Proceedings; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Static random access storage

Multilayer neural networks

SPICE

Neural networks

RRAM

Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations

Livingston, I. P., Esqueda, I. S. & Barnaby, H., Oct 1 2019, In : Solid-State Electronics. 160, 107609.

Research output: Contribution to journal › Article

Surface potential

Silicon

SOI (semiconductors)

field effect transistors

insulators

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., Jan 1 2019, In : Faraday Discussions. 213, p. 53-66 14 p.

Research output: Contribution to journal › Article

Crystallization

Metallizing

crystallization

Radiation

dosage

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journal › Article

High electron mobility transistors

Field effect transistors

Oxides

Transistors

Management information systems