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Personal profile

Education/Academic qualification

PHD, Vanderbilt University

… → 2002

MS EE, Vanderbilt University

… → 1999

BA, University of California-Berkeley

… → 1992

Fingerprint Fingerprint is based on mining the text of the experts' scientific documents to create an index of weighted terms, which defines the key subjects of each individual researcher.

  • 2 Similar Profiles
Radiation Engineering & Materials Science
dosage Physics & Astronomy
radiation Physics & Astronomy
Ionizing radiation Engineering & Materials Science
Oxides Engineering & Materials Science
Networks (circuits) Engineering & Materials Science
Metallizing Engineering & Materials Science
Data storage equipment Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1997 2019

Evaluation of Single Event Effects in SRAM and RRAM Based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Barnaby, H. & Yu, S., May 22 2019, 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 8720490. (IEEE International Reliability Physics Symposium Proceedings; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Static random access storage
Multilayer neural networks
SPICE
Neural networks
RRAM
Surface potential
Silicon
SOI (semiconductors)
field effect transistors
insulators

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., Jan 1 2019, In : Faraday Discussions. 213, p. 53-66 14 p.

Research output: Contribution to journalArticle

Crystallization
Metallizing
crystallization
Radiation
dosage

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journalArticle

High electron mobility transistors
Field effect transistors
Oxides
Transistors
Management information systems

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

Fang, R., Livingston, I., Esqueda, I. S., Kozicki, M. & Barnaby, H., Jun 14 2018, In : Journal of Applied Physics. 123, 22, 225701.

Research output: Contribution to journalArticle

dynamic models
CMOS
defects
temperature
semiconductor devices

Projects 2004 2023