Hugh Barnaby

Professor

Professor, IAFSE-ECEE: Electrical Engineering
Professor, IAFSE-ECEE: Connection One (C1)
Professor, Engineering, Ira A. Fulton Schools of (IAFSE)
Professor, IAFSE-CIDSE: Embedded Systems, Consortium for (CES)
Associate Professor, IAFSE-ECEE: Solid State Electronics Research Center (CSSER)
Associate Professor, AINE: Applied Nanoionics, Center for (CANi)

2888 Citations
30 h-Index

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Personal profile

Education/Academic qualification

PHD, Vanderbilt University

… → 2002

MS EE, Vanderbilt University

… → 1999

BA, University of California-Berkeley

… → 1992

Fingerprint Dive into the research topics where Hugh Barnaby is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

2 Similar Profiles

Radiation Engineering & Materials Science

dosage Physics & Astronomy

radiation Physics & Astronomy

Ionizing radiation Engineering & Materials Science

Oxides Engineering & Materials Science

Networks (circuits) Engineering & Materials Science

Data storage equipment Engineering & Materials Science

Metallizing Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1997 2019

2888 Citations
30 h-Index
137 Article
45 Conference contribution
4 Patent
2 Review article
1 More
- 1 Editorial

Evaluation of Single Event Effects in SRAM and RRAM Based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Barnaby, H. & Yu, S., May 22 2019, 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 8720490. (IEEE International Reliability Physics Symposium Proceedings; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Static random access storage

Multilayer neural networks

SPICE

Neural networks

RRAM

Explicit approximation of the surface potential equation of a dynamically depleted silicon-on-insulator MOSFET for performance and reliability simulations

Livingston, I. P., Esqueda, I. S. & Barnaby, H., Oct 1 2019, In : Solid-State Electronics. 160, 107609.

Research output: Contribution to journal › Article

Surface potential

Silicon

SOI (semiconductors)

field effect transistors

insulators

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., Jan 1 2019, In : Faraday Discussions. 213, p. 53-66 14 p.

Research output: Contribution to journal › Article

Crystallization

Metallizing

crystallization

Radiation

dosage

Monolithically Integrated RRAM- And CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning

Yin, S., Seo, J. S., Kim, Y., Han, X., Barnaby, H., Yu, S., Luo, Y., He, W., Sun, X. & Kim, J. J., Nov 1 2019, In : IEEE Micro. 39, 6, p. 54-63 10 p., 8894568.

Research output: Contribution to journal › Article

Data storage equipment

Networks (circuits)

Energy efficiency

Computer peripheral equipment

Computer hardware

Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

Witulski, A. F., Mahadevan, N., Kauppila, J., Karsai, G., Sternberg, A., Schrimpf, R. D., Reed, R. A., Adell, P., Schone, H., Daniel, A., Privat, A. & Barnaby, H., Jul 1 2019, In : IEEE Transactions on Nuclear Science. 66, 7, p. 1634-1641 8 p., 8736527.

Research output: Contribution to journal › Article

Radiation effects

radiation effects

Transistors

transistors

degradation