Hugh Barnaby — Arizona State University

Personal profile

Education/Academic qualification

PHD, Vanderbilt University

… → 2002

MS EE, Vanderbilt University

… → 1999

BA, University of California-Berkeley

… → 1992

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3 Similar Profiles

Radiation Engineering & Materials Science

dosage Physics & Astronomy

radiation Physics & Astronomy

Ionizing radiation Engineering & Materials Science

Oxides Engineering & Materials Science

Metallizing Engineering & Materials Science

Networks (circuits) Engineering & Materials Science

Data storage equipment Engineering & Materials Science

Network Recent external collaboration on country level. Dive into details by clicking on the dots.

Research Output 1997 2019

2613 Citations
28 h-Index
133 Article
43 Conference contribution
4 Patent
2 Review article
1 More
- 1 Editorial

Impact of radiation induced crystallization on programmable metallization cell electrical characteristics and reliability

Gonzalez Velo, Y., Patadia, A., Barnaby, H. & Kozicki, M., Jan 1 2019, In : Faraday Discussions. 213, p. 53-66 14 p.

Research output: Contribution to journal › Article

Crystallization

Metallizing

crystallization

Radiation

dosage

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

Fang, R., Livingston, I., Esqueda, I. S., Kozicki, M. & Barnaby, H., Jun 14 2018, In : Journal of Applied Physics. 123, 22, 225701.

Research output: Contribution to journal › Article

dynamic models

CMOS

defects

temperature

semiconductor devices

Evaluation of Radiation Effects in RRAM based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Taggart, J., Barnaby, H. & Yu, S., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journal › Article

Radiation effects

random access memory

radiation effects

inference

Data storage equipment

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. & Holbert, K., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journal › Article

random access memory

damage

Data storage equipment

dosage

thresholds

2 Citations (Scopus)

Hydrogen Soaking, Displacement-Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Li, X., Yang, J., Fleetwood, D. M., Liu, C., Wei, Y. D., Barnaby, H. & Galloway, K. F., May 15 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journal › Article

junction transistors

Electron irradiation

soaking

Bipolar transistors

electron irradiation