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Research Output

2020

Ionizing radiation tolerance of stacked Si3N4-SiO2 gate insulators for power MOSFETs

Muthuseenu, K., Barnaby, H. J., Patadia, A., Holbert, K. & Privat, A., Jan 2020, In : Microelectronics Reliability. 104, 113554.

Research output: Contribution to journalArticle

Open Access
3 Scopus citations
2019

Evaluation of Single Event Effects in SRAM and RRAM Based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Barnaby, H. & Yu, S., May 22 2019, 2019 IEEE International Reliability Physics Symposium, IRPS 2019. Institute of Electrical and Electronics Engineers Inc., 8720490. (IEEE International Reliability Physics Symposium Proceedings; vol. 2019-March).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Monolithically Integrated RRAM- And CMOS-Based In-Memory Computing Optimizations for Efficient Deep Learning

Yin, S., Seo, J. S., Kim, Y., Han, X., Barnaby, H., Yu, S., Luo, Y., He, W., Sun, X. & Kim, J. J., Nov 1 2019, In : IEEE Micro. 39, 6, p. 54-63 10 p., 8894568.

Research output: Contribution to journalArticle

1 Scopus citations

Simulation of Transistor-Level Radiation Effects on System-Level Performance Parameters

Witulski, A. F., Mahadevan, N., Kauppila, J., Karsai, G., Sternberg, A., Schrimpf, R. D., Reed, R. A., Adell, P., Schone, H., Daniel, A., Privat, A. & Barnaby, H., Jul 1 2019, In : IEEE Transactions on Nuclear Science. 66, 7, p. 1634-1641 8 p., 8736527.

Research output: Contribution to journalArticle

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, X., Fang, R., Yang, C., Fu, K., Fu, H., Chen, H., Yang, T. H., Zhou, J., Montes, J., Kozicki, M., Barnaby, H., Zhang, B. & Zhao, Y., Mar 13 2019, In : Nanotechnology. 30, 21, 215201.

Research output: Contribution to journalArticle

1 Scopus citations

TCAD model for ag-gese3-ni cbram devices

Muthuseenu, K., Hylin, E. C., Barnaby, H. J., Apsangi, P., Kozicki, M. N., Schlenvogt, G. & Townsend, M., Sep 2019, Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019. Driussi, F. (ed.). Institute of Electrical and Electronics Engineers Inc., 8870539. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

Bias temperature instability model using dynamic defect potential for predicting CMOS aging

Fang, R., Livingston, I., Esqueda, I. S., Kozicki, M. & Barnaby, H., Jun 14 2018, In : Journal of Applied Physics. 123, 22, 225701.

Research output: Contribution to journalArticle

Evaluation of Radiation Effects in RRAM based Neuromorphic Computing System for Inference

Ye, Z., Liu, R., Taggart, J., Barnaby, H. & Yu, S., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

2 Scopus citations

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects

Taggart, J. L., Jacobs-Gedrim, R. B., McLain, M. L., Barnaby, H., Bielejec, E. S., Hardy, W., Marinella, M. J., Kozicki, M. & Holbert, K., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

1 Scopus citations

Hydrogen Soaking, Displacement-Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Li, X., Yang, J., Fleetwood, D. M., Liu, C., Wei, Y. D., Barnaby, H. & Galloway, K. F., May 15 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

5 Scopus citations

Impact Ionization and Interface Trap Generation in 28-nm MOSFETs at Cryogenic Temperatures

Yan, X., Wang, H., Barnaby, H. & Esqueda, I. S., Sep 2018, In : IEEE Transactions on Device and Materials Reliability. 18, 3, p. 456-462 7 p., 8434255.

Research output: Contribution to journalArticle

Improved Model for Excess Base Current in Irradiated Lateral PNP Bipolar Junction Transistors

Tolleson, B. S., Adell, P. C., Rax, B., Barnaby, H., Privat, A., Han, X., Mahmud, A. & Livingston, I., Apr 20 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

2 Scopus citations

Multi-scale Modeling of Total Ionizing Dose Effects in Commercial-off-the shelf Parts in Bipolar Technologies

Privat, A., Barnaby, H., Adell, P. C., Tolleson, B. S., Wang, Y., Han, X., Davis, P., Rax, B. R. & Buchheit, T. E., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

2 Scopus citations

Proton Beam Effects on Ge–Se/Ag Thin Films

Nichol, T., Nagy, G., Huszank, R., Tenne, D., Kozicki, M., Barnaby, H., Rajta, I. & Mitkova, M., Jun 2018, In : Physica Status Solidi (B) Basic Research. 255, 6, 1700453.

Research output: Contribution to journalArticle

1 Scopus citations

Training a Neural Network on Analog TaOx RRAM Devices Irradiated with Heavy Ions: Effects on Classification Accuracy Demonstrated with CrossSim

Jacobs-Gedrim, R. B., Hughart, D. R., Agarwal, S., Vizkelethy, G., Bielejec, E. S., Vaandrager, B. L., Swanson, S. E., Knisely, K. E., Taggart, J. L., Barnaby, H. & Marinella, M. J., Jan 1 2018, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

1 Scopus citations
2017

Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration

Li, X., Yang, J., Barnaby, H., Galloway, K. F., Schrimpf, R. D., Fleetwood, D. M. & Liu, C., Jun 1 2017, In : IEEE Transactions on Nuclear Science. 64, 6, p. 1549-1553 5 p., 7929388.

Research output: Contribution to journalArticle

7 Scopus citations

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Chamele, N., Mahmud, A. & Mitkova, M., Oct 31 2017, 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-September. p. 1-4 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

McLain, M. L., Barnaby, H. & Schlenvogt, G., Aug 1 2017, In : IEEE Transactions on Nuclear Science. 64, 8, p. 2235-2241 7 p., 7930407.

Research output: Contribution to journalArticle

4 Scopus citations

In Situ Synaptic Programming of CBRAM in an Ionizing Radiation Environment

Taggart, J. L., Chen, W., Gonzalez Velo, Y., Barnaby, H., Holbert, K. & Kozicki, M., Dec 2 2017, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

3 Scopus citations

Low-Temperature Characterization of Cu-Cu: Silica-Based Programmable Metallization Cell

Chen, W., Chamele, N., Gonzalez Velo, Y., Barnaby, H. & Kozicki, M., Sep 1 2017, In : IEEE Electron Device Letters. 38, 9, p. 1244-1247 4 p., 7999163.

Research output: Contribution to journalArticle

7 Scopus citations

Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Pacheco, J. L., Bielejec, E. S., McLain, M. L., Chamele, N., Mahmud, A. & Mitkova, M., Aug 1 2017, In : IEEE Transactions on Nuclear Science. 64, 8, p. 2300-2306 7 p., 7847370.

Research output: Contribution to journalArticle

3 Scopus citations

Review of radiation effects on ReRAM devices and technology

Gonzalez Velo, Y., Barnaby, H. & Kozicki, M., Jul 3 2017, In : Semiconductor Science and Technology. 32, 8, 083002.

Research output: Contribution to journalReview article

14 Scopus citations

SiO2 based conductive bridging random access memory

Chen, W., Tappertzhofen, S., Barnaby, H. & Kozicki, M., Mar 15 2017, (Accepted/In press) In : Journal of Electroceramics. p. 1-23 23 p.

Research output: Contribution to journalArticle

11 Scopus citations

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Chen, W., Fang, R., Barnaby, H., Balaban, M. B., Gonzalez Velo, Y., Taggart, J. L., Mahmud, A., Holbert, K., Edwards, A. H. & Kozicki, M., Jan 1 2017, In : IEEE Transactions on Nuclear Science. 64, 1, p. 269-276 8 p., 7592933.

Research output: Contribution to journalArticle

9 Scopus citations
2016

A 12-b, 650-MSps time-interleaved pipeline analog to digital converter with 1.5 GHz analog bandwidth for digital beam-forming systems

Nazari, A., Mikkola, E., Jalali-Farahani, B. & Barnaby, H., Oct 1 2016, In : Analog Integrated Circuits and Signal Processing. 89, 1, p. 213-222 10 p.

Research output: Contribution to journalArticle

3 Scopus citations

A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells

Chen, W., Fang, R., Balaban, M. B., Yu, W., Gonzalez Velo, Y., Barnaby, H. & Kozicki, M., May 12 2016, In : Nanotechnology. 27, 25, 255202.

Research output: Contribution to journalArticle

31 Scopus citations

Comments by the Editors

Fleetwood, D., Brown, D., Girard, S., Gerardin, S., Quinn, H., Barnaby, H., Kobayashi, D. & Esqueda, I. S., Aug 1 2016, In : IEEE Transactions on Nuclear Science. 63, 4, p. 1983 1 p., 7544703.

Research output: Contribution to journalEditorial

Conductive bridging random access memory - Materials, devices and applications

Kozicki, M. & Barnaby, H., Oct 5 2016, In : Semiconductor Science and Technology. 31, 11, 113001.

Research output: Contribution to journalReview article

44 Scopus citations

Demonstration of spike timing dependent plasticity in CBRAM devices with silicon neurons

Mahalanabis, D., Sivaraj, M., Chen, W., Shah, S., Barnaby, H., Kozicki, M., Blain Christen, J. & Vrudhula, S., Jul 29 2016, ISCAS 2016 - IEEE International Symposium on Circuits and Systems. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-July. p. 2314-2317 4 p. 7539047

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt

Barnaby, H., Schrimpf, R. D., Galloway, K. F., Li, X., Yang, J. & Liu, C., 2016, In : IEEE Transactions on Nuclear Science. PP, 99, 7586134.

Research output: Contribution to journalArticle

10 Scopus citations

Electron beam effects in Ge–Se thin films and resistance change memory devices

Wolf, K., Ailavajhala, M. S., Tenne, D. A., Barnaby, H., Kozicki, M. & Mitkova, M., Jun 1 2016, In : Emerging Materials Research. 5, 1, p. 126-134 9 p.

Research output: Contribution to journalArticle

3 Scopus citations

Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning

Mahmud, A., Gonzalez Velo, Y., Saremi, M., Barnaby, H., Kozicki, M., Holbert, K., Mitkova, M., Alford, T., Goryll, M., Yu, W., Mahalanabis, D., Chen, W., Chamele, N. & Taggart, J., Jul 18 2016, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

3 Scopus citations

Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO2 Switching Layer

Chen, W., Barnaby, H. & Kozicki, M., May 1 2016, In : IEEE Electron Device Letters. 37, 5, p. 576-579 4 p., 7433974.

Research output: Contribution to journalArticle

4 Scopus citations

Physically Based Predictive Model for Single Event Transients in CMOS Gates

Saremi, M., Privat, A., Barnaby, H. & Clark, L. T., Jun 1 2016, In : IEEE Transactions on Electron Devices. 63, 6, p. 2248-2254 7 p., 7447778.

Research output: Contribution to journalArticle

8 Scopus citations

Radiation hardening by process of CBRAM resistance switching cells

Gonzalez Velo, Y., Mahmud, A., Chen, W., Taggart, J. L., Barnaby, H., Kozicki, M., Ailavajhala, M., Holbert, K. & Mitkova, M., Aug 1 2016, In : IEEE Transactions on Nuclear Science. 63, 4, p. 2145-2151 7 p., 7470296.

Research output: Contribution to journalArticle

14 Scopus citations

Surface-potential-based compact modeling of BTI

Esqueda, I. S. & Barnaby, H., Sep 22 2016, 2016 International Reliability Physics Symposium, IRPS 2016. Institute of Electrical and Electronics Engineers Inc., Vol. 2016-September. p. XT061-XT066 7574648

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

System-level analysis of single event upset susceptibility in RRAM architectures

Liu, R., Barnaby, H. & Yu, S., Nov 11 2016, In : Semiconductor Science and Technology. 31, 12, 124005.

Research output: Contribution to journalArticle

4 Scopus citations

Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells

Chen, W., Barnaby, H. & Kozicki, M., May 1 2016, In : IEEE Electron Device Letters. 37, 5, p. 580-583 4 p., 7429703.

Research output: Contribution to journalArticle

49 Scopus citations
2015

2015 Special Issue of the IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments

Fleetwood, D., Brown, D., Girard, S., Gouker, P., Gerardin, S., Quinn, H. & Barnaby, H., Aug 1 2015, In : IEEE Transactions on Nuclear Science. 62, 4, p. 1439 1 p., 7203240.

Research output: Contribution to journalArticle

1 Scopus citations

2015 Special NSREC Issue of the IEEE Transactions on Nuclear Science Comments by the Editors

Fleetwood, D., Brown, D., Girard, S., Gouker, P., Gerardin, S., Quinn, H. & Barnaby, H., Dec 1 2015, In : IEEE Transactions on Nuclear Science. 62, 6, p. 2378 1 p., 7348752.

Research output: Contribution to journalArticle

Analytical relationship between anion formation and carrier-trap statistics in chalcogenide glass films

Saremi, M., Barnaby, H., Edwards, A. & Kozicki, M., 2015, In : ECS Electrochemistry Letters. 4, 7, p. H29-H31

Research output: Contribution to journalArticle

14 Scopus citations

A nonvolatile sense amplifier flip-flop using programmable metallization cells

Mahalanabis, D., Bharadwaj, V., Barnaby, H., Vrudhula, S. & Kozicki, M., Jun 1 2015, In : IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 5, 2, p. 205-213 9 p., 7113919.

Research output: Contribution to journalArticle

10 Scopus citations

A Study of Gamma-Ray Exposure of Cu–SiO 2 Programmable Metallization Cells

Chen, W., Barnaby, H., Kozicki, M., Edwards, A. H., Gonzalez Velo, Y., Fang, R., Holbert, K., Yu, S. & Yu, W., Nov 9 2015, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

15 Scopus citations

Compact modeling of total ionizing dose and aging effects in MOS technologies

Sanchez Esqueda, I., Barnaby, H. & King, M. P., Aug 1 2015, In : IEEE Transactions on Nuclear Science. 62, 4, p. 1501-1515 15 p., 7128413.

Research output: Contribution to journalArticle

51 Scopus citations

Hydrogen Limits for Total Dose and Dose Rate Response in Linear Bipolar Circuits

Adell, P. C., Rax, B., Esqueda, I. S. & Barnaby, H., Dec 3 2015, (Accepted/In press) In : IEEE Transactions on Nuclear Science.

Research output: Contribution to journalArticle

7 Scopus citations

Improved model for increased surface recombination current in irradiated bipolar junction transistors

Barnaby, H., Vermeire, B. & Campola, M. J., Aug 1 2015, In : IEEE Transactions on Nuclear Science. 62, 4, p. 1658-1664 7 p., 7182367.

Research output: Contribution to journalArticle

12 Scopus citations

Investigation of single-bit and multiple-bit upsets in oxide RRAM-based 1T1R and crossbar memory arrays

Liu, R., Mahalanabis, D., Barnaby, H. & Yu, S., Oct 1 2015, In : IEEE Transactions on Nuclear Science. 62, 5, p. 2294-2301 8 p., 7274484.

Research output: Contribution to journalArticle

19 Scopus citations