TY - GEN
T1 - Variable frequency microwave induced low temperature dopant activation in ion implanted silicon
AU - Alford, Terry
AU - Ahmad, Iftikhar
AU - Hubbard, Robert
PY - 2009
Y1 - 2009
N2 - Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.
AB - Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.
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U2 - 10.1109/RTP.2009.5373441
DO - 10.1109/RTP.2009.5373441
M3 - Conference contribution
AN - SCOPUS:77951438779
SN - 9781424438150
T3 - 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
BT - 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
T2 - 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
Y2 - 29 September 2009 through 2 October 2009
ER -