Abstract

Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.

Original languageEnglish (US)
Title of host publication17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
DOIs
StatePublished - 2009
Event17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 - Albany, NY, United States
Duration: Sep 29 2009Oct 2 2009

Other

Other17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
CountryUnited States
CityAlbany, NY
Period9/29/0910/2/09

Fingerprint

Microwave frequencies
Silicon
Chemical activation
Doping (additives)
Ions
Regain
Microwave heating
Arsenic
Ion implantation
Temperature
Spectroscopy
Transmission electron microscopy
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Alford, T., Ahmad, I., & Hubbard, R. (2009). Variable frequency microwave induced low temperature dopant activation in ion implanted silicon. In 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 [5373441] https://doi.org/10.1109/RTP.2009.5373441

Variable frequency microwave induced low temperature dopant activation in ion implanted silicon. / Alford, Terry; Ahmad, Iftikhar; Hubbard, Robert.

17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009. 5373441.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alford, T, Ahmad, I & Hubbard, R 2009, Variable frequency microwave induced low temperature dopant activation in ion implanted silicon. in 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009., 5373441, 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009, Albany, NY, United States, 9/29/09. https://doi.org/10.1109/RTP.2009.5373441
Alford T, Ahmad I, Hubbard R. Variable frequency microwave induced low temperature dopant activation in ion implanted silicon. In 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009. 5373441 https://doi.org/10.1109/RTP.2009.5373441
Alford, Terry ; Ahmad, Iftikhar ; Hubbard, Robert. / Variable frequency microwave induced low temperature dopant activation in ion implanted silicon. 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009.
@inproceedings{bcf4c7f2a9824002ad45441282c0fc04,
title = "Variable frequency microwave induced low temperature dopant activation in ion implanted silicon",
abstract = "Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.",
author = "Terry Alford and Iftikhar Ahmad and Robert Hubbard",
year = "2009",
doi = "10.1109/RTP.2009.5373441",
language = "English (US)",
isbn = "9781424438150",
booktitle = "17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009",

}

TY - GEN

T1 - Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

AU - Alford, Terry

AU - Ahmad, Iftikhar

AU - Hubbard, Robert

PY - 2009

Y1 - 2009

N2 - Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.

AB - Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.

UR - http://www.scopus.com/inward/record.url?scp=77951438779&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951438779&partnerID=8YFLogxK

U2 - 10.1109/RTP.2009.5373441

DO - 10.1109/RTP.2009.5373441

M3 - Conference contribution

AN - SCOPUS:77951438779

SN - 9781424438150

BT - 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009

ER -