Variable frequency microwave induced low temperature dopant activation in ion implanted silicon

Terry Alford, Iftikhar Ahmad, Robert Hubbard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Variable frequency microwave (VFM) anneals are used to activate ion implanted dopants and regrow the damaged silicon at temperatures between 500-550 °C. Four-point-probe measurements are used to monitor the extent of dopant activation. Ion channeling analysis reveals that VFM heating removes the Si damage that results from arsenic ion implantation. Transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after mirowave processing. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to a conventional 900 °C 30 sec rapid thermal anneal.

Original languageEnglish (US)
Title of host publication17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
DOIs
StatePublished - Dec 1 2009
Event17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 - Albany, NY, United States
Duration: Sep 29 2009Oct 2 2009

Publication series

Name17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009

Other

Other17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
CountryUnited States
CityAlbany, NY
Period9/29/0910/2/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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