Valence-mending passivation of Si(100) surface: Principle, practice and application

Engineering & Materials Science

• Passivation 100%
• Surface states 59%
• Dangling bonds 50%
• Metals 26%
• Tellurium 22%
• Selenium 21%
• Molecular beam epitaxy 21%
• Transition metals 20%
• Nanoelectronics 19%
• Fluorine 19%
• Monolayers 18%
• Chlorine 16%
• Semiconductor devices 16%
• Chemical vapor deposition 16%
• Optoelectronic devices 16%
• Energy gap 15%
• Atoms 14%
• Sulfur 13%

Chemical Compounds

• Chemical Passivation 83%
• Schottky Barrier 56%
• Surface State 49%
• Dangling Bond 36%
• Surface 26%
• Application 26%
• Metal 18%
• Optoelectronics 12%
• Fluorine Atom 12%
• Chlorine 12%
• Semiconductor 10%
• Monolayer 10%
• Transition Element 9%

Physics & Astronomy

• passivity 76%
• valence 60%
• metals 14%
• tellurium 10%
• selenium 10%
• chlorine 9%
• semiconductor devices 9%
• fluorine 9%
• optoelectronic devices 9%
• sulfur 8%
• transition metals 7%
• vapor deposition 7%
• atoms 4%