Valence-mending passivation of Si(100) surface

Principle, practice and application

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si(100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si(100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si(100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si(100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si(100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si(100) is suppressed up to 500˚C, and the thermally-stable record Schottky barriers enable theirapplications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si(100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.

Original languageEnglish (US)
Title of host publicationSolid State Phenomena
PublisherTrans Tech Publications Ltd
Pages51-60
Number of pages10
Volume242
ISBN (Print)9783038356080
DOIs
StatePublished - 2016
Event16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015 - Bad Staffelstein, Germany
Duration: Sep 20 2015Sep 25 2015

Publication series

NameSolid State Phenomena
Volume242
ISSN (Electronic)16629779

Other

Other16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015
CountryGermany
CityBad Staffelstein
Period9/20/159/25/15

Fingerprint

Passivation
passivity
valence
Surface states
Dangling bonds
Metals
Tellurium
Nanoelectronics
Fluorine
Chlorine
Selenium
Semiconductor devices
Sulfur
Molecular beam epitaxy
Optoelectronic devices
metals
Transition metals
Chemical vapor deposition
Monolayers
Energy gap

Keywords

  • Dangling bond
  • Metal silicon junction
  • Passivation
  • Schottky barrier
  • Selenium
  • Silicon (100) surface
  • Sulfur
  • Surface state
  • Transition metal dichalcogenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Tao, M. (2016). Valence-mending passivation of Si(100) surface: Principle, practice and application. In Solid State Phenomena (Vol. 242, pp. 51-60). (Solid State Phenomena; Vol. 242). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.242.51

Valence-mending passivation of Si(100) surface : Principle, practice and application. / Tao, Meng.

Solid State Phenomena. Vol. 242 Trans Tech Publications Ltd, 2016. p. 51-60 (Solid State Phenomena; Vol. 242).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tao, M 2016, Valence-mending passivation of Si(100) surface: Principle, practice and application. in Solid State Phenomena. vol. 242, Solid State Phenomena, vol. 242, Trans Tech Publications Ltd, pp. 51-60, 16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015, Bad Staffelstein, Germany, 9/20/15. https://doi.org/10.4028/www.scientific.net/SSP.242.51
Tao M. Valence-mending passivation of Si(100) surface: Principle, practice and application. In Solid State Phenomena. Vol. 242. Trans Tech Publications Ltd. 2016. p. 51-60. (Solid State Phenomena). https://doi.org/10.4028/www.scientific.net/SSP.242.51
Tao, Meng. / Valence-mending passivation of Si(100) surface : Principle, practice and application. Solid State Phenomena. Vol. 242 Trans Tech Publications Ltd, 2016. pp. 51-60 (Solid State Phenomena).
@inproceedings{8c23e4b2edae4ec3bb018175152c8f8e,
title = "Valence-mending passivation of Si(100) surface: Principle, practice and application",
abstract = "Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si(100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99{\%} of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1{\%}. Valence-mending passivation of Si(100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si(100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si(100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si(100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si(100) is suppressed up to 500˚C, and the thermally-stable record Schottky barriers enable theirapplications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si(100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.",
keywords = "Dangling bond, Metal silicon junction, Passivation, Schottky barrier, Selenium, Silicon (100) surface, Sulfur, Surface state, Transition metal dichalcogenide",
author = "Meng Tao",
year = "2016",
doi = "10.4028/www.scientific.net/SSP.242.51",
language = "English (US)",
isbn = "9783038356080",
volume = "242",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "51--60",
booktitle = "Solid State Phenomena",

}

TY - GEN

T1 - Valence-mending passivation of Si(100) surface

T2 - Principle, practice and application

AU - Tao, Meng

PY - 2016

Y1 - 2016

N2 - Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si(100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si(100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si(100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si(100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si(100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si(100) is suppressed up to 500˚C, and the thermally-stable record Schottky barriers enable theirapplications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si(100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.

AB - Surface states have hindered and degraded many semiconductor devices since the Bardeen era. Surface states originate from dangling bonds on the surface. This paper discusses a generic solution to surface states, i.e. valence-mending passivation. For the Si(100) surface, a single atomic layer of valence-mending sulfur, selenium or tellurium can terminate ~99% of the dangling bonds, while group VII fluorine or chlorine can terminate the remaining 1%. Valence-mending passivation of Si(100) has been demonstrated using CVD, MBE and solution passivation. The keys to valence-mending passivation include an atomically-clean Si(100) surface for passivation and precisely one monolayer of valence-mending atoms on the surface. The passivated surface exhibits unprecedented properties. Electronically the Schottky barrier height between various metals and valence-mended Si(100) now follows more closely the Mott-Schottky theory. With metals of extreme workfunctions, new records for low and high Schottky barriers are created on Si(100). The highest barrier so far is 1.14 eV, i.e. a larger-than-bandgap barrier, and the lowest barrier is below 0.08 eV and potentially negative. Chemically silicidation between metal and valence-mended Si(100) is suppressed up to 500˚C, and the thermally-stable record Schottky barriers enable theirapplications in nanoelectronic, optoelectronic and photovoltaic devices. Another application is transition metal dichalcogenides. Valence-mended Si(100) is an ideal starting surface for growth of dichalcogenides, as it provides only van der Waals bonding to the dichalcogenide.

KW - Dangling bond

KW - Metal silicon junction

KW - Passivation

KW - Schottky barrier

KW - Selenium

KW - Silicon (100) surface

KW - Sulfur

KW - Surface state

KW - Transition metal dichalcogenide

UR - http://www.scopus.com/inward/record.url?scp=84953924069&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84953924069&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.242.51

DO - 10.4028/www.scientific.net/SSP.242.51

M3 - Conference contribution

SN - 9783038356080

VL - 242

T3 - Solid State Phenomena

SP - 51

EP - 60

BT - Solid State Phenomena

PB - Trans Tech Publications Ltd

ER -