TRANSIENT ENHANCED DIFFUSION IN B** plus AND P** plus IMPLANTED SILICON.

Chemical Compounds

• Crystal Point Defect 100%
• Doping Material 68%
• Implanted Ion 54%
• Amorphous Silicon 52%
• Diffusion 47%
• Ion Implantation 47%
• Interstitial 40%
• Diffusion Coefficient 33%
• Heat Treatment 32%
• Phosphorus(.) 32%

Engineering & Materials Science

• Point defects 79%
• Doping (additives) 57%
• Rapid thermal processing 41%
• System-in-package 35%
• Amorphous silicon 35%
• Ion implantation 35%
• Phosphorus 31%
• Crystalline materials 27%
• Ions 23%
• Heat treatment 22%
• Temperature 20%

Physics & Astronomy

• point defects 73%
• deactivation 42%
• phosphorus 37%
• amorphous silicon 35%
• ion implantation 35%
• interstitials 33%
• diffusion coefficient 31%
• heat treatment 31%
• ions 18%
• temperature 11%