TRANSIENT ENHANCED DIFFUSION IN B** plus AND P** plus IMPLANTED SILICON.

S. J. Pennycook, R. J. Culbertson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Authors report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsMichael O. Thompson, S.Thomas Picraux, James S. Williams
PublisherMaterials Research Soc
Pages379-384
Number of pages6
ISBN (Print)0931837405
StatePublished - Dec 1 1987
Externally publishedYes
EventBeam-Solid Interact and Transient Processes - Boston, MA, USA
Duration: Dec 1 1986Dec 4 1986

Publication series

NameMaterials Research Society Symposia Proceedings
Volume74
ISSN (Print)0272-9172

Other

OtherBeam-Solid Interact and Transient Processes
CityBoston, MA, USA
Period12/1/8612/4/86

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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