TRANSIENT ENHANCED DIFFUSION IN B** plus AND P** plus IMPLANTED SILICON.

S. J. Pennycook; R. J. Culbertson

TRANSIENT ENHANCED DIFFUSION IN B plus AND P plus IMPLANTED SILICON.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Authors report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

Original language	English (US)
Title of host publication	Materials Research Society Symposia Proceedings
Editors	Michael O. Thompson, S.Thomas Picraux, James S. Williams
Publisher	Materials Research Soc
Pages	379-384
Number of pages	6
ISBN (Print)	0931837405
State	Published - Dec 1 1987
Externally published	Yes
Event	Beam-Solid Interact and Transient Processes - Boston, MA, USA Duration: Dec 1 1986 → Dec 4 1986

Publication series

Name	Materials Research Society Symposia Proceedings
Volume	74
ISSN (Print)	0272-9172

Other

Other	Beam-Solid Interact and Transient Processes
City	Boston, MA, USA
Period	12/1/86 → 12/4/86

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

TRANSIENT ENHANCED DIFFUSION IN B** plus AND P** plus IMPLANTED SILICON. / Pennycook, S. J.; Culbertson, R. J.
Materials Research Society Symposia Proceedings. ed. / Michael O. Thompson; S.Thomas Picraux; James S. Williams. Materials Research Soc, 1987. p. 379-384 (Materials Research Society Symposia Proceedings; Vol. 74).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pennycook, SJ & Culbertson, RJ 1987, TRANSIENT ENHANCED DIFFUSION IN B** plus AND P** plus IMPLANTED SILICON. in MO Thompson, ST Picraux & JS Williams (eds), Materials Research Society Symposia Proceedings. Materials Research Society Symposia Proceedings, vol. 74, Materials Research Soc, pp. 379-384, Beam-Solid Interact and Transient Processes, Boston, MA, USA, 12/1/86.

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N2 - Authors report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

AB - Authors report the transient enhanced diffusion of supersaturated phosphorus in ion-implanted SPE grown Si. Precipitation proceeds rapidly to a metastable SiP phase, which can be converted to an orthorhombic form or redissolved by subsequent heat treatment. The effects are strongly temperature dependent, and consistent with the trapped interstitial model. The behavior of different dopants follows their relative interstitialcy diffusion coefficients. The results suggest that ion implantation induced point defects dominate over thermally activated point defects during low temperature and certain rapid thermal processing, controlling dopant deactivation and diffusion in crystalline or amorphous silicon, and can also affect the SPE growth rate.

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