Thermodynamic behavior of the Si-H system and its role in Si-CVD from SiH4

Meng Tao, Lee P. Hunt

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Thermodynamic calculations of the Si-H system were performed at typical chemical vapor deposition conditions of total pressure, partial pressure of SiH4, ambient, and temperature. Effects of the conditions on the equilibria of the system were examined, and homogeneous reaction mechanisms in the system were qualitatively discussed. The main conclusions include that Si deposition at low temperatures is due to SiH4 alone and high-temperature film deposition is dominated by gaseous silane intermediates produced through homogeneous reactions of SiH4. As the homogeneous reactions develop, homogeneous nucleation of Si2 occurs. Both inert ambient and low pressure promote the homogeneous reactions.

Original languageEnglish (US)
Pages (from-to)806-809
Number of pages4
JournalJournal of the Electrochemical Society
Volume139
Issue number3
StatePublished - Mar 1992
Externally publishedYes

Fingerprint

Chemical vapor deposition
vapor deposition
Thermodynamics
thermodynamics
Silanes
Partial pressure
Temperature
Nucleation
silanes
partial pressure
low pressure
nucleation
temperature

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Thermodynamic behavior of the Si-H system and its role in Si-CVD from SiH4 . / Tao, Meng; Hunt, Lee P.

In: Journal of the Electrochemical Society, Vol. 139, No. 3, 03.1992, p. 806-809.

Research output: Contribution to journalArticle

@article{1c1ce377a25449deba118ba6850cabcb,
title = "Thermodynamic behavior of the Si-H system and its role in Si-CVD from SiH4",
abstract = "Thermodynamic calculations of the Si-H system were performed at typical chemical vapor deposition conditions of total pressure, partial pressure of SiH4, ambient, and temperature. Effects of the conditions on the equilibria of the system were examined, and homogeneous reaction mechanisms in the system were qualitatively discussed. The main conclusions include that Si deposition at low temperatures is due to SiH4 alone and high-temperature film deposition is dominated by gaseous silane intermediates produced through homogeneous reactions of SiH4. As the homogeneous reactions develop, homogeneous nucleation of Si2 occurs. Both inert ambient and low pressure promote the homogeneous reactions.",
author = "Meng Tao and Hunt, {Lee P.}",
year = "1992",
month = "3",
language = "English (US)",
volume = "139",
pages = "806--809",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "3",

}

TY - JOUR

T1 - Thermodynamic behavior of the Si-H system and its role in Si-CVD from SiH4

AU - Tao, Meng

AU - Hunt, Lee P.

PY - 1992/3

Y1 - 1992/3

N2 - Thermodynamic calculations of the Si-H system were performed at typical chemical vapor deposition conditions of total pressure, partial pressure of SiH4, ambient, and temperature. Effects of the conditions on the equilibria of the system were examined, and homogeneous reaction mechanisms in the system were qualitatively discussed. The main conclusions include that Si deposition at low temperatures is due to SiH4 alone and high-temperature film deposition is dominated by gaseous silane intermediates produced through homogeneous reactions of SiH4. As the homogeneous reactions develop, homogeneous nucleation of Si2 occurs. Both inert ambient and low pressure promote the homogeneous reactions.

AB - Thermodynamic calculations of the Si-H system were performed at typical chemical vapor deposition conditions of total pressure, partial pressure of SiH4, ambient, and temperature. Effects of the conditions on the equilibria of the system were examined, and homogeneous reaction mechanisms in the system were qualitatively discussed. The main conclusions include that Si deposition at low temperatures is due to SiH4 alone and high-temperature film deposition is dominated by gaseous silane intermediates produced through homogeneous reactions of SiH4. As the homogeneous reactions develop, homogeneous nucleation of Si2 occurs. Both inert ambient and low pressure promote the homogeneous reactions.

UR - http://www.scopus.com/inward/record.url?scp=0026839677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026839677&partnerID=8YFLogxK

M3 - Article

VL - 139

SP - 806

EP - 809

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 3

ER -