The Thermodynamic Behavior of the Si-H System and Its Role in Si-CVD from SiH4

Meng Tao, Lee P. Hunt

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Thermodynamic calculations of the Si-H system were performed at typical chemical vapor deposition conditions of total pressure, partial pressure of SiH4, ambient, and temperature. Effects of the conditions on the equilibria of the system were examined, and homogeneous reaction mechanisms in the system were qualitatively discussed. The main conclusions include that Si deposition at low temperatures is due to SiH4 alone and high-temperature film deposition is dominated by gaseous silane intermediates produced through homogeneous reactions of SiH4. As the homogeneous reactions develop, homogeneous nucleation of Si3 occurs. Both inert ambient and low pressure promote the homogeneous reactions.

Original languageEnglish (US)
Pages (from-to)806-809
Number of pages4
JournalJournal of the Electrochemical Society
Volume139
Issue number3
DOIs
StatePublished - Mar 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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