The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication

Michael Kozicki, J. Allgair, A. Jenkins-Gray, D. K. Ferry, T. K. Whidden

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We review recent results in nanolithography and nanofabrication using electron beam patterning by SEM and STM and chemically enhanced vapor etching (CEVE). This process has successfully produced robust silicon dioxide lithographic masks which have been used in a variety of etching, selective area reaction, and lift-off processes. Pattern transfer to silicon and the formation of nanoscale conductors are discussed. The use of self-assembled monolayers of various organic acids is shown to have potential as monolayer resists in combination with CEVE.

Original languageEnglish (US)
Pages (from-to)318-322
Number of pages5
JournalPhysica B: Condensed Matter
Volume227
Issue number1-4
StatePublished - Sep 1996

Fingerprint

Electron beams
Etching
Vapors
etching
electron beams
vapors
Fabrication
fabrication
Nanolithography
nanofabrication
Organic acids
Self assembled monolayers
Silicon
Nanotechnology
Silicon Dioxide
Masks
Monolayers
masks
conductors
Silica

Keywords

  • CEVE
  • Electron beam
  • Nanofabrication
  • Nanolithography
  • Stm patterning

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication. / Kozicki, Michael; Allgair, J.; Jenkins-Gray, A.; Ferry, D. K.; Whidden, T. K.

In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 318-322.

Research output: Contribution to journalArticle

Kozicki, M, Allgair, J, Jenkins-Gray, A, Ferry, DK & Whidden, TK 1996, 'The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication', Physica B: Condensed Matter, vol. 227, no. 1-4, pp. 318-322.
Kozicki, Michael ; Allgair, J. ; Jenkins-Gray, A. ; Ferry, D. K. ; Whidden, T. K. / The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication. In: Physica B: Condensed Matter. 1996 ; Vol. 227, No. 1-4. pp. 318-322.
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