The use of electron beam exposure and chemically enhanced vapor etching of SiO₂ for nanoscale fabrication

We review recent results in nanolithography and nanofabrication using electron beam patterning by SEM and STM and chemically enhanced vapor etching (CEVE). This process has successfully produced robust silicon dioxide lithographic masks which have been used in a variety of etching, selective area reaction, and lift-off processes. Pattern transfer to silicon and the formation of nanoscale conductors are discussed. The use of self-assembled monolayers of various organic acids is shown to have potential as monolayer resists in combination with CEVE.