The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Nadia Rezzak; Michael L. Alles; Ronald D. Schrimpf; Sarah Kalemeris; Lloyd W. Massengill; John Sochacki; Hugh Barnaby

doi:10.1016/j.microrel.2010.12.013

The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh Barnaby

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The sensitivity of radiation-induced source-drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.

Original language	English (US)
Pages (from-to)	889-894
Number of pages	6
Journal	Microelectronics Reliability
Volume	51
Issue number	5
DOIs	https://doi.org/10.1016/j.microrel.2010.12.013
State	Published - May 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.microrel.2010.12.013

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title = "The sensitivity of radiation-induced leakage to STI topology and sidewall doping",

abstract = "The sensitivity of radiation-induced source-drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.",

author = "Nadia Rezzak and Alles, {Michael L.} and Schrimpf, {Ronald D.} and Sarah Kalemeris and Massengill, {Lloyd W.} and John Sochacki and Hugh Barnaby",

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AU - Rezzak, Nadia

AU - Alles, Michael L.

AU - Schrimpf, Ronald D.

AU - Kalemeris, Sarah

AU - Massengill, Lloyd W.

AU - Sochacki, John

AU - Barnaby, Hugh

N1 - Funding Information: This work was sponsored by the DTRA through The Radiation Hardened Focus Center, SUNY Albany, and Office of Naval Research.

PY - 2011/5

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N2 - The sensitivity of radiation-induced source-drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.

AB - The sensitivity of radiation-induced source-drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.

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The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Abstract

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