The sensitivity of radiation-induced leakage to STI topology and sidewall doping

Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh Barnaby

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The sensitivity of radiation-induced source-drain leakage to the amount of recess in the shallow-trench isolation (STI) of CMOS technologies is reported. The impact of the doping profile along the STI sidewall on the magnitude of the leakage current is quantified. The sensitivity of the radiation-induced leakage current to these parameters provides insight into how process variability is manifested as variations in the radiation response.

Original languageEnglish (US)
Pages (from-to)889-894
Number of pages6
JournalMicroelectronics Reliability
Volume51
Issue number5
DOIs
StatePublished - May 1 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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