The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

Original languageEnglish (US)
Pages (from-to)127-133
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume233
Issue number1
DOIs
StatePublished - Sep 2002

Fingerprint

Focused ion beams
Transconductance
MOSFET devices
Threshold voltage
Carrier concentration
field effect transistors
Degradation
transconductance
threshold voltage
ion beams
inclusions
degradation
oxides
shift
Oxide semiconductors
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices. / Vasileska, Dragica.

In: Physica Status Solidi (B) Basic Research, Vol. 233, No. 1, 09.2002, p. 127-133.

Research output: Contribution to journalArticle

@article{6fa17f73679545f48fee73f15c01bfef,
title = "The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices",
abstract = "We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.",
author = "Dragica Vasileska",
year = "2002",
month = "9",
doi = "10.1002/1521-3951(200209)233:1<127::AID-PSSB127>3.0.CO;2-R",
language = "English (US)",
volume = "233",
pages = "127--133",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices

AU - Vasileska, Dragica

PY - 2002/9

Y1 - 2002/9

N2 - We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

AB - We investigate quantum mechanical space quantization effects in conventional MOSFET devices and asymmetric device structure fabricated via focused ion beam technique (FIBMOS device). We find that the inclusion of the quantum mechanical space-quantization effects along the growth direction gives rise to larger average displacement of the carriers from the semiconductor-oxide interface and reduced sheet electron density. This, in turn, leads to threshold voltage shift on the order of 150 to 200 mV, which affects the magnitude of the on-state current and gives rise to transconductance degradation.

UR - http://www.scopus.com/inward/record.url?scp=0036732245&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036732245&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200209)233:1<127::AID-PSSB127>3.0.CO;2-R

DO - 10.1002/1521-3951(200209)233:1<127::AID-PSSB127>3.0.CO;2-R

M3 - Article

AN - SCOPUS:0036732245

VL - 233

SP - 127

EP - 133

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -