The role of quantization effects on the operation of 50 nm MOSFET and 250 nm FIBMOS devices

Chemical Compounds

• Transconductance 100%
• Ion Beam 71%
• Electron Density 59%
• Displacement 53%
• Voltage 47%

Engineering & Materials Science

• Carrier concentration 46%
• Focused ion beams 45%
• Transconductance 38%
• Oxide semiconductors 38%
• MOSFET devices 37%
• Threshold voltage 35%
• Degradation 22%

Physics & Astronomy

• field effect transistors 50%
• transconductance 23%
• threshold voltage 20%
• inclusions 17%
• ion beams 16%
• oxides 13%
• shift 13%