The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li; Q. Y. Wei; A. M. Fischer; J. Y. Huang; Y. U. Huang; Fernando Ponce; J. P. Liu; Z. Lochner; J. H. Ryou; R. D. Dupuis

doi:10.1063/1.4789758

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, Fernando Ponce, J. P. Liu, Z. Lochner, J. H. Ryou, R. D. Dupuis

Physics

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24 Scopus citations

Abstract

The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In_0.03Ga_0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.

Original language	English (US)
Article number	041115
Journal	Applied Physics Letters
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.4789758
State	Published - Jan 28 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4789758

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@article{e8ed011df0744d619e0299894b897c82,

title = "The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells",

abstract = "The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.",

author = "T. Li and Wei, {Q. Y.} and Fischer, {A. M.} and Huang, {J. Y.} and Huang, {Y. U.} and Fernando Ponce and Liu, {J. P.} and Z. Lochner and Ryou, {J. H.} and Dupuis, {R. D.}",

note = "Funding Information: The authors gratefully acknowledge support from the DARPA VIGIL Program (Contract No. FA8718-08-C-0006).",

year = "2013",

month = jan,

day = "28",

doi = "10.1063/1.4789758",

language = "English (US)",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

AU - Li, T.

AU - Wei, Q. Y.

AU - Fischer, A. M.

AU - Huang, J. Y.

AU - Huang, Y. U.

AU - Ponce, Fernando

AU - Liu, J. P.

AU - Lochner, Z.

AU - Ryou, J. H.

AU - Dupuis, R. D.

N1 - Funding Information: The authors gratefully acknowledge support from the DARPA VIGIL Program (Contract No. FA8718-08-C-0006).

PY - 2013/1/28

Y1 - 2013/1/28

N2 - The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.

AB - The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.

UR - http://www.scopus.com/inward/record.url?scp=84873596412&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873596412&partnerID=8YFLogxK

U2 - 10.1063/1.4789758

DO - 10.1063/1.4789758

M3 - Article

AN - SCOPUS:84873596412

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041115

ER -

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Abstract

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