The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, Fernando Ponce, J. P. Liu, Z. Lochner, J. H. Ryou, R. D. Dupuis

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Abstract

The electronic and optical properties of visible InGaN quantum-well (QW) structures grown on In0.03Ga0.97N underlayers have been investigated. A significant improvement of the QW emission is observed as a result of the insertion of the underlayers, which is associated with blueshift in the emission energy, reduced recombination lifetime, increased spatial homogeneity in the QW luminescence, and weaker internal fields inside the QWs. These are explained by partial strain relaxation evidenced by reciprocal space mapping of the X-ray diffraction intensity. Electrostatic potential profiles obtained by electron holography provide evidence for enhanced carrier injection by tunneling from the underlayer into the first QW.

Original languageEnglish (US)
Article number041115
JournalApplied Physics Letters
Volume102
Issue number4
DOIs
StatePublished - Jan 28 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Li, T., Wei, Q. Y., Fischer, A. M., Huang, J. Y., Huang, Y. U., Ponce, F., Liu, J. P., Lochner, Z., Ryou, J. H., & Dupuis, R. D. (2013). The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells. Applied Physics Letters, 102(4), [041115]. https://doi.org/10.1063/1.4789758