The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, Fernando Ponce, J. P. Liu, Z. Lochner, J. H. Ryou, R. D. Dupuis

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Fingerprint

Dive into the research topics of 'The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells'. Together they form a unique fingerprint.

Physics & Astronomy