The advanced unified defect model and its applications

W. E. Spicer; T. Kendelewicz; N. Newman; R. Cao; C. McCants; K. Miyano; I. Lindau; Z. Liliental-Weber; E. R. Weber

doi:10.1016/0169-4332(88)90411-4

The advanced unified defect model and its applications

W. E. Spicer, T. Kendelewicz, N. Newman, R. Cao, C. McCants, K. Miyano, I. Lindau, Z. Liliental-Weber, E. R. Weber

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the As_Ga anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the As_Ga antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB₆/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of As_Ga antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

Original language	English (US)
Pages (from-to)	1009-1029
Number of pages	21
Journal	Applied Surface Science
Volume	33-34
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(88)90411-4
State	Published - Sep 1988
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "The advanced unified defect model and its applications",

abstract = "The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.",

author = "Spicer, {W. E.} and T. Kendelewicz and N. Newman and R. Cao and C. McCants and K. Miyano and I. Lindau and Z. Liliental-Weber and Weber, {E. R.}",

year = "1988",

month = sep,

doi = "10.1016/0169-4332(88)90411-4",

language = "English (US)",

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T1 - The advanced unified defect model and its applications

AU - Spicer, W. E.

AU - Kendelewicz, T.

AU - Newman, N.

AU - Cao, R.

AU - McCants, C.

AU - Miyano, K.

AU - Lindau, I.

AU - Liliental-Weber, Z.

AU - Weber, E. R.

PY - 1988/9

Y1 - 1988/9

N2 - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

AB - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

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