TY - JOUR
T1 - The advanced unified defect model and its applications
AU - Spicer, W. E.
AU - Kendelewicz, T.
AU - Newman, N.
AU - Cao, R.
AU - McCants, C.
AU - Miyano, K.
AU - Lindau, I.
AU - Liliental-Weber, Z.
AU - Weber, E. R.
N1 - Funding Information:
This work was supported by the Defense Advanced Research Projects Agency, the Office of Naval Research, and the Air Force Office of Scientific Research.
PY - 1988/9
Y1 - 1988/9
N2 - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.
AB - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.
UR - http://www.scopus.com/inward/record.url?scp=0024068551&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024068551&partnerID=8YFLogxK
U2 - 10.1016/0169-4332(88)90411-4
DO - 10.1016/0169-4332(88)90411-4
M3 - Article
AN - SCOPUS:0024068551
SN - 0169-4332
VL - 33-34
SP - 1009
EP - 1029
JO - Applied Surface Science
JF - Applied Surface Science
IS - C
ER -