The advanced unified defect model and its applications

W. E. Spicer, T. Kendelewicz, Nathan Newman, R. Cao, C. McCants, K. Miyano, I. Lindau, Z. Liliental-Weber, E. R. Weber

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

Original languageEnglish (US)
Pages (from-to)1009-1029
Number of pages21
JournalApplied Surface Science
Volume33-34
Issue numberC
DOIs
StatePublished - 1988
Externally publishedYes

Fingerprint

Defects
defects
Fermi level
Electron energy levels
energy levels
Annealing
Semiconductor materials
Metals
annealing
Surface chemistry
Molecular beam epitaxy
metals
insulators
chemistry
gallium arsenide
Temperature

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Spicer, W. E., Kendelewicz, T., Newman, N., Cao, R., McCants, C., Miyano, K., ... Weber, E. R. (1988). The advanced unified defect model and its applications. Applied Surface Science, 33-34(C), 1009-1029. https://doi.org/10.1016/0169-4332(88)90411-4

The advanced unified defect model and its applications. / Spicer, W. E.; Kendelewicz, T.; Newman, Nathan; Cao, R.; McCants, C.; Miyano, K.; Lindau, I.; Liliental-Weber, Z.; Weber, E. R.

In: Applied Surface Science, Vol. 33-34, No. C, 1988, p. 1009-1029.

Research output: Contribution to journalArticle

Spicer, WE, Kendelewicz, T, Newman, N, Cao, R, McCants, C, Miyano, K, Lindau, I, Liliental-Weber, Z & Weber, ER 1988, 'The advanced unified defect model and its applications', Applied Surface Science, vol. 33-34, no. C, pp. 1009-1029. https://doi.org/10.1016/0169-4332(88)90411-4
Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K et al. The advanced unified defect model and its applications. Applied Surface Science. 1988;33-34(C):1009-1029. https://doi.org/10.1016/0169-4332(88)90411-4
Spicer, W. E. ; Kendelewicz, T. ; Newman, Nathan ; Cao, R. ; McCants, C. ; Miyano, K. ; Lindau, I. ; Liliental-Weber, Z. ; Weber, E. R. / The advanced unified defect model and its applications. In: Applied Surface Science. 1988 ; Vol. 33-34, No. C. pp. 1009-1029.
@article{59a5463683dc4c4b90b661d340ebde46,
title = "The advanced unified defect model and its applications",
abstract = "The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.",
author = "Spicer, {W. E.} and T. Kendelewicz and Nathan Newman and R. Cao and C. McCants and K. Miyano and I. Lindau and Z. Liliental-Weber and Weber, {E. R.}",
year = "1988",
doi = "10.1016/0169-4332(88)90411-4",
language = "English (US)",
volume = "33-34",
pages = "1009--1029",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "C",

}

TY - JOUR

T1 - The advanced unified defect model and its applications

AU - Spicer, W. E.

AU - Kendelewicz, T.

AU - Newman, Nathan

AU - Cao, R.

AU - McCants, C.

AU - Miyano, K.

AU - Lindau, I.

AU - Liliental-Weber, Z.

AU - Weber, E. R.

PY - 1988

Y1 - 1988

N2 - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

AB - The advanced unified defect model (AUDM) is presented for GaAs interfaces with metals, other semiconductors, and insulators. The key defect is the AsGa anstisite, which is also responsible for EL-2 and semi-insulating GaAs. The energy levels of the AsGa antisite (0.75 and 0.52 eV) correspond well with the previously identified energy levels (0.75 and 0.5 eV) of the unified defect model (UDM). Using the AUDM, it is shown that a wide range of experimental data can now be explained. The Fermi level position on GaAs(001) MBE surfaces and its dependency on As or Ga are explained. The changes in Schottky barrier height of LaB6/GaAs, Al/GaAs, and Au/GaAS on annealing are explained in terms of AsGa antisite density near the interface being increased or decreased due to the annealing. For Al and Au this is correlated with the metal/semiconductor interfacial chemistry, and a predictive capability is developed in terms of net increase or decrease of As at the interface due to this reaction. The Fermi level pinning behavior at low temperature is also explained in terms of this model.

UR - http://www.scopus.com/inward/record.url?scp=0024068551&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024068551&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(88)90411-4

DO - 10.1016/0169-4332(88)90411-4

M3 - Article

VL - 33-34

SP - 1009

EP - 1029

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - C

ER -