Remote plasma enhanced chemical vapor deposition SiO₂ in silicon based nanostructures

Engineering & Materials Science

• Plasma enhanced chemical vapor deposition 100%
• Nanostructures 86%
• Oxides 60%
• Silicon 55%
• Surface roughness 23%
• Plasmas 12%
• Vapors 12%
• Inversion layers 12%
• Silicon oxides 10%
• Gates (transistor) 10%
• MOSFET devices 8%
• Leakage currents 7%
• Nucleation 7%
• Silica 7%
• Electrons 7%
• Hot Temperature 6%
• Oxidation 6%
• Temperature 5%
• Defects 4%
• Gases 4%

Physics & Astronomy

• vapor deposition 54%
• oxides 43%
• silicon 37%
• depletion 12%
• surface roughness 11%
• roughness 11%
• vapors 10%
• silicon oxides 7%
• metal oxide semiconductors 7%
• coverings 6%
• leakage 5%
• inversions 5%
• vapor phases 5%
• field effect transistors 5%
• silicon dioxide 5%
• nucleation 5%
• oxidation 5%
• defects 3%
• electrons 2%