Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Engineering & Materials Science

• Electron emission 80%
• Semiconductor quantum wells 75%
• Conduction bands 54%
• Ballistics 52%
• Microscopic examination 52%
• Ultrahigh vacuum 25%
• Interface states 24%
• Stacking faults 22%
• Diodes 14%
• Semiconductor materials 14%
• Metals 10%
• Temperature 6%

Physics & Astronomy

• electron emission 47%
• ballistics 47%
• inclusions 37%
• quantum wells 37%
• microscopy 33%
• conduction bands 27%
• ultrahigh vacuum 16%
• crystal defects 15%
• diodes 12%
• metals 8%

Chemical Compounds

• Ballistic Electron Emission Microscopy 100%
• Conduction Band 51%
• Interface State 37%
• Vacuum 19%
• Semiconductor 18%
• Metal 10%