Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy

Y. Ding, K. B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, Brian Skromme, H. Meidia, S. Mahajan

Research output: Contribution to journalArticle

33 Scopus citations

Abstract

High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number4
DOIs
StatePublished - Jan 22 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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