High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 22 2004|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics