Quantum transport calculations for silicon inversion layers in MOS structures

Engineering & Materials Science

• Autocorrelation 20%
• Charge density 53%
• Electrons 19%
• Green's function 22%
• Inversion layers 100%
• Scattering 17%
• Silicon 45%
• Surface roughness 47%
• Temperature 15%

Chemical Compounds

• Ambient Reaction Temperature 10%
• Autocorrelation Function 27%
• Charge Density 36%
• Compound Mobility 43%
• Electron Particle 10%
• Interface Roughness 33%
• Quantum Transport 95%
• Simulation 12%
• Surface Roughness 38%
• Tight Binding Model 25%

Physics & Astronomy

• autocorrelation 18%
• coefficients 10%
• depletion 16%
• electrons 8%
• field effect transistors 14%
• formalism 13%
• Green's functions 15%
• inversions 46%
• matrices 10%
• room temperature 10%
• roughness 15%
• scattering 9%
• silicon 30%
• simulation 7%
• surface roughness 32%
• temperature 5%
• time functions 24%