Abstract

We evaluate the mobility of inversion layer electrons in silicon MOSFETs using a real-time Green's functions formalism. Simulation results suggest that interface-roughness considerably affects the low-field mobility, even at room temperature. We also find that an exponential model for the surface-roughness autocorrelation function, as well as Ando's model for the surface-roughness matrix element, leads to the best description of this scattering process over a wide range of inversion charge densities and temperatures. Universal mobility behavior is observed when the proper weighting coefficient for the depletion charge density is used in the definition of the effective field.

Original languageEnglish (US)
Pages (from-to)333-335
Number of pages3
JournalPhysica B: Condensed Matter
Volume227
Issue number1-4
StatePublished - Sep 1996

Fingerprint

Inversion layers
Silicon
Surface roughness
inversions
Charge density
surface roughness
silicon
time functions
Autocorrelation
Green's function
autocorrelation
depletion
roughness
Green's functions
field effect transistors
Scattering
formalism
Temperature
Electrons
room temperature

Keywords

  • Green's functions
  • Inversion layers
  • Mobility
  • Surface-roughness
  • Universality

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Quantum transport calculations for silicon inversion layers in MOS structures. / Vasileska, Dragica; Bordone, P.; Eldridge, T.; Ferry, D. K.

In: Physica B: Condensed Matter, Vol. 227, No. 1-4, 09.1996, p. 333-335.

Research output: Contribution to journalArticle

Vasileska, D, Bordone, P, Eldridge, T & Ferry, DK 1996, 'Quantum transport calculations for silicon inversion layers in MOS structures', Physica B: Condensed Matter, vol. 227, no. 1-4, pp. 333-335.
Vasileska, Dragica ; Bordone, P. ; Eldridge, T. ; Ferry, D. K. / Quantum transport calculations for silicon inversion layers in MOS structures. In: Physica B: Condensed Matter. 1996 ; Vol. 227, No. 1-4. pp. 333-335.
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