PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.

S. R. Wilson, W. M. Paulson, R. B. Gregory, Stephen Krause, J. D. Gressett, F. D. McDaniel, R. G. Downing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.

Original languageEnglish (US)
Title of host publicationElectrochemical Society Extended Abstracts
PublisherElectrochemical Soc
Pages732-733
Number of pages2
Volume84-2
StatePublished - 1984
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Wilson, S. R., Paulson, W. M., Gregory, R. B., Krause, S., Gressett, J. D., McDaniel, F. D., & Downing, R. G. (1984). PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING. In Electrochemical Society Extended Abstracts (Vol. 84-2, pp. 732-733). Electrochemical Soc.