Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.
|Original language||English (US)|
|Title of host publication||Electrochemical Society Extended Abstracts|
|Number of pages||2|
|State||Published - 1984|
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