PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.

S. R. Wilson; W. M. Paulson; R. B. Gregory; Stephen Krause; J. D. Gressett; F. D. McDaniel; R. G. Downing

PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.

S. R. Wilson, W. M. Paulson, R. B. Gregory, Stephen Krause, J. D. Gressett, F. D. McDaniel, R. G. Downing

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.

Original language	English (US)
Title of host publication	Electrochemical Society Extended Abstracts
Publisher	Electrochemical Soc
Pages	732-733
Number of pages	2
Volume	84-2
State	Published - 1984
Externally published	Yes

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{4b44ca767a27481a8e9002e4a9d6b374,

title = "PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.",

abstract = "Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.",

author = "Wilson, {S. R.} and Paulson, {W. M.} and Gregory, {R. B.} and Stephen Krause and Gressett, {J. D.} and McDaniel, {F. D.} and Downing, {R. G.}",

year = "1984",

language = "English (US)",

volume = "84-2",

pages = "732--733",

booktitle = "Electrochemical Society Extended Abstracts",

publisher = "Electrochemical Soc",

}

TY - GEN

T1 - PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.

AU - Wilson, S. R.

AU - Paulson, W. M.

AU - Gregory, R. B.

AU - Krause, Stephen

AU - Gressett, J. D.

AU - McDaniel, F. D.

AU - Downing, R. G.

PY - 1984

Y1 - 1984

N2 - Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.

AB - Polysilicon films have been implanted with As, B and BF//2 and subjected to a transient anneal with a Varian I 200 annealer. Arsenic is lost unless the films are capped. As and B diffuse rapidly throughout the film. The R//s decreases and mu p and grain size increase with increasing exposure time.

UR - http://www.scopus.com/inward/record.url?scp=0021621313&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021621313&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0021621313

VL - 84-2

SP - 732

EP - 733

BT - Electrochemical Society Extended Abstracts

PB - Electrochemical Soc

ER -

PROPERTIES OF ION IMPLANTED POLYSILICON LAYERS SUBJECTED TO RAPID THERMAL ANNEALING.

Abstract

ASJC Scopus subject areas

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