Pb(Zr,Ti)O ₃-GaN heterostructures for RF MEMS applications

Physics & Astronomy

• microelectromechanical systems 74%
• polarization 41%
• configurations 41%
• capacitance 40%
• magnetic force microscopy 31%
• sol-gel processes 30%
• stems 27%
• secondary ion mass spectrometry 26%
• depolarization 25%
• insertion 24%
• telecommunication 23%
• spatial distribution 22%
• poles 22%
• screening 22%
• sapphire 21%
• dielectric properties 21%
• hysteresis 19%
• ionization 17%
• electric fields 15%
• profiles 13%
• diffraction 13%
• x rays 11%
• energy 7%

Engineering & Materials Science

• Heterojunctions 100%
• Lead zirconate titanate 92%
• MEMS 71%
• Polarization 14%
• Ferroelectric materials 14%
• Ionization potential 9%
• Capacitance 9%
• Secondary ion mass spectrometry 8%
• Charge density 7%
• Depolarization 7%
• Sol-gel process 7%
• Sapphire 7%
• Dielectric properties 6%
• Hysteresis loops 6%
• Spatial distribution 6%
• X ray diffraction 5%
• Screening 5%
• Electric fields 5%
• Poles 4%
• Communication systems 4%
• Chemical analysis 3%

Chemical Compounds

• Polarization 57%
• Interdiffusion 39%
• Depolarization 28%
• Secondary Ion Mass Spectroscopy 27%
• Dielectric Property 25%
• Ionization Potential 25%
• Hysteresis 25%
• Charge Density 24%
• Application 24%
• Communication 23%
• Electric Field 22%
• Sol Gel Process 20%
• Donor 17%
• Length 15%
• X-Ray Diffraction 12%