Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications

Sandwip Dey, S. Bhaskar, M. H. Tsai, W. Cao

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

Ferroelectric (Pb(Zr 0.3Ti 0.7)O 3 or PZT(30/70))/GaN/Sapphire heterostructures were fabricated by the sol-gel process. The structure and composition of PZT, and its dielectric and ferroelectric properties in Pt/PZT/Ru or Pt/PZT/Pt, and Pt/PZT/GaN configurations were characterized to assess their feasibility as RF MEMS devices for eventual insertion in RF communication systems. The X-ray diffraction and pole figure analysis confirmed the stoichiometric, phase-pure PZT with (111) out-of-plane relationship on (0001) GaN. The secondary ion mass spectrometry (SIMS) depth profile indicated a stable interface with insignificant inter-diffusion of the Pb, Zr, or Ti elements into the GaN. The properties of PZT in Pt/PZT/Ru/GaN or MFM configuration were high capacitance density (C/A = 1.25 μF/cm 2) and polarization (30 μC/cm 2). In contrast, PZT in Pt/PZT/GaN or MFS configuration exhibited lower capacitance density (C/A = 0.35 μF/cm 2) and asymmetrical hysteresis loops (polarization ∼4 μC/cm 2). From the calculated spatial distribution of the electric field, E(x), and potential, V(x), which stem from all the charge densities within the entire MFS system, one may eventually design and fabricate PZT/GaN heterostructures in terms of controllable parameters (e.g., PZT phase and orientation, donor and acceptor ionization energies, and thickness and screening lengths of PZT and GaN), such that the depolarization field (E depol) is minimized and the polarization is maximized in PZT.

Original languageEnglish (US)
Title of host publicationIntegrated Ferroelectrics
Pages69-78
Number of pages10
Volume62
DOIs
StatePublished - 2004

Fingerprint

microelectromechanical systems
MEMS
Heterojunctions
Polarization
Ferroelectric materials
Capacitance
polarization
configurations
capacitance
Ionization potential
Aluminum Oxide
magnetic force microscopy
Depolarization
sol-gel processes
Hysteresis loops
Secondary ion mass spectrometry
Charge density
stems
Sapphire
depolarization

Keywords

  • Compensation charge
  • Depolarization field
  • GaN
  • Pb(Zr,Ti)O
  • Sol-gel

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Dey, S., Bhaskar, S., Tsai, M. H., & Cao, W. (2004). Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications In Integrated Ferroelectrics (Vol. 62, pp. 69-78) https://doi.org/10.1080/10584580490460402

Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications . / Dey, Sandwip; Bhaskar, S.; Tsai, M. H.; Cao, W.

Integrated Ferroelectrics. Vol. 62 2004. p. 69-78.

Research output: Chapter in Book/Report/Conference proceedingChapter

Dey, S, Bhaskar, S, Tsai, MH & Cao, W 2004, Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications in Integrated Ferroelectrics. vol. 62, pp. 69-78. https://doi.org/10.1080/10584580490460402
Dey S, Bhaskar S, Tsai MH, Cao W. Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications In Integrated Ferroelectrics. Vol. 62. 2004. p. 69-78 https://doi.org/10.1080/10584580490460402
Dey, Sandwip ; Bhaskar, S. ; Tsai, M. H. ; Cao, W. / Pb(Zr,Ti)O 3-GaN heterostructures for RF MEMS applications Integrated Ferroelectrics. Vol. 62 2004. pp. 69-78
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AB - Ferroelectric (Pb(Zr 0.3Ti 0.7)O 3 or PZT(30/70))/GaN/Sapphire heterostructures were fabricated by the sol-gel process. The structure and composition of PZT, and its dielectric and ferroelectric properties in Pt/PZT/Ru or Pt/PZT/Pt, and Pt/PZT/GaN configurations were characterized to assess their feasibility as RF MEMS devices for eventual insertion in RF communication systems. The X-ray diffraction and pole figure analysis confirmed the stoichiometric, phase-pure PZT with (111) out-of-plane relationship on (0001) GaN. The secondary ion mass spectrometry (SIMS) depth profile indicated a stable interface with insignificant inter-diffusion of the Pb, Zr, or Ti elements into the GaN. The properties of PZT in Pt/PZT/Ru/GaN or MFM configuration were high capacitance density (C/A = 1.25 μF/cm 2) and polarization (30 μC/cm 2). In contrast, PZT in Pt/PZT/GaN or MFS configuration exhibited lower capacitance density (C/A = 0.35 μF/cm 2) and asymmetrical hysteresis loops (polarization ∼4 μC/cm 2). From the calculated spatial distribution of the electric field, E(x), and potential, V(x), which stem from all the charge densities within the entire MFS system, one may eventually design and fabricate PZT/GaN heterostructures in terms of controllable parameters (e.g., PZT phase and orientation, donor and acceptor ionization energies, and thickness and screening lengths of PZT and GaN), such that the depolarization field (E depol) is minimized and the polarization is maximized in PZT.

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