Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

G. Grzybowski, R. T. Beeler, L. Jiang, David Smith, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticlepeer-review

97 Scopus citations

Fingerprint

Dive into the research topics of 'Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission'. Together they form a unique fingerprint.

Physics & Astronomy