Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4: Reaction kinetics and tunable emission

G. Grzybowski, R. T. Beeler, L. Jiang, David Smith, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

Film growth and reaction kinetics studies have shown that trigermane (Ge 3H 8) is a superior Ge source for the epitaxial synthesis of Ge 1-ySn y/Si(100) alloys using ultra-high vacuum chemical vapor deposition. The Ge 3H 8/SnD 4 combination yields 3-4 times higher growth rates than the traditional Ge 2H 6/SnD 4 approach, with film Sn/Ge ratios reflecting the corresponding gas-phase stoichiometries much more closely. These advances have led to optical quality Ge 1-ySn y layers with Sn concentrations up to at least 9 and thicknesses approaching 1 μm. These thick films are found to be crucial for the observation of a strong, tunable photoluminescence signal near the threshold of the predicted direct-indirect bandgap crossover.

Original languageEnglish (US)
Article number072105
JournalApplied Physics Letters
Volume101
Issue number7
DOIs
StatePublished - Aug 13 2012

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reaction kinetics
ultrahigh vacuum
thick films
stoichiometry
crossovers
vapor deposition
vapor phases
photoluminescence
thresholds
kinetics
synthesis

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Next generation of Ge 1-ySn y (y = 0.01-0.09) alloys grown on Si(100) via Ge 3H 8 and SnD 4 : Reaction kinetics and tunable emission. / Grzybowski, G.; Beeler, R. T.; Jiang, L.; Smith, David; Kouvetakis, John; Menendez, Jose.

In: Applied Physics Letters, Vol. 101, No. 7, 072105, 13.08.2012.

Research output: Contribution to journalArticle

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