Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon

Richard Akis, David Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.

Original languageEnglish (US)
Pages (from-to)451-454
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 2006

Fingerprint

Germanium
Epitaxial Growth
Kinetic Monte Carlo
Surface Reconstruction
Surface reconstruction
Silicon
Epitaxial growth
Anisotropy
germanium
Monte Carlo Simulation
Kinetics
Substrate
SiGe
Growth Process
kinetics
silicon
Substrates
Crystal lattices
Ion exchange
anisotropy

Keywords

  • Germanium
  • Kinetic Lattice Monte Carlo
  • Silicon
  • Strain
  • Surfacediffusion

ASJC Scopus subject areas

  • Computational Theory and Mathematics
  • Electrical and Electronic Engineering

Cite this

Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon. / Akis, Richard; Ferry, David.

In: Journal of Computational Electronics, Vol. 5, No. 4, 12.2006, p. 451-454.

Research output: Contribution to journalArticle

Akis, Richard ; Ferry, David. / Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon. In: Journal of Computational Electronics. 2006 ; Vol. 5, No. 4. pp. 451-454.
@article{34bd980951d54dc88e7ef89a33f94c24,
title = "Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon",
abstract = "We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.",
keywords = "Germanium, Kinetic Lattice Monte Carlo, Silicon, Strain, Surfacediffusion",
author = "Richard Akis and David Ferry",
year = "2006",
month = "12",
doi = "10.1007/s10825-006-0042-5",
language = "English (US)",
volume = "5",
pages = "451--454",
journal = "Journal of Computational Electronics",
issn = "1569-8025",
publisher = "Springer Netherlands",
number = "4",

}

TY - JOUR

T1 - Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon

AU - Akis, Richard

AU - Ferry, David

PY - 2006/12

Y1 - 2006/12

N2 - We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.

AB - We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.

KW - Germanium

KW - Kinetic Lattice Monte Carlo

KW - Silicon

KW - Strain

KW - Surfacediffusion

UR - http://www.scopus.com/inward/record.url?scp=34248632801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248632801&partnerID=8YFLogxK

U2 - 10.1007/s10825-006-0042-5

DO - 10.1007/s10825-006-0042-5

M3 - Article

AN - SCOPUS:34248632801

VL - 5

SP - 451

EP - 454

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

SN - 1569-8025

IS - 4

ER -