Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon

Richard Akis, David Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We present Kinetic Lattice Monte Carlo (KLMC) simulations of Ge deposition onto a reconstructed Si (100) surface. In addition to the anisotropy brought on by surface reconstruction, we take into account the role of the exchange of Ge with Si atoms in the substrate and how it effects the interface between the materials. One method of controlling the resulting structures from the growth process is to use a pre-patterned substrate. We present results where the initial structure is a grid pattern. The KLMC simulations in this case yield Ge-Si stripes, that result largely from the anisotropy generated from the surface reconstruction.

Original languageEnglish (US)
Pages (from-to)451-454
Number of pages4
JournalJournal of Computational Electronics
Volume5
Issue number4
DOIs
StatePublished - Dec 1 2006

Keywords

  • Germanium
  • Kinetic Lattice Monte Carlo
  • Silicon
  • Strain
  • Surfacediffusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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