Investigation on diffusion barrier properties of reactive sputter deposited TiAlxNyOz thin films for Cu metallization

H. C. Kim, Terry Alford

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO 2 substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO 2/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl xNyOz thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl xNyOz films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyO z can be used in the application of high temperature electronics due to its excellent high temperature properties.

Original languageEnglish (US)
Pages (from-to)6-11
Number of pages6
JournalThin Solid Films
Volume449
Issue number1-2
DOIs
StatePublished - Feb 2 2004

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Keywords

  • Cu metallization
  • Diffusion barrier
  • Reactive sputtering
  • TiAlNO thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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