Abstract
Barrier properties of TiAlxNyOz films between electron-beam evaporated Cu thin films and thermally grown SiO 2 substrates are investigated by Rutherford backscattering spectrometry, X-ray diffractometry (XRD), electrical resistivity measurement and adhesion tests. The Cu/TiAlxNyOz/SiO 2/Si samples are analyzed prior to and after vacuum anneals up to 800 °C for 1 h. Backscattering analysis indicates that the TiAl xNyOz thin films are formed by reactive sputtering technique using the TiAl alloy target, nitrogen flow and high substrate temperature (400 °C). Furthermore, Cu diffusion through TiAl xNyOz films does not occur even at high temperature (800 °C). XRD and electrical resistivity measurements show good thermal stability of Cu thin films annealed in vacuum at temperatures varying from 400 to 800 °C for 1 h. In addition, it is revealed by tape test that Cu thin films adhere to TiAlxNyOz films very well. Results show that Cu thin film on TiAlxNyO z can be used in the application of high temperature electronics due to its excellent high temperature properties.
Original language | English (US) |
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Pages (from-to) | 6-11 |
Number of pages | 6 |
Journal | Thin Solid Films |
Volume | 449 |
Issue number | 1-2 |
DOIs | |
State | Published - Feb 2 2004 |
Keywords
- Cu metallization
- Diffusion barrier
- Reactive sputtering
- TiAlNO thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry