Investigation on diffusion barrier properties of reactive sputter deposited TiAl_xN_yO_z thin films for Cu metallization

Engineering & Materials Science

• Diffusion barriers 100%
• Metallizing 78%
• Thin films 64%
• X ray diffraction analysis 34%
• Rutherford backscattering spectroscopy 25%
• Vacuum 23%
• Temperature 21%
• Reactive sputtering 21%
• High temperature properties 19%
• Substrates 19%
• Spectrometry 17%
• Electron beams 16%
• Thermodynamic stability 14%
• Tapes 13%
• Nitrogen 12%
• Adhesion 12%
• Electronic equipment 11%

Chemical Compounds

• Diffusion Barrier 85%
• X-Ray Diffractometry 28%
• Vacuum 21%
• Reactive Sputtering 20%
• Liquid Film 19%
• Backscattering 19%
• Rutherford Backscattering Spectroscopy 17%
• Electron Beam 14%
• Alloy 9%
• Thermal Stability 8%
• Flow 8%
• Diffusion 8%
• Nitrogen 8%
• Application 4%

Physics & Astronomy

• thin films 34%
• backscattering 24%
• adhesion tests 19%
• electrical resistivity 17%
• vacuum 17%
• x ray spectroscopy 13%
• tapes 13%
• thermal stability 11%
• sputtering 10%
• nitrogen 9%
• electron beams 9%
• temperature 8%
• electronics 7%
• x rays 6%