Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer

Engineering & Materials Science

• Zinc Selenide 100%
• Molecular beam epitaxy 86%
• Buffer layers 79%
• Surface treatment 58%
• Epilayers 31%
• Fluxes 30%
• Photoluminescence 30%
• Hydrogen 29%
• Auger electron spectroscopy 28%
• Epitaxial growth 26%
• Atomic force microscopy 23%
• X ray diffraction 18%
• Cleaning 17%
• Semiconductor materials 16%
• Substrates 13%
• Hot Temperature 8%
• Temperature 7%

Physics & Astronomy

• surface treatment 58%
• molecular beam epitaxy 47%
• buffers 46%
• hydrogen 17%
• Auger spectroscopy 13%
• cleaning 13%
• epitaxy 13%
• electron spectroscopy 13%
• atomic force microscopy 10%
• photoluminescence 9%
• diffraction 7%
• x rays 6%

Chemical Compounds

• Molecular Beam Epitaxy 79%
• Buffer Solution 36%
• Surface 17%
• Epitaxial Growth 13%
• Auger Electron Spectroscopy 12%
• Hydrogen 11%
• Atomic Force Microscopy 8%
• Photoluminescence 8%
• Semiconductor 8%
• X-Ray Diffraction 5%