TY - JOUR
T1 - Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer
AU - Zhang, Chaomin
AU - Alberi, Kirstin
AU - Honsberg, Christiana
AU - Park, Kwangwook
N1 - Publisher Copyright:
© 2021 Elsevier B.V.
PY - 2021/5/30
Y1 - 2021/5/30
N2 - Atomically clean and smooth surfaces are critical prerequisites for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated via in-situ Auger electron spectroscopy. The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction, photoluminescence and atomic force microscopy to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300 °C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.
AB - Atomically clean and smooth surfaces are critical prerequisites for the epitaxial regrowth of dissimilar semiconductors. Using ZnSe/GaAs as a model system, epitaxial regrowth without a buffer layer after thermal cleaning with various As-fluxes, atomic Ga flux, and atomic hydrogen treatments to the GaAs substrates and the surfaces were investigated via in-situ Auger electron spectroscopy. The ZnSe epilayers grown on the pre-treated GaAs surfaces without a buffer layer were characterized by X-ray diffraction, photoluminescence and atomic force microscopy to evaluate the effectiveness of the surface treatment methods. It was found that a high quality ZnSe layer can be achieved by atomic hydrogen surface treatment at 300 °C without requiring GaAs buffer layer growth, which reveals a path for epitaxy growth avoiding high temperature treatments.
KW - Epitaxial regrowth
KW - II-VI semiconductors
KW - III-V semiconductors
KW - MBE
UR - http://www.scopus.com/inward/record.url?scp=85101423573&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85101423573&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2021.149245
DO - 10.1016/j.apsusc.2021.149245
M3 - Article
AN - SCOPUS:85101423573
SN - 0169-4332
VL - 549
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 149245
ER -